• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.27 no.2
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• pp.123-129
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• 2017

Objectives: The purpose of this study is to enhance the application of analytical method of polar solvents(alcohols) by GCOTC (gas chromatography open tubular column) through the system suitability test(SST) to estimate the whole chromatographic system performance(integral part). Methods: To perform the SST, carried out repeatability(n=6) as analytical method of polar solvents by GCOTC, got the retention time($t_R$), standard deviation(${\sigma}_{n-1}$) of $t_R$, baseline width($w_b=4{\sigma}_{n-1}$) and calculated dead time($t_m$) by $v_m=d^2{\pi}L(f/4)$ and $v_m=t_m$ x flow rate. Results: In this experiment, obtained the basic data, there were $t_m=2$ min, methanol($t_R=3.569$, ${\sigma}_{n-1}=0.01$, $w_b=0.04$), ethanol ($t_R=3.892$, ${\sigma}_{n-1}=0.004$, $w_b=0.016$), isopropanol($t_R=4.209$, ${\sigma}_{n-1}=0.004$, $w_b=0.016$). By using these data, calculated the corrected retention time($t_R{^{\prime}}$), capacity factor(k), separation factor(${\alpha}$), number of theoretical plate(n) and resolution($R_s$) for SST and got the good results. Conclusions: Through the SST, could reconfirm the whole chromatographic performance system(integral part) for analytical method of polar solvents by GCOTC. Therefore, this analytical method expect to be widely applied at the related areas.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.4
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• pp.483-490
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• 2009

In this paper, a novel low-damage silicon nitride passivation for 100nm InAlAs/InGaAs MHEMTs has been developed using remote ICPCVD. The silicon nitride deposited by ICPCVD showed higher quality, higher density, and lower hydrogen concentration than those of silicon nitride deposited by PECVD. In particular, we successfully minimized the plasma damage by separating the silicon nitride deposition region remotely from ICP generation region, typically with distance of 34cm. The silicon nitride passivation with remote ICPCVD has been successfully demonstrated on GaAs MHEMTs with minimized damage. The passivated devices showed considerable improvement in DC characteristics and also exhibited excellent RF characteristics($f_T$of 200GHz).The devices with remote ICPCVD passivation of 50nm silicon nitride exhibited 22% improvement(535mS/mm to 654mS/mm) of a maximum extrinsic transconductance($g_{m.max}$) and 20% improvement(551mA/mm to 662mA/mm) of a maximum saturation drain current ($I_{DS.max}$) compared to those of unpassivated ones, respectively. The results achieved in this work demonstrate that remote ICPCVD is a suitable candidate for the next-generation MHEMT passivation technique.

• Women's Health Nursing
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• v.7 no.2
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• pp.157-168
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• 2001

The purpose of this study was to investigate of the relationship of the urinary incontinence, menopausal symptom and life satisfaction in middle aged women. The subjects of this study were 235 middle aged women, living in M city, during the period from June 21 to August 31, 2000. The instruments for this study were the urinary incontinence modified and adding by Lee Young Sook(1994), the menopausal symptom developed by Song Ae Ri and Chung Eun Soon(1998) and the life satisfaction translated and modified by Suh Kyung Hee(1988). Collected data were analyzed using descriptive statistics, t-test, ANOVA, Pearson correlation coefficients and stepwise multiple regression with SAS package. The result of this are as follows : 1. The total mean score of urinary incontinence was $1.56{\pm}0.58$ with a range of 0 to 4. The mean score on the menopausal symptom was $2.05{\pm}0.43$ with a range of 1 to 4. The mean life satisfaction score was $1.14{\pm}0.41$ with a range of 0 to 2. 2.General characteristics ralated to urinary incontinence were age and numbers of children (F=7.66, p=0.000, F=2.86, p=0.037). General characteristics ralated to menopausal symptom were age (F=7.37, p=0.000), occupation (t=5.33, p=0.021), problem of children (t=6.46, p=0.011) and marital satisfaction (F=5.65, p=0.004). General characteristics ralated to life satisfaction were type of housing (t=12.06, p=0.000), problem of children (t=6.96, p=0.008) and marital satisfaction (F=18.86, p=0.000). 3.The urinary incontinence and menopausal symptom were correlated positively (r=.235, p=.000). The urinary incontinence and life satisfaction were correlated negatively (r=-.114, p=.007). The menopausal symptom and life satisfaction were correlated negatively (r=-.277, p=.000). 4.The menopausal symptom, type of housing and marital satisfaction explained 16.6% of the variance for life satisfaction in the middle aged women.

• Progress in Superconductivity
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• v.7 no.1
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• pp.46-51
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• 2005

We have developed control electronics to operate flux-locked loop (FLL), and analog signal filters to process FLL outputs for 64-channel Double Relaxation Oscillation SQUID (DROS) magnetocardiography (MCG) system. Control electronics consisting of a preamplifier, an integrator, and a feedback, is compact and low-cost due to larger swing voltage and flux-to-voltage transfer coefficients of DROS than those of dc SQUIDs. Analog signal filter (ASF) serially chained with a high-pass filter having a cut-off frequency of 0.1 Hz, an amplifier having a gain of 100, a low-pass filter of 100 Hz, and a notch filter of 60 Hz makes FLL output suitable for MCG. The noise of a preamplifier in FLL control electronics is $7\;nV/{\surd}\;Hz$ at 1 Hz, $1.5\;nV/{\surd}\;Hz$ at 100 Hz that contributes $6\;fT/{\surd}\;Hz$ at 1 Hz, $1.3\;fT/{\surd}\;Hz$ at 100 Hz in readout electronics, and the noise of ASF electronics is $150\;{\mu}V/{\surd}\;Hz$ equivalent to $0.13\;fT/{\surd}\;Hz$ within the range of $1{\sim}100\;Hz$. When DROSs are connected to readout electronics inside a magnetically shielded room, the noise of 64-channel DROS system is $10\;fT/{\surd}\;Hz$ at 1 Hz, $5\;fT/{\surd}\;Hz$ at 100 Hz on the average, low enough to measure human MCG.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.8
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• pp.5485-5491
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• 2015

