• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.05a
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• pp.840-845
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• 2005

This paper presents a robust optimal design method for a periodic structure type of MEMS resonator that is vulnerable to mode localization. The robust configuration of such a MEMS resonator to fabrication error is implemented by changing the regularity of periodic structure. For the mathematical convenience, the MEMS resonator is first modeled as a multi pendulum system. The index representing the measure of mode variation is then introduced using the perturbation method and the concept of modal assurance criterion. Finally, the optimal intentional mistuning, minimizing the expectation of the irregularity measure for each substructure, is determined for the normal distributed fabrication error and its robustness in the design of MEMS resonator to the fabrication error is demonstrated with numerical examples.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.15 no.8 s.101
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• pp.931-938
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• 2005

This paper presents a robust optimal design method for a periodic structure type of MEMS resonator that is vulnerable to mode localization. The robust configuration of such a MEMS resonator to fabrication error is implemented by changing the regularity of periodic structure For the mathematical convenience, the MEMS resonator is first modeled as a multi-pendulum system. The index representing the measure of mode variation is then introduced using the perturbation method and the concept of modal assurance criterion. Finally, the optimal intentional mistuning, minimizing the expectation of the irregularity measure for each substructure, is determined for the normal distributed fabrication error and its robustness in the design of MEMS resonator to the fabrication error is demonstrated with numerical examples.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.467-472
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• 2007

A modern MEMS resonator is a micro-scale structure operated over a high frequency range. In order to predict its resonant behavior in a design process, High-frequency response analysis (Hi-FRA) is demanded. Algebraic substructuring (AS) is known as a fast numerical technique to construct an eigenspace for FR and frequency sweep (FS) algorithm efficiently solves the frequency response system projected on the eigenspace. However, the existing FS algorithm using AS is developed for low-FRA, say over the range 1Hz-2KHz. In this work, we extend the FS algorithm using AS for FRA over an arbitrary frequency range. Therefore, it can be efficiently applied to systems operated at a high frequency, say over the range 230MHz-250MHz. The success of the proposed method is demonstrated by Hi-FRA of a checkerboard resonator.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.354-359
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• 2020

The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10^-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

• Journal of Sensor Science and Technology
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• v.19 no.3
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• pp.191-196
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• 2010

In this paper, modeling of the non-ideal frequency response, especially "notch-and-spike" magnitude phenomenon and phase lag distortion, are discussed. To characterize the non-ideal frequency response, a new electro-mechanical simulation model based on SPICE is proposed using the driving loop of the capacitive vibratory gyroscope. The parasitic components of the driving loop are found to be the major factors of non-ideal frequency response, and it is verified with the measurement results.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.623-626
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• 2005

In this paper, we proposed a new type SIR bandpass filter using DAML. This filter is consisted of 2 layers with MEMS resonator layer and CPW feed line. DAML ring resonator is elevated with $10\;{\mu}m$ height from GaAs substrate. Using MEMS processing, we are able to realize SIR bandpass filter easily. Furthermore it is useful to integrate on conventional MMICs because it has CPW interfaces and ring resonator is isolated from substrate by air-gap. We optimized and measured the results that $S_{21}$ attenuation at rejected band is over 15 dB, insertion loss is inside the limit of 3 dB, and relative bandwidth is about 10 % at 60 GHz

• ETRI Journal
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• v.31 no.4
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• pp.478-480
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• 2009

The design of a CMOS clamped-clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 ${\mu}m$ CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a $48{\times}10^8$ resonant frequency-quality factor product ($Q{\times}f_{res}$) in air conditions, which is quite competitive in comparison with existing CMOS-MEMS resonators.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.141-146
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• 2007

A new class of LC-resonator for micro magnetic sensor device was invented and fabricated by means of MEMS technique. The micro LC-resonator consists of a solenoidal micro-inductor with a bundle of soft magnetic microwire cores and a capacitor connected in parallel to the micro-inductor. The core magnetic material is a tiny glass coated $Co_{83.2}B_{3.3}Si_{5.9}Mn_{7.6}$ microwire fabricated by a glasscoated melt spinning technique. The core materials were annealed at various temperatures $150^{\circ}C,\;200^{\circ}C\;,250^{\circ}C\;,$ and $300^{\circ}C$ for 1 hour in a vacuum to improve soft magnetic properties. The solenoidal micro-inductors fabricated by MEMS technique were $500{\sim}1,000{\mu}m$ in length with $10{\sim}20$ turns. The changes of inductance as a function of external magnetic field in micro-inductors with properly annealed microwire cores were varied as much as 370%. Since the permeability of ultra soft magnetic microwire is changing rapidly as a function of external magnetic field. The inductance ratio as well as magnetoimpedance ratio (MIR) in a LC-resonator was varied drastically as a function of external magnetic field. The MIR curves can be tuned very precisely to obtain maximum sensitivity. A prototype magnetic sensor device consisting of the developed microinductors with a multivibrator circuit was test successfully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.874-877
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• 2001

SOI(Silicon-On-Insulator) technology is proposed as an alternative to bulk silicon for MEMS(Micro Electro Mechanical System) manufacturing. In this paper, we fabricated the SOI wafer with uniform active layer thickness by silicon direct bonding and mechanical polishing processes. Specially-designed electrostatic bonding system is introduced which is available for vacuum packaging and silicon-glass wafer bonding for SOG(Silicon On Glass) wafer. We demonstrated thermopile sensor and RF resonator using the SOI wafer, which has the merits of simple process and uniform membrane fabrication.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.7 s.98
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• pp.760-767
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• 2005

In this paper, we proposed a new type SIR bandpass filter using DAMLs. This filter is consisted of 2 layers with MEMS resonator layer and CPW feed line. DAMLs ring resonator is elevated with $10{\mu}m$ height from GaAs substrate. Using MEMS processing, we are able to realize SIR bandpass filter easily. Furthermore it is useful to integrate on conventional MMICs because it has CPW interfaces and ring resonator is isolated from substrate by air-gap. We optimized and measured the results that $S_{21}$ attenuation at rejected band is over 15 dB, insertion loss is inside the limit of 3 dB, and relative bandwidth is about $10\%$ at 60 GHz.