• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2005년도 춘계학술대회논문집
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• pp.840-845
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• 2005

This paper presents a robust optimal design method for a periodic structure type of MEMS resonator that is vulnerable to mode localization. The robust configuration of such a MEMS resonator to fabrication error is implemented by changing the regularity of periodic structure. For the mathematical convenience, the MEMS resonator is first modeled as a multi pendulum system. The index representing the measure of mode variation is then introduced using the perturbation method and the concept of modal assurance criterion. Finally, the optimal intentional mistuning, minimizing the expectation of the irregularity measure for each substructure, is determined for the normal distributed fabrication error and its robustness in the design of MEMS resonator to the fabrication error is demonstrated with numerical examples.

• 한국소음진동공학회논문집
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• 제15권8호
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• pp.931-938
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• 2005

This paper presents a robust optimal design method for a periodic structure type of MEMS resonator that is vulnerable to mode localization. The robust configuration of such a MEMS resonator to fabrication error is implemented by changing the regularity of periodic structure For the mathematical convenience, the MEMS resonator is first modeled as a multi-pendulum system. The index representing the measure of mode variation is then introduced using the perturbation method and the concept of modal assurance criterion. Finally, the optimal intentional mistuning, minimizing the expectation of the irregularity measure for each substructure, is determined for the normal distributed fabrication error and its robustness in the design of MEMS resonator to the fabrication error is demonstrated with numerical examples.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.467-472
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• 2007

A modern MEMS resonator is a micro-scale structure operated over a high frequency range. In order to predict its resonant behavior in a design process, High-frequency response analysis (Hi-FRA) is demanded. Algebraic substructuring (AS) is known as a fast numerical technique to construct an eigenspace for FR and frequency sweep (FS) algorithm efficiently solves the frequency response system projected on the eigenspace. However, the existing FS algorithm using AS is developed for low-FRA, say over the range 1Hz-2KHz. In this work, we extend the FS algorithm using AS for FRA over an arbitrary frequency range. Therefore, it can be efficiently applied to systems operated at a high frequency, say over the range 230MHz-250MHz. The success of the proposed method is demonstrated by Hi-FRA of a checkerboard resonator.

• 센서학회지
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• 제29권5호
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• pp.354-359
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• 2020

The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10^-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

• 센서학회지
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• 제19권3호
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• pp.191-196
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• 2010

In this paper, modeling of the non-ideal frequency response, especially "notch-and-spike" magnitude phenomenon and phase lag distortion, are discussed. To characterize the non-ideal frequency response, a new electro-mechanical simulation model based on SPICE is proposed using the driving loop of the capacitive vibratory gyroscope. The parasitic components of the driving loop are found to be the major factors of non-ideal frequency response, and it is verified with the measurement results.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.623-626
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• 2005

In this paper, we proposed a new type SIR bandpass filter using DAML. This filter is consisted of 2 layers with MEMS resonator layer and CPW feed line. DAML ring resonator is elevated with $10\;{\mu}m$ height from GaAs substrate. Using MEMS processing, we are able to realize SIR bandpass filter easily. Furthermore it is useful to integrate on conventional MMICs because it has CPW interfaces and ring resonator is isolated from substrate by air-gap. We optimized and measured the results that $S_{21}$ attenuation at rejected band is over 15 dB, insertion loss is inside the limit of 3 dB, and relative bandwidth is about 10 % at 60 GHz

• ETRI Journal
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• 제31권4호
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• pp.478-480
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• 2009

The design of a CMOS clamped-clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 ${\mu}m$ CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a $48{\times}10^8$ resonant frequency-quality factor product ($Q{\times}f_{res}$) in air conditions, which is quite competitive in comparison with existing CMOS-MEMS resonators.

• 한국자기학회지
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• 제17권3호
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• pp.141-146
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• 2007

MEMS 공정기법을 적용하여 새로운 형태의 LC 공진기형 자기센서를 제작하였다. 이 마이크로 LC 공진기는 솔레노이드형 마이크로인덕터에 연자성 마이크로와이어를 코어로 삽입하고 여기에 콘덴서를 병렬로 연결하여 구성하였다. 코어 자성 물질은 melt spinning 법으로 제조한 유리가 코팅된 $Co_{83.2}B_{3.3}Si_{5.9}Mn_{7.6}$ 마이크로와이어이다. 코어물질의 연자성을 개선하기 위하여 $150^{\circ}C$, $200^{\circ}C,\;250^{\circ}C,\;300^{\circ}C$ 등 여러 온도에서 1시간씩 진공 열처리하였다. MEMS 공정으로 제작된 솔레노이형 마이크로인덕터는 길이가 $500{\sim}1,000{\mu}m$ 이며 감은수는 $10{\sim}20$회이다. 외부자기장에 따른 본 마이크로인덕터의 최대 인덕턴스 변화율은 370%이었다. 초연자성 마이크로와이어의 투자율이 외부자기장에 따라 급격히 변하기 때문에 인덕턴스변화율이나 LC 공진기의 자기임피던스 변화율(MIR)이 급속하게 변한다. 최대감도를 얻기 위해서 MIR 곡선은 정교하게 조절할 수 있다. 마이크로인덕터와 멀티바이브 레어터 회로로 구성된 원형 자기센서소자를 제작하여 시험동작을 하는데 성공하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.874-877
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• 2001

SOI(Silicon-On-Insulator) technology is proposed as an alternative to bulk silicon for MEMS(Micro Electro Mechanical System) manufacturing. In this paper, we fabricated the SOI wafer with uniform active layer thickness by silicon direct bonding and mechanical polishing processes. Specially-designed electrostatic bonding system is introduced which is available for vacuum packaging and silicon-glass wafer bonding for SOG(Silicon On Glass) wafer. We demonstrated thermopile sensor and RF resonator using the SOI wafer, which has the merits of simple process and uniform membrane fabrication.

• 한국전자파학회논문지
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• 제16권7호
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• pp.760-767
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• 2005

본 논문에서 우리는 DAML(Dielectric Air-gapped supported Microstrip Line) 구조를 이용하여 새로운 구조의 SIR대역 통과 여파기를 설계 제작하였다. 제작된 SIR대역 통과 여파기는 MIM capacitor를 커플링 포트로써 사용함으로 DAML구조를 이용하여 쉽게 제작될 수 있다. 더욱이 이러한 구조는 CPW interfaces를 가지고 있고 DAML구조의 링 공진기는 기판으로부터 $10{\mu}m$높이로 분리되어 있기 때문에 일반적인 평면 구조의 MMICs와 집적하기 유리하다. 제작된 필터의 측정 결과, 60 GHz에서 $10\%$의 대역폭, 60.7 GHz에서 2.84 dB의 삽입 손실, 56 GHz에서 18.4 dB의 감쇠 특성, 60 GHz에서 23 dB의 반사 특성을 얻었다.