The purpose of this study is to investigate PR-VEP characteristics on the perception function(S/N) and the judgement function(T/F) of MBTI. The 136 study participants, over 20 years old adults, were examined by PR-VEP and MBTI test for two months in July and August in 2013. PR-VEP was conducted in O1 and O2 by 32 channels EEG system and MBTI test was measured by Form-M online. We found that the time interval(Duration) between N75 and P100 of PR-VEP was 5.49 ms significantly shorter in the group preferring S indicator. And the latency until N75 was 4.83 ms significantly shorter in O1 and 4.27 ms shorter in O2 in the group preferring F indicator. According to these, the characteristics of groups preferring S and F indicator have influence on visual cognitive function, which is meaningful that the interpretation of brain-science can be used with recognition/judgement function of MBTI.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• The korean journal of orthodontics
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• v.45 no.4
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• pp.198-208
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• 2015

Objective: To quantify, for each activation, the effect of preactivations of differing distribution and intensity on the neutral position of T-loops (7-mm height), specifically the horizontal force, moment to force (M/F) ratio, and load to deflection ratio. Methods: A total 100 loops measuring $0.017{\times}0.025$ inches in cross-section were divided into two groups (n = 50 each) according to composition, either stainless steel or beta-titanium. The two groups were further divided into five subgroups, 10 loops each, corresponding to the five preactivations tested: preactivations with occlusal distribution ($0^{\circ}$, $20^{\circ}$, and $40^{\circ}$), gingival distribution ($20^{\circ}$), and occlusal-gingival distribution ($40^{\circ}$). The loops were subjected to a total activation of 6-mm with 0.5-mm iterations. Statistical analysis was performed using comprised ANOVA and Bonferoni multiple comparison tests, with a significance level of 5%. Results: The location and intensity of preactivation influenced the force intensity. For the M/F ratio, the highest value achieved without preactivation was lower than the height of the loop. Without preactivation, the M/F ratio increased with activation, while the opposite effect was observed with preactivation. The increase in the M/F ratio was greater when the preactivation distribution was partially or fully gingival. Conclusions: Depending on the preactivation distribution, displacement of uprights is higher or lower than the activation, which is a factor to consider in clinical practice.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.12
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• pp.6373-6386
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• 2013

This study examined the relationship between the MBTI character types and heart rate variability. The subjects were 25 students in the department of emergency medical technology in C city, Chungnam, Korea. The heart rate variability was measured under two conditions: a stable state, and in the second week and fourth week in clinical practice. The period of the heart rate variability measurements was from Jun. 21, 2013 to Jul. 26, 2013.The changes in the HRV at the stable state and during clinical practice depending on the MBTI character types, and the HRV at the stable state and during clinical practice according to the distribution chart of four character types showed a significant difference in the nHF and standard deviation of all R-R intervals (SDNN). In the changes in the HRV at the stable state and during clinical practice depending on the preference distribution chart of each indicator, the T-F group and J-P group in the nLF, T-F group and J-P group in the nHF, S-N group in the standard deviation of all R-R intervals (SDNN) and the J-P group in the mHR showed a significant difference.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.91-98
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• 2013

Magnetic sensor chip for measuring bio-magnetism is implemented in $0.18{\mu}m$ CMOS technology. The magnetic sensor chip consists of a small-sized high inductance coil sensor and an instrumentation amplifier (IA). High inductance coil sensor with suitable sensitivity and bandwidth for measurement of bio-magnetic signal is designed using electromagnetic field simulation. Low gm operational transconductance amplifier (OTA) using transconductance reduction techniques is designed for on-chip solution. Output signal sensitivity of magnetic sensor chip is $3.25fT/{\mu}V$ and reference noise of 21.1fT/${\surd}$Hz. Proposed IA is designed along with band pass filters(BPF) to reduce magnetic signal noise by using current feedback techniques. Proposed IA achieves a common mode rejection ratio of 117.5dB while the input noise referred is kept below $0.87{\mu}V$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.24-29
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• 2009

In order to model the high temperature dependence of the cutoff frequency $f_T$ in $0.18{\mu}m$ deep n-well isolated bulk NMOSFET, high temperature data of electron velocity of bulk MOSFETs from $30^{\circ}C$ to $250^{\circ}C$ are obtained by an accurate RF extraction method using measured S-parameters. From these data, an improved temperature-dependent electron velocity equation is developed and implemented in a BSIM3v3 SPICE model to eliminate modeling error of a conventional one in the high temperature range. Better agreement with measured $f_T$ data from $30^{\circ}C$ to $250^{\circ}C$ are achieved by using the SPICE model with the improved equation rather than the conventional one, verifying its accuracy of the improved one.