• Bulletin of the Korean Chemical Society
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• v.24 no.12
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• pp.1805-1808
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• 2003

The simultaneous determination of As(III), As(V), and DMA has been performed by ion chromatography (IC) coupled with inductively coupled plasma-mass spectrometry (ICP-MS). The separation of the three arsenic species was achieved by an anionic separator column (AS 7) with an isocratic elution system. The separated species were directly detected by ICP-MS as an element-selective detection method. The IC-ICP-MS technique was applied for the determination of arsenic species in a NIST SRM 1643d water sample. An As(III) only was detected in the sample. The detection limits of As(III), As(V) and DMA were 0.31, 0.45, and 2.09 ng/mL, respectively. It was also applied for the determination of arsenic species in a human urine obtained by a volunteer, and three arsenic species were identified. The determination of total As in human urines that were obtained from 25 volunteers at the different age was also carried out by ICP-MS.

• Journal of the Korean institute of surface engineering
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• v.45 no.4
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• pp.168-173
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• 2012

A real-time monitoring of an immersed antenna type inductively coupled plasma (ICP) was done with optical emission spectroscopy (OES) to check the reports that sputtered atom density is decreasing as the ICP power is increased. At 10 mTorr pressure of Ar, Mg was sputtered by a bipolar pulsed power supply into 2 MHz ICP which has an insulator covered 2.5 turn antenna. Emitted light was collected in two different positions: above the target and inside the ICP region. With 100 W of Mg sputtering power, the intensities of Mg I (285.06 nm), Mg II (279.48 nm), Ar I (420.1 nm) were increased constantly with ICP power from 100 W to 600 W. At 500 W, the intensity of $Mg^+$ exceeded that of Mg under PID controlled discharge voltage of 180 V. The ratio of Mg II/Mg I was increased from 0.45 to 2.71 approximately 6 times.

• Bulletin of the Korean Chemical Society
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• v.16 no.5
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• pp.422-427
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• 1995

In a stream of water sample, trace metal ions are quantitatively coprecipitated with Indium hydroxide and filtered. The filtered precipitate is continuously dissolved in 3 M nitric acid and introduced to ICP directly. The lead, cadmium, and copper are concentrated more than 10-fold and determined with ICP-AES at a sampling frequency of 10/hour. The detection limits are 2.89, 1.43,0.52 ppb for lead, cadmium, and copper respectively. Recoveries of lead, cadmium, and copper are 98.7, 94.3, and 104.5% respectively. The RSD values for three elements are about 3-5% currently.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.98-98
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• 2000

초고집적(ULSI) 반도체 소자의 multilevel metalization을 위한 중간 유저네로서 저 유전상수(k<)와 높은 열적안정성(>45$0^{\circ}C$)을 갖는 새로운 물질을 도입하는 것이 필요하다. 중합체 박막은 낮은 유전상수와 높은 열적 안정성으로 인하여 low-k 물질로 적당하다고 여겨진다. PECVD에 의한 plasma polymer 박막의 증착은 많이 보고되어 왔으마 고밀도 플라즈마 형성이 가능하고 기판으로 유입되는 ion의 energy 조절이 가능한 inductively coupled plasma(ICP) CVD에 의한 plasma polymer 박막에 대한 연구는 보고된 바 없다. 본 연구에서는 Mtehyl-cyclohexane precusor를 사용하여 substrate에 bias를 주면서 inductively coupled plasma(ICP)를 이용하여 플라즈마 폴리머 박막(plasma polymerized methyl-cyclohexane : 이하^g , pp MCH라 칭함)을 증착하였으며 ICP power와 substrate bias(SB) power가 증착된 박막의 특성에 어떠한 영향을 미치는지 알아보았다. 증착된 박막의 유전상 수 및 열적 안정성은 ICP power의 변화에 비해 SB power의 변화에 더 크게 영향을 받았다.^g , pp MCH 박막은 platinum(Pt) 기판과 silicon 기판위에서 같이 증착되었다. Methyl-cyclohexane precursor는 4$0^{\circ}C$로 유지된 bubbler에 담겨지고 carrier 가스 (H2:10%, He:90%)에 의해 reactor 내부로 유입된다.^g , pp MCH 박막은 증착압력 350 mTorr, 증착온도 6$0^{\circ}C$에서 \circled1SB power를 10W에 고정시키고 ICP power를 5W부터 70W까지, \circled2ICP power를 10W에 고정시키고 SB power를 5W부터 70W까지 변화하면서 증착하였다. 유전 상수 및 절연성은 Al/PPMCH//Pt 구조의 capacitor를 만들어서 측정하였으며, 열적 안정성은 Ar 분위기에서 30분간의 열처리 전후의 두께 변화를 측정함으로써 분석하였다. SB power 10W에서 ICP power가 5W에서 70w로 증가함에 따라 유전상수는 2.65에서 3.14로 증가하였다. 열적 안정성은 ICP power의 증가에 따라서는 크게 향상되지 않은 것으로 나타났다. ICP power 10W에서 SB power가 5W에서 70W로 증가함에 따라 유전상수는 2.63에서 3.46으로 증가하였다. 열적 안정성은 SB power의 증가에 따라 현저하게 향상되었으며 30W 이상에서 증착된 박막은 45$0^{\circ}C$까지 안정하였고, 70W에서 증착된 박막은 50$0^{\circ}C$까지 안정하였다. 열적 안정성은 ICP power의 증가에 따라서는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1782-1786
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• 2008

