• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.16 no.12 s.117
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• pp.1272-1278
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• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• Journal of the Korean Society of Propulsion Engineers
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• v.19 no.1
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• pp.1-8
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• 2015

Micro igniter on the glass membrane for MEMS thruster was developed. The stability of the micro igniter by using a glass membrane with a thickness of tens of microns was improved. The micro igniter was fabricated by anisotropic wet etching of photosensitive glass and deposition of Pt/Ti for electric heat coil. The solid propellant was loaded into the propellant chamber without an especial technique due to the high structural stability of the glass membrane. Ignition tests were performed successfully. The minimum ignition delay was 27.5 ms with an ignition energy of 19.3 mJ.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.573-574
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• 2006

The planarization technology of Chemical-mechanical polishing(CMP), used for the manufacturing of multi-layer various material interconnects for Large-scale Integrated Circuits (LSI), is also readily adaptable as an enabling technology in MicroElectroMechanical System (MEMS) fabrication, particularly polysilicon surface micromachining. However, general LSI device CMP has partly distinction aspects, the pattern scale and material sorts in comparison with MEMS CMP. This study performed preliminary CMP tests to identify slurry characteristic used in general IC device. The experiment result is possible to verify slurry characteristic in MEMS structure material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.216-216
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• 2009

This paper describes a novel processing technique for the fabrication of polymer-derived SiCN (silicone carbonitride) microstructures for extreme microelectromechanical system (MEMS) applications. A polydimethylsiloxane (PDMS) mold was formed on an SU-8 pattern using a standard UV photolithographic process. Next, the liquid precursor, polysilazane, was injected into the PDMS mold to fabricate free-standing SiCN microstructures. Finally, the solid polymer SiCN microstructure was cross-linked using hot isostatic pressure at $400^{\circ}C$ and 205 bar. The optimal pyrolysis and annealing conditions to form a ceramic microstructure capable of withstanding temperatures over $1400^{\circ}C$ were determined. Using the optimal process conditions, the fabricated SiCN ceramic microstructure possessed excellent characteristics includingshear strength (15.2 N), insulation resistance ($2.163{\times}10^{14}\;{\Omega}$, and BDV (1.2 kV, minimum). Since the fabricated ceramic SiCN microstructure has improved electrical and physical characteristics compared to bulk Si wafers, it may be applied to harsh environments and high-power MEMS applications such as heat exchangers and combustion chambers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.27-30
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• 2012

This paper proposes a micro gas sensor for measuring $H_2S$ gas. This is based on a $SnO_2$-CuO multi-layer thin film. The sensor has a silicon diaphragm, micro heater, and sensing layers. The micro heater is embedded in the sensing layer in order to increase the temperature to an operating temperature. The $SnO_2$-CuO multi layer film is prepared by the alternating deposition method and thermal oxidation which uses an electron beam evaporator and a thermal furnace. To determine the effect of the number of layers, five sets of films are prepared, each with different number of layers. The sensitivities are measured by applying $H_2S$ gas. It has a concentration of 1 ppm at an operating temperature of $270^{\circ}C$. At the same total thickness, the sensitivity of the sensor with multi sensing layers was improved, compared to the sensor with one sensing layer. The sensitivity of the sensor with five layers to 1 ppm of $H_2S$ gas is approximately 68%. This is approximately 12% more than that of a sensor with one-layer.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.8
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• pp.152-156
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• 2004

A new tool of surface patterning technique for general purpose lithography was developed based on shadow mask method. This paper describes the fabrication of a new type of miniaturized shadow mask. The shadow mask is fabricated by photolithography and etching of 100-mm full wafer. The fabricated shadow mask has over 388 membranes with apertures of micrometer length scale ranging from 1${\mu}{\textrm}{m}$ to 100s ${\mu}{\textrm}{m}$ made on each 2mm${\times}$2mm large low stress silicon nitride membrane. It allows micro scale patterns to be directly deposited on substrate surface through apertures of the membrane. This shadow mask method has much wider choice of deposit materials, and can be applied to wider class of surfaces including chemical functional layer, MEMS/NEMS surfaces, and biosensors.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1210-1213
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• 2005

Micro heat flux sensor is used in various industries to measure heat flux. In this study, a micro heat flux sensor is fabricated using the MEMS (Micro Electro Mechanical Systems) techniques. The fabricated sensor is composed in thermopile for sensor and SU-8 for thermal resistance layer. The new method of fabrication SU-8 is proposed in this study. The sensitivity is $44\;\mu{V/(W/cm^2)}$ at steady state and Reynolds number is 91322.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.2 s.95
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• pp.60-67
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• 1999

Micro-fabrication techniques such as lithography and LIGA processes usually require large investment and are suitable for mass production. Therefore, there is a need for a new micro-fabrication technique that is flexible and more cost effective. In this paper a novel, economical and flexible method of producing micro-pattern on silicon wafer is presented. This method relies on selective removal of mask by mechanical cutting. Then micro-pattern is produced by chemical etching. V-shaped grooved of about 3 ${\mu}m$ wide and 2 ${\mu}m$ deep has been made on ${SiO_2}m$ coated silicon wafer with this method. This method may be utilized for making microstructures in MEMS application at low cost.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1050-1053
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• 2002

This paper presents metal structure that is fabricated using UV-LIGA process with PMER N-CA3000. In order to fabricate metal structure with high aspect ratio, the systematic optimization method was adopted and then the structure of $36{\mu}m$ thick mold with aspect ratio 7:1 (trench) and $32{\mu}m$ thick nickel structure was obtained. This structure is applied to the fabrication of optical switch.