• Title/Summary/Keyword: M2 polarization

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Measurement of the Indoor Wireless Environment at 2.45 GHz (2.45 GHz 대역 실내 무선 환경 측정)

  • Hwang Jae-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2006.05a
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    • pp.1005-1008
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    • 2006
  • In this paper, we provide data of wireless environment in indoor for Bluetooth and wireless LAN systems. To accurately measure transmission characteristic for influence of the indoor wall, we used radiation measurement system with antennas. And various structure and material of the indoor wall are measured. Results of the measurement show that the attenuation of power is about $1\sim3dB$ for cement wall(25cm). In the case of cement wall with steel frame, the attenuation of power was increased using horizontal polarization but was not affect using vertical polarization.

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ERS-1 AND CCRS C-SAR Data Integration For Look Direction Bias Correction Using Wavelet Transform

  • Won, J.S.;Moon, Woo-Il M.;Singhroy, Vern;Lowman, Paul-D.Jr.
    • Korean Journal of Remote Sensing
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    • v.10 no.2
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    • pp.49-62
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    • 1994
  • Look direction bias in a single look SAR image can often be misinterpreted in the geological application of radar data. This paper investigates digital processing techniques for SAR image data integration and compensation of the SAR data look direction bias. The two important approaches for reducing look direction bias and integration of multiple SAR data sets are (1) principal component analysis (PCA), and (2) wavelet transform(WT) integration techniques. These two methods were investigated and tested with the ERS-1 (VV-polarization) and CCRS*s airborne (HH-polarization) C-SAR image data sets recorded over the Sudbury test site, Canada. The PCA technique has been very effective for integration of more than two layers of digital image data. When there only two sets of SAR data are available, the PCA thchnique requires at least one more set of auxiliary data for proper rendition of the fine surface features. The WT processing approach of SAR data integration utilizes the property which decomposes images into approximated image ( low frequencies) characterizing the spatially large and relatively distinct structures, and detailed image (high frequencies) in which the information on detailed fine structures are preserved. The test results with the ERS-1and CCRS*s C-SAR data indicate that the new WT approach is more efficient and robust in enhancibng the fine details of the multiple SAR images than the PCA approach.

A Study on the Deposition Condition and Molecular Orientation of the Ultrathin Organic Films using the Langmuir-Blodgett Technique (Langmuir-Blodgett 법을 이용한 유기초박막의 제작조건 및 분자배향에 관한 연구)

  • 김태완;신동명;최강훈;권영수;강도열
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.2
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    • pp.303-311
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    • 1994
  • Optimum conditions for the deposition of N-docosylquinolium-TCNQ ultrathin organic films using the Langmuir-Blodgett etchnique and the molecular orientation and alignment of the LB films were studied. The $\pi$-A isotherm of the N-docosylquinolium-TCNQ was measured at the air-water interface varying with the subphase temperature, subphase pH, compressing speed and amounts of solutions for spreading. The LB film was deposited under the surface pressure of 30mN.m and 45mN/m and other deposition conditions. The molecular orientation and alignment of the LB films were studied by the polarization absorption technique. The $\pi$-A isotherm showed that the stable N-docosylquinolium -TCNQ monolayer was formed on the water surface at the condition of 25$^{\circ}C$,pH 5.6, molecular density of 2.1${\times}$10S014T~2.6${\times}$10S014T/cmS02T. The LB film was deposited under the surface pressure of 45mN/m had better packing density, orientation and alignment than the film of 30mN/m.

Electrical and Retention Properties of MFSFET Device (MFSFET 소자의 전기적 및 리텐션 특성)

  • Chung, Yeun-Gun;Kang, Seong-Jun;Joung, Yang-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.3
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    • pp.570-576
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    • 2007
  • In this study, the characteristics of metal-ferroelectric-semiconductor FET (MFSFET) device is investigated using field-dependent polarization and square-law FET models. From drain current with the gate voltage variation, when coercive voltages of ferroelectric thin film are 0.5 and 1V, the memory windows are 1 and 2V, respectively. When the gate voltages are 0, 0.1, 0.2 and 0.3V, the difference of saturation drain currents of the MFSFET device at two threshold voltages in ID-VD curve are 1.5, 2.7, 4.0, and 5.7mA, respectively. As a result of the analysis for drain currents after tine lapse, which is based on the simulation for hysteresis loop and the fitting of retention properties of ferroelectric thin films such as PLZT(10/30/70), PLT(10) and PZT(30/70) thin film shows excellent reliability that the decrease of saturation current is about 18% after 10 years.