To investigate the characteristics of elemental components of atmospheric particles in Cheonan, atmospheric particles were sampled using a high volume air sampler equipped with a 5-stage cascade impactor during 2006. 16 elemental concentrations in fine and coarse particles were determined using ICP-AES and ICP-MS. The total mass concentrations of fine and coarse particles were 33.23 and $20.66{\mu}g/m3$, respectively, and the total elemental concentrations were 1.27, $1.71{\mu}g/m3$, occupying 3.8 and 8.3% of the total mass. Fe, Al, Ti were the most abundant elements in both fine and coarse particles, and the total Pb concentration was 84.55ng/m3, below the National standard. Enrichment factor for Sc, Cr, Cu, Zn, As, Se, Sn, Pb in fine particles were above 1,000. This indicates that the elements in fine particles are mainly from the anthropogenic sources including automobiles.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.6
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• pp.620-625
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• 2006

In this investigation, an ICP-DRC/MS method to measure arsenic with ultra-trace concentration without any interference by the compounds such as $^{40}Ar^{35}Cl^+\;and\;^{40}Ca^{35}Cl^+$, which disturb the precise measurement of arsonic was described. Thus, the oxgen was introduced into the dynamic reaction cell as reaction gas and reacted with arsenic ion created in plasma gas, $AsO^+$ was formed and detected with m/z of 91 by ICP-MS. It resulted in better detection limit than the old method with m/z of 75($As^+$). The optimum condition for oxygen supply as the reaction gas was 0.5 mL/min. The analytical features of the method are as follows: detection limit of $0.02{\mu}g/L$, precision(RSD) of 3.4%, and recovery of 96%. Arsenic in the water samples from the tributary streams to the Han River and the main stream of Paldang were analyzed with this method to identify the characteristics in its distribution. The concentration of As ranged from 0.53 to $1.26{\mu}g/L$. We could measure As with very low concentration, less than $1.0{\mu}g/L$, with excellent reproducibility. The method developed is expected to be applied to analyze As of the samples from sea water, food, and domestic and industrial waste water which have high concentration of Cl and/or Ca.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.244-250
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• 2008

An inductively coupled plasma etching process to replace an existing slower rate reactive ion etching process for $60{\mu}m$ diameter via-holes using Cl2/BCl3 gases has been investigated. Process pressure and platen power were varied at a constant ICP coil power to reproduce the RIE etched $200{\mu}m$ deep via profile, at high etch rate. Desired etch profile was obtained at 40 m Torr pressure, 950 W coil power, 90W platen power with an etch rate ${\sim}4{\mu}m$/min and via etch yield >90% over a 3-inch wafer, using $24{\mu}m$ thick photoresist mask. The etch uniformity and reproducibility obtained for the process were better than 4%. The metallized via-hole dc resistance measured was ${\sim}0.5{\Omega}$ and via inductance value measured was $\sim$83 pH.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.138-141
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• 2002

The channel of the superconducting Flux Flow Transistor has been fabricated with plasma etching method using ICP. The ICP conditions were 700 W of ICP power, 150 W of rf chuck power, 5 mTorr of the pressure in chamber and 1:1 of Ar : $Cl_2$, respectively. The channel etched by plasma gas showed superconducting characteristics of over 77 K and superior surface morphology. The critical current of SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained $r_m$ values were smaller than $0.1\Omega$ at a bias current of 40 mA. The current gain was about 0.5. Output resistance was below $0.2\Omega$.

• Journal of Korean Neurosurgical Society
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• v.64 no.6
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• pp.957-965
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• 2021

Objective : Rapid increase in intracranial pressure (ICP) can result in hypertension, bradycardia and apnea, referred to as the Cushing phenomenon. During decompressive craniectomy (DC), rapid ICP decreases can cause changes in mean atrial blood pressure (mABP) and heart rate (HR), which may be an indicator of intact autoregulation and vasomotor reflex. Methods : A total of 82 patients who underwent DC due to traumatic brain injury (42 cases), hypertensive intracerebral hematoma (19 cases), or major infarction (21 cases) were included in this prospective study. Simultaneous ICP, mABP, and HR changes were monitored in one minute intervals during, prior to and 5-10 minutes following the DC. Results : After DC, the ICP decreased from 38.1±16.3 mmHg to 9.5±14.2 mmHg (p<0.001) and the mABP decreased from 86.4±14.5 mmHg to 72.5±11.4 mmHg (p<0.001). Conversly, overall HR was no significantly changed in HR, which was 100.1±19.7 rate/min prior to DC and 99.7±18.2 rate/min (p=0.848) after DC. Notably when the HR increased after DC, it correlated with a favorable outcome (p<0.001), however mortality was increased (p=0.032) when the HR decreased or remained unchanged. Conclusion : In this study, ICP was decreased in all patients after DC. Changes in HR were an indicator of preserved autoregulation and vasomotor reflex. The clinical outcome was improved in patients with increased HR after DC.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.2
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• pp.128-131
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• 2004

In this study Bosch etching process repeating etch and deposition by STS-ICP ASEHR was evaluated. Fundamentally etch depth changes were affected by thickness of deposited PR, $SiO_2$ and depth, and pattern size on the substrate. However etch rates were observed to be changed by variable parameters such as platen power, coil power, and process pressure. Etch rate showed $1.2\mu{m}/min$ and sidewall profile showed $90\pm0.2^\circ$ with platen power 12W, coil power 500W, and etch/passivation cycle 6/7sec. It was confirmed that this result was very typical to Bosch process utilizing ICP.