• 제목/요약/키워드: M.T.T.F.

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GCOTC에 의한 알코올류 분리를 위한 시스템 적합성에 관한 연구 (Study on The System Suitability Test for Alcohols Separation by GCOTC)

  • 오도석;김성화;이슬;최재구
    • 한국산업보건학회지
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    • 제27권2호
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    • pp.123-129
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    • 2017
  • Objectives: The purpose of this study is to enhance the application of analytical method of polar solvents(alcohols) by GCOTC (gas chromatography open tubular column) through the system suitability test(SST) to estimate the whole chromatographic system performance(integral part). Methods: To perform the SST, carried out repeatability(n=6) as analytical method of polar solvents by GCOTC, got the retention time($t_R$), standard deviation(${\sigma}_{n-1}$) of $t_R$, baseline width($w_b=4{\sigma}_{n-1}$) and calculated dead time($t_m$) by $v_m=d^2{\pi}L(f/4)$ and $v_m=t_m$ x flow rate. Results: In this experiment, obtained the basic data, there were $t_m=2$ min, methanol($t_R=3.569$, ${\sigma}_{n-1}=0.01$, $w_b=0.04$), ethanol ($t_R=3.892$, ${\sigma}_{n-1}=0.004$, $w_b=0.016$), isopropanol($t_R=4.209$, ${\sigma}_{n-1}=0.004$, $w_b=0.016$). By using these data, calculated the corrected retention time($t_R{^{\prime}}$), capacity factor(k), separation factor(${\alpha}$), number of theoretical plate(n) and resolution($R_s$) for SST and got the good results. Conclusions: Through the SST, could reconfirm the whole chromatographic performance system(integral part) for analytical method of polar solvents by GCOTC. Therefore, this analytical method expect to be widely applied at the related areas.

ICPCVD 질화막 Passivation을 이용한 GaAs Metamorphic HEMT 소자의 성능개선에 관한 연구 (A Study on the Performance Improvement of GaAs Metamorphic HEMTs Using ICPCVD SiNx Passivation)

  • 김동환
    • 한국군사과학기술학회지
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    • 제12권4호
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    • pp.483-490
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    • 2009
  • In this paper, a novel low-damage silicon nitride passivation for 100nm InAlAs/InGaAs MHEMTs has been developed using remote ICPCVD. The silicon nitride deposited by ICPCVD showed higher quality, higher density, and lower hydrogen concentration than those of silicon nitride deposited by PECVD. In particular, we successfully minimized the plasma damage by separating the silicon nitride deposition region remotely from ICP generation region, typically with distance of 34cm. The silicon nitride passivation with remote ICPCVD has been successfully demonstrated on GaAs MHEMTs with minimized damage. The passivated devices showed considerable improvement in DC characteristics and also exhibited excellent RF characteristics($f_T$of 200GHz).The devices with remote ICPCVD passivation of 50nm silicon nitride exhibited 22% improvement(535mS/mm to 654mS/mm) of a maximum extrinsic transconductance($g_{m.max}$) and 20% improvement(551mA/mm to 662mA/mm) of a maximum saturation drain current ($I_{DS.max}$) compared to those of unpassivated ones, respectively. The results achieved in this work demonstrate that remote ICPCVD is a suitable candidate for the next-generation MHEMT passivation technique.

일 지역 중년여성의 요실금.갱년기 증상과 생활만족도와의 관계 (The Relationship Among Urinary Incontinence, Menopausal Symptom and Life Satisfaction in Middle Aged Women)

  • 임현자
    • 여성건강간호학회지
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    • 제7권2호
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    • pp.157-168
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    • 2001
  • The purpose of this study was to investigate of the relationship of the urinary incontinence, menopausal symptom and life satisfaction in middle aged women. The subjects of this study were 235 middle aged women, living in M city, during the period from June 21 to August 31, 2000. The instruments for this study were the urinary incontinence modified and adding by Lee Young Sook(1994), the menopausal symptom developed by Song Ae Ri and Chung Eun Soon(1998) and the life satisfaction translated and modified by Suh Kyung Hee(1988). Collected data were analyzed using descriptive statistics, t-test, ANOVA, Pearson correlation coefficients and stepwise multiple regression with SAS package. The result of this are as follows : 1. The total mean score of urinary incontinence was $1.56{\pm}0.58$ with a range of 0 to 4. The mean score on the menopausal symptom was $2.05{\pm}0.43$ with a range of 1 to 4. The mean life satisfaction score was $1.14{\pm}0.41$ with a range of 0 to 2. 2.General characteristics ralated to urinary incontinence were age and numbers of children (F=7.66, p=0.000, F=2.86, p=0.037). General characteristics ralated to menopausal symptom were age (F=7.37, p=0.000), occupation (t=5.33, p=0.021), problem of children (t=6.46, p=0.011) and marital satisfaction (F=5.65, p=0.004). General characteristics ralated to life satisfaction were type of housing (t=12.06, p=0.000), problem of children (t=6.96, p=0.008) and marital satisfaction (F=18.86, p=0.000). 3.The urinary incontinence and menopausal symptom were correlated positively (r=.235, p=.000). The urinary incontinence and life satisfaction were correlated negatively (r=-.114, p=.007). The menopausal symptom and life satisfaction were correlated negatively (r=-.277, p=.000). 4.The menopausal symptom, type of housing and marital satisfaction explained 16.6% of the variance for life satisfaction in the middle aged women.

