• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.30-32
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• 2005

This paper reports on an LTCC-based packaging method using Au/Sn eutectic bonding process for RF MEMS applications. The proposed packaging structure was realized by a micromachining technology. An LTCC substrate consists of metal filled vertical via feedthroughs for electrical interconnection and Au/Sn sealing rim for eutectic bonding. The LTCC capping substrate and the glass bottom substrate were aligned and bonded together by a flip-chip bonding technology. From now on, shear strength and He leak rate will be measured then the fabricated package will be compared with the LTCC package using BCB adhesive bonding method which has been researched in our previous work.

• 전자공학회논문지 IE
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• v.44 no.1
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• pp.6-9
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• 2007

Twenty four types of thermopile for micro spectrometer infrared sensors were fabricated on low-stress Si3N4 membranes with $l.2{\mu}m-thickness$ using MEMS technology. Thermopile were designed and fabricated for optimum conditions by five parameters of thermocouple numbers $(16\sim48)$, thermocouple line widths $(10{\mu}m-25{\mu}m)$, thermocouple lengths $(100{\mu}m-500{\mu}m)$, membrane areas $(12mm2\sim2.52mm2)$ and junction areas $(150{\mu}m2\sim750{\mu}m2)$, respectively. It was thought that measurement results could be used for thermopile infrared sensors optimum structure for micro spectrometers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.15-21
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• 2013

In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.4
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• pp.377-384
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• 2007

A backscatter Kikuchi diffraction attachment to an SEM enables the convenient investigation of grain orientations on bulk or micro surface. Their relation to micro structural features gives insight into many aspects of anisotropic materials properties. In micro area such as Micro Electro Mechanical Systems(MEMS) devices is required in order to improve understanding of how they may be expected to perform upon the micro scale. Electro Back Scatter Diffraction (EBSD) helps us to find uniform area as MEMS material. The ${\gamma}-TiAl$ has two different lamellar structures ${\gamma}/{\alpha}2-Ti_3Al$ phase which have shows $\{111\}{\gamma}//\{0001\}{\alpha}2$ plane indexing. The micro size testing specimen was successfully made by this structural relation. Interlamellar structure specimen averagely show $20{\sim}25%$ lower fracture toughness value compare with translamellar specimens Moreover micro fracture surface and micro crack progress were observed.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1635-1636
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• 2006

In this paper, a non-vacuum packaged single crystalline silicon MEMS gyroscope is designed, fabricated and tested. To reduce air damping of the gyroscope structure for non-vacuum packaging, air damping model is used and damping is minimized by analysis. The inner and outer spring length is optimized by ANSYS simulation for rigid body motion. The gyroscope is fabricated by SiOG(Silicon On Glass) process. The performance of the gyroscope is measured to evaluate the characteristic of the gyroscope. The sensitivity, non-linearity, noise density and the bias stability are measured to 9.7693 mV/deg/s, 04265 %, 2.3 mdeg/s/rtHz and 16.1014 deg/s, respectively.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.46-48
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• 2004

A micro-scale discharge device has been fabricated using MEMS technology and failure mechanisms during DC discharge are investigated for the microstructure. The failure of sustaining the plasma is mainly caused by either open or short of the micro-electrodes, both resulting from the sputtered metal atoms during the DC discharge. The glow discharge lifetime of the microstructures is found to depend on bias circuit scheme as well as the electrode structure. Based on the understanding of the failure mechanism, a novel microstructure is suggested to improve discharge lifetime and the longer lifetime is experimentally demonstrated. In addition to the failure mechanism, an electric breakdown between two electrodes with microns gap are studied using micromachined metal structures. The electrode gap is able to be accurately controlled by thickness of a sacrificial layer and the electric breakdown was measured while varying the gap from $2{\mu}m$ to $20{\mu}m$. The electric breakdown behavior was found to highly depend on the electrode material, which was not considered in Paschen's law.

• Journal of Sensor Science and Technology
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• v.9 no.4
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• pp.297-306
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• 2000

To improve the performance of MEMS devices, fabricating single-crystalline silicon HARS (high aspect ratio structure) with thicknesses of up to several tens of micrometers has been an active research topic in recent years. However, achieving electrical isolation, which is required for actuating a structure or sensing an electrical signal, has been one of the main problems in single-crystalline silicon HARS fabrication technologies. In this paper, new isolation technologies using high aspect ratio oxide beams and sidewalls are developed to achieve electrical isolation between electrodes of single-crystalline silicon HARS. The developed isolation technologies use insulating oxide structural supports from either the structural sides or from the bottom. In this case because the trench oxide supports have a depth of several tens of ${\mu}m$, the effects of residual stress must be considered. In this paper, insulating supports are fabricated using PECVD TEOS films, the residual stress of the insulating supports is measured, and the effect of the residual stress on the structure is analyzed. It is shown using microresonators, that the developed isolation technologies can be effectively used for HARS using single-crystalline silicon.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.55-59
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• 2018

In this paper, we investigated the characteristics of shear stress type piezoresistor on a diaphragm structure formed by MEMS (Microelectromechanical System) technology of silicon-direct-bonding (SDB) wafers with Si/$SiO_2$/Si-sub. The diaphragm structure formed by etching the backside of the wafer using a TMAH aqueous solution can be used for manufacturing various sensors. In this study, the optimum shape condition of the shear stress type piezoresistor formed on the diaphragm is found through ANSYS simulation, and the diaphragm structure is formed by using the semiconductor microfabrication technique and the shear stress formed by boron implantation. The characteristics of the piezoelectric resistance are compared with the simulation results. The sensing diaphragm was made in the shape of an exact square. It has been experimentally found that the maximum shear stress for the same pressure at the center of the edge of the diaphragm is generated when the structure is in the exact square shape. Thus, the sensing part of the sensor has been designed to be placed at the center of the edge of the diaphragm. The prepared shear stress type piezoresistor was in good agreement with the simulation results, and the sensitivity of the piezoresistor formed on the $2200{\mu}m{\times}2200{\mu}m$ diaphragm was $183.7{\mu}V/kPa$ and the linearity of 1.3 %FS at the pressure range of 0~100 kPa and the symmetry of sensitivity was also excellent.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.29-54
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• 2005

Consolidation of ceramic particles at room temperature. Reduction of crystallite size and formation of nano-crystalline. Applicable to Integrate functionalceramic materials with metals and Si structure and to fabricate MEMS devises

• Journal of the Korean Society for Precision Engineering
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• v.25 no.2
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• pp.15-22
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• 2008