Passively Mode-Locked 1.93-㎛ All-Fiberized Femtosecond MOPA Laser Using a Gold-Deposited Side-Polished Fiber (금 증착 측면연마 광섬유를 이용한 1.93㎛ 모드잠금 펨토초 전광섬유 MOPA 레이저)

  • Jung, Minwan;Koo, Joonhoi;Lee, Ju Han
    • Korean Journal of Optics and Photonics
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    • v.25 no.6
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    • pp.340-345
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    • 2014
  • We experimentally demonstrate the use of a gold-deposited side-polished fiber as a $2-{\mu}m$-band polarizing device to produce mode-locked pulses from a thulium/holmium-codoped fiber ring cavity. The mode-locking effect was induced by nonlinear transmission caused by the gold-deposited side-polished fiber, due to nonlinear polarization rotation of the oscillated beam within the fiberized cavity. It is also shown that ~558-fs pulses with a peak power of ~6.7 kW could readily be produced at a wavelength of 1935 nm through subsequent thulium/holmium-codoped fiber amplification, due to the higher-order soliton compression effect.

Oxide Nanolayers Grown on New Ternary Ti Based Alloy Surface by Galvanic Anodizing-Characteristics and Anticorrosive Properties

  • Calderon Moreno, J.M.;Drob, P.;Vasilescu, C.;Drob, S.I.;Popa, M.;Vasilescu, E.
    • Corrosion Science and Technology
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    • v.16 no.5
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    • pp.257-264
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    • 2017
  • Film of new Ti-15Zr-5Nb alloy formed during galvanic anodizing in orthophosphoric acid solution was characterized by optical microscope, scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and Raman micro-spectroscopy. Its anticorrosive properties were determined by electrochemical techniques. The film had a layer with nanotube-like porosity with diameters in 500-1000 nm range. The nano layer contained significant amounts of P and O as well as alloying element. Additionally, Raman micro-spectroscopy identified oxygen as oxygen ion in $TiO_2$ anatase and phosphorous as $P_2O_7{^{4-}}$ ion in phosphotitanate compound. All potentiodynamic polarization curves in artificial Carter-Brugirard saliva with pH values (pH= 3.96, 7.84, and 9.11) depending on the addition of 0.05M NaF revealed nobler behavior of anodized alloy and higher polarization resistance indicating the film is thicker and more compact nanolayer. Lower corrosion rates of the anodized alloy reduced toxicity due to less released ions into saliva. Bigger curvature radii in Nyquist plot and higher phase angle in Bode plot for the anodized alloy ascertain a thicker, more protective, insulating nanolayer existing on the anodized alloy. Additionally, ESI results indicate anodized film consists of an inner, compact, barrier, layer and an outer, less protective, porous layer.

Characteristics of Visible Laser Diode and Its Injection-Locking (가시광 다이오드 레이저의 스펙트럼 및 주입-잠금 특성분석)

  • 남병호;박기수;권진혁
    • Korean Journal of Optics and Photonics
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    • v.5 no.2
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    • pp.278-285
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    • 1994
  • We investigated the spectral characteristics for temperature and driving current change in visible laser diode. As a result of spectrum analysis, the ratio of frequency change for temperature and driving current change were about $33 GHz/^{\circ}C$, 6.6 GHz/mA in the region which was not mode hopping range. Compared to the sharp mode hopping in the near IR single mode AlGaAs lasers, the visible laser diode showed relatively broad multimode operation in the mode hopping region. We performed the experiment of injection-locking characteristics analysis for visible laser diode. Locking half bandwidth(LHBW) was measured 0~5.0 GHz for $0~25\muW$ input power and it was dependent on the input power. Also, LHBW for polarization angle was dependent on the difference of polarization angle between master laser and slave laser. The phase change of injection-locked output beam of the slave laser diode as a function of the drive current was measured in the interferometer which was composed of master laser and slave laser. The ratio of phase change with the slope of 5.0~1.3 rad/mA was obtained within injection-locking range for the change of $2~25\muW$ input power. power.