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64채널 DROS 심자도 시스템을 위한 검출 회로의 잡음 특성 (Noise Characteristics of Readout Electronics for 64-Channel DROS Magnetocardiography System)

  • 김진목;김기담;이용호;유권규;김기웅;권혁찬
    • Progress in Superconductivity
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    • 제7권1호
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    • pp.46-51
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    • 2005
  • We have developed control electronics to operate flux-locked loop (FLL), and analog signal filters to process FLL outputs for 64-channel Double Relaxation Oscillation SQUID (DROS) magnetocardiography (MCG) system. Control electronics consisting of a preamplifier, an integrator, and a feedback, is compact and low-cost due to larger swing voltage and flux-to-voltage transfer coefficients of DROS than those of dc SQUIDs. Analog signal filter (ASF) serially chained with a high-pass filter having a cut-off frequency of 0.1 Hz, an amplifier having a gain of 100, a low-pass filter of 100 Hz, and a notch filter of 60 Hz makes FLL output suitable for MCG. The noise of a preamplifier in FLL control electronics is $7\;nV/{\surd}\;Hz$ at 1 Hz, $1.5\;nV/{\surd}\;Hz$ at 100 Hz that contributes $6\;fT/{\surd}\;Hz$ at 1 Hz, $1.3\;fT/{\surd}\;Hz$ at 100 Hz in readout electronics, and the noise of ASF electronics is $150\;{\mu}V/{\surd}\;Hz$ equivalent to $0.13\;fT/{\surd}\;Hz$ within the range of $1{\sim}100\;Hz$. When DROSs are connected to readout electronics inside a magnetically shielded room, the noise of 64-channel DROS system is $10\;fT/{\surd}\;Hz$ at 1 Hz, $5\;fT/{\surd}\;Hz$ at 100 Hz on the average, low enough to measure human MCG.

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MBTI의 인식기능(S/N), 판단기능(T/F)에 대한 PR-VEP 특성연구 (Study about PR-VEP Characteristics on Perception Function and Judgement Function of MBTI)

  • 설지용;박병운
    • 한국산학기술학회논문지
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    • 제16권8호
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    • pp.5485-5491
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    • 2015
  • 본 연구의 목적은 MBTI의 인식기능(S/N)과 판단기능(T/F)에 대한 문양역전 시각유발전위(PR-VEP)의 특성을 알아보고자 하는 것이다. 연구 대상자는 20세 이상의 성인남녀 136명을 대상으로 2013년 7월부터 8월까지 2개월 동안 PR-VEP와 MBTI검사를 실시하였다. PR-VEP검사는 32채널 뇌파측정기를 이용하여 O1, O2에서 측정하였고, MBTI검사는 Form-M 온라인검사방법을 이용하였다. 연구결과는 S지표 선호집단에서 PR-VEP의 N75와 P100 사이의 시간간격(Duration)이 5.49 ms 유의미하게 짧았고, F지표 선호집단에서 PR-VEP의 N75가 나타나기까지의 잠복기(Latency)가 O1에서 4.83 ms, O2에서 4.27 ms 유의미하게 짧았다. 이는 S유형과 F유형의 특징이 시각적 인지기능과 관계가 있다는 것을 의미하는 것으로, MBTI의 인식기능/판단기능 각 지표에 대한 뇌과학적 해석을 더할 수 있다는 점이 본 연구가 갖는 의의이다.

단결정 실리콘 TFT Cell의 적용에 따른 SRAM 셀의 전기적 특성 (The Electrical Characteristics of SRAM Cell with Stacked Single Crystal Silicon TFT Cell)

  • 이덕진;강이구
    • 한국컴퓨터산업학회논문지
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    • 제6권5호
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    • pp.757-766
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    • 2005
  • There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

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Effect of activation and preactivation on the mechanical behavior and neutral position of stainless steel and beta-titanium T-loops

  • de Castro, Saul Matos;Moreira, Rui;Braga, Ana Cristina;Ferreira, Afonso Pinhao;Pollmann, Maria Cristina
    • 대한치과교정학회지
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    • 제45권4호
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    • pp.198-208
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    • 2015
  • Objective: To quantify, for each activation, the effect of preactivations of differing distribution and intensity on the neutral position of T-loops (7-mm height), specifically the horizontal force, moment to force (M/F) ratio, and load to deflection ratio. Methods: A total 100 loops measuring $0.017{\times}0.025$ inches in cross-section were divided into two groups (n = 50 each) according to composition, either stainless steel or beta-titanium. The two groups were further divided into five subgroups, 10 loops each, corresponding to the five preactivations tested: preactivations with occlusal distribution ($0^{\circ}$, $20^{\circ}$, and $40^{\circ}$), gingival distribution ($20^{\circ}$), and occlusal-gingival distribution ($40^{\circ}$). The loops were subjected to a total activation of 6-mm with 0.5-mm iterations. Statistical analysis was performed using comprised ANOVA and Bonferoni multiple comparison tests, with a significance level of 5%. Results: The location and intensity of preactivation influenced the force intensity. For the M/F ratio, the highest value achieved without preactivation was lower than the height of the loop. Without preactivation, the M/F ratio increased with activation, while the opposite effect was observed with preactivation. The increase in the M/F ratio was greater when the preactivation distribution was partially or fully gingival. Conclusions: Depending on the preactivation distribution, displacement of uprights is higher or lower than the activation, which is a factor to consider in clinical practice.

MBTI성격유형에 따른 병원 임상실습 중인 응급구조학과 학생의 심박변이도 변화에 관한 연구 (Heart rate variability of students in hospital clinical practice by MBTI character types)

  • 정준호
    • 한국산학기술학회논문지
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    • 제14권12호
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    • pp.6373-6386
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    • 2013
  • 본 연구는 MBTI 성격유형과 심박변이도의 관계를 조사하기 위해 시도된 연구이다. 충청남도 C 시에 소재 한 N대학교 일개 응급구조학과 재학생들을 대상으로 학교 내에서 안정상태로 측정한 심박변이도와 병원 임상실습 중 2주째와 4주째에 측정한 심박변이도를 비교분석하였다. 자료수집기간은 2013년 6월 21일부터 7월 23일까지였으며, MBTI 성격유형에 따른 안정 및 실습기간의 심박변이도의 변화에서 네 가지 성격유형별 분포도에 따른 안정 및 실습기간의 HRV에서는 nHF와 SDNN에서 유의한 차를 보였다. 전체 지표별 선호 분포도에 따른 안정 및 실습기간의 심박변이도의 변화에서 nLF는 T-F, J-P 그룹, nHF에서는 T-F, J-P 그룹, SDNN에서는 S-N, mHR에서는 J-P 그룹에서 유의한 차이가 있었다.

생체자기 신호측정을 위한 고인덕턴스 코일 내장형 온칩 자기센서 (On-chip Magnetic Sensor with Embedded High Inductance Coil for Bio-magnetic Signal Measurement)

  • 류현준;최준림
    • 전자공학회논문지
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    • 제50권6호
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    • pp.91-98
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    • 2013
  • 생체자기신호 측정을 위해 고인덕턴스 코일과 계측 증폭기를 내장한 자기센서칩을 $0.18{\mu}m$ CMOS공정으로 제작하였다. 생체자기신호를 측정하기 적합한 감도와 대역폭을 가지는 고인덕턴스 코일센서를 전자기장 시뮬레이션 프로그램으로 설계하였으며, 온칩에 구현하기 위해 트렌스컨덕턴스 감쇄방법 적용한 low gm OTA를 구현하였다. 자기센서칩의 출력신호 감도는 $3.25fT/{\mu}V$이며, output reference noise는 21.1fT/${\surd}$Hz이다. 계측 증폭기부분은 current feedback 기반으로 설계되었으며, 자기 신호 잡음을 줄이기 위해서 0.5~5kHz의 대역의 BPF를 설계하였다. MPW칩 테스트에서 common mode rejection ratio(CMRR)는 117.5dB로 측정하였으며, input reference noise가 $0.87{\mu}V$ 이하로 유지되도록 설계하였다.

S-파라미터 측정을 통한 MOSFET 캐리어 속도의 고온 종속 SPICE 모델링 (High Temperature Dependent SPICE Modeling for Carrier Velocity in MOSFETs Using Measured S-Parameters)

  • 정대현;고봉혁;이성현
    • 대한전자공학회논문지SD
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    • 제46권12호
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    • pp.24-29
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    • 2009
  • $0.18{\mu}m$ deep n-well 벌크 NMOSFET에서 측정된 차단주파수 $f_T$의 고온종속성을 모델화하기 위해, 측정된 S-파라미터를 사용한 정확한 RF 방법으로 $30^{\circ}C$에서 $250^{\circ}C$까지 전자속도 고온 데이터가 추출되었다. 이러한 추출데이터를 사용하여 개선된 온도종속 전자속도 방정식이 높은 온도의 범위에서 생기는 기존 방정식의 모델링 오차를 없애기 위해 개발되었으며 BSIM3v3 SPICE RF 모델에 구현되었다. 개선된 온도 종속 방정식은 기존 모델보다 $30^{\circ}C$에서 $250^{\circ}C$까지 측정된 $f_T$와 더 잘 일치하였으며, 이는 개선된 방정식의 정확성을 입증한다.