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Effect of Zn Content on the Corrosion Behavior of Ti-6Al-4V Alloy after Plasma Electrolytic Oxidation

  • Hwang, In-Jo;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.159-159
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    • 2017
  • Ti-6Al-4V alloy have been used for dental implant because of its excellent biocompatibility, corrosion resistance, and mechanical properties. However, the integration of such implant in bone was not in good condition to achieve improved osseointergraiton. For solving this problem, calcium phosphate (CaP) has been applied as coating materials on Ti alloy implants for hard tissue applications because its chemical similarity to the inorganic component of human bone, capability of conducting bone formation and strong affinity to the surrounding bone tissue. Various metallic elements are known to play an important role in the bone formation and also affect bone mineral characteristics. Especially, Zn is essential for the growth of the human and Zn coating has a major impact on the improvement of corrosion resistance. Plasma electrolytic oxidation (PEO) is a promising technology to produce porous and firmly adherent inorganic Zn containing TiO2(Zn-TiO2)coatings on Ti surface, and the a mount of Zn introduced in to the coatings can be optimized by altering the electrolyte composition. In this study, effect of Zn content on the corrosion behavior of Ti-6Al-4V alloy after plasma electrolytic oxidation were studied by SEM, EDS, XRD, AC impedance, and potentiodynamic polarization test. The potentiodynamic polarization and AC impedance tests for corrosion behaviors were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat with a scan rate of 1.67 mV/s and potential range from -1500 mV to +2000 mV. Also, AC impedance was performed at frequencies ranging from 10 MHz to 100 kHz for corrosion resistance.

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Thiadiazolopyrimidines as Acid Corrosion Inhibitors for Mild Steel

  • Chitra, S.;Parameswari, K.;Vidhya, M.;Kalishwari, M.;Selvaraj, A.
    • Corrosion Science and Technology
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    • v.10 no.1
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    • pp.13-23
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    • 2011
  • The inhibitive action of thiadiazolopyrimidines on mild steel in 1 M $H_{2}SO_{4}$ has been studied using weight loss, gasometric studies and electrochemical polarization and AC impedance measurements. The effect of temperature on the corrosion behaviour of mild steel in 1 M $H_{2}SO_{4}$ with optimum concentration of inhibitors was studied in the temperature ranging from 313-333K The adsorption of the inhibitor on the surface of mild steel was found to be exothermic, spontaneous and followed the mechanism of physisorption. The adsorption of these compounds on mild steel surface was found to obey Langmuir adsorption isotherm. The protective film formed on the surface of mild steel by the adsorption of inhibitor in 1 M $H_{2}SO_{4}$ solution was confirmed by optical microscopic technique. Synergistic effect of halide ions on mild steel in 1 M $H_{2}SO_{4}$ was studied by weight loss technique.

Growth and Characterization of ZnO Thin Films on R-plane Sapphire Substrates by Plasma Assisted Molecular Beam Epitaxy (R-면 사파이어 기판 위에 플라즈마 분자선 에피탁시법을 이용한 산화아연 박막의 성장 및 특성평가)

  • Han Seok-Kyu;Hong Soon-Ku;Lee Jae-Wook;Lee Jeong-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.10
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    • pp.923-929
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    • 2006
  • Single crystalline ZnO films were successfully grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the R-plane sapphire was determined to be $[-1101]Al_2O_3{\parallel}[0001]ZnO,\;[11-20]Al_2O_2{\parallel}[-1100]ZnO$ based on the in-situ reflection high-energy electron diffraction analysis and confirmed again by high-resolution X-ray diffraction measurements. Grown (11-20) ZnO films surface showed mound-like morphology along the <0001>ZnO direction and the RMS roughness was about 4 nm for $2{\mu}m{\times}2{\mu}m$ area.