• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.4 no.2
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• pp.1-8
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• 2005

In this paper, n system did research about effect that interference effect with neighborhood single equipment or group equipment gets in DMB service. For this, 2.6425 GHz SDMB(Satellite Digital Multimedia Broadcasting) that a special of electric wave interference is near frequency-band including interference of signal by unnecessary radiation level that is radiated in UWB system, and degree of 3.4125GHz broadcasting relay net that is In-band frequency-band and interference effect that get in service analyzed comparison ud, modulation of broadcasting relay net and interference measurement equipment used Impulse and OFDM methods. Impulse method was $BER=1{\times}10^4$ that broadcasting signal receiption is possible at 1.4m point because interference effect happens from 2m point in SDMB system, and it was $BER=1^{\times}10-4$ that OFDM method receives interference effect from 0.8m point and broadcasting signal receiption is possible at 0.5m point. Also, about gap-filler center frequency, in case of space interval more than 0.01m, there was no interference effect. Therefore, for the electric wave of W system that is small output applies to system without interference effect in DMB service, confirmed that UWB system of OFDM method is less interference effect than UWB system of impulse method.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.594-597
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• 2002

Silicon Oxynitride(SiON) thick films on p-type silicon(100) wafers have obtained by using plasma-enhanced chemical vapor deposition from SiH$_4$ , N$_2$O and N$_2$. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4620 to 1.5312. A high deposition power of 180 W leads to deposition rates of up to 5.92${\mu}$m/h. The influence of the deposition condition on the chemical composition was investigated using X-ray photoelectron spectroscopy. After deposition of the SiON thick films, the films were annealed at 1050$^{\circ}C$ in a nitrogen atmosphere for 2 h to remove absorption band near 1.5${\mu}$m.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.358-365
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• 2008

A differential-gain-controlled LNA is designed and implemented in 0.18 um CMOS technology for $3.1{\sim}4.8GHz$ UWB system. In high gain mode, measurements show a differential power gain of $14.1{\sim}15.8dB,\;13.3{\sim}15dB$, respectably, an input return loss higher then 10dB, an input IP3 of -19.3 dBm, a noise figure of $4.85{\sim}5.09dB$, while consuming only 19.8 mW of power from a 1.8V DC supply. In low gain mode, measurements show a differential power gain of $-6.1{\sim}-4.2dB,\;-7.6{\sim}-5.6dB$, respectably, an input return loss higher then 10dB, an input IP3 of -1.45 dBm, a noise figure of $8.8{\sim}10.3dB$, while consuming only 5.4mW of power from a 1.8V DC supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1087-1093
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• 2012

In this paper, we implemented a HF-band magnetic-field communication system consisting of an amplitude shift keying(ASK) transmitter, a pair of loop antennas, and an ASK receiver. Especially, we suggested a new ASK transmitter architecture, where a drain bias of class E amplifier is switched alternatively between two voltage levels with respect to input data. A maximum 5 W class E amplifier was designed using a low cost IRF510 power MOSFET at the frequency of 6.78 MHz. A measured sensitivity of the designed ASK receiver is -78 dBm, which consists of a log amplifier, a filter, and a comparator. Maximum communication range of magnetic-wave communication system with loop antennas was calculated using magnetic field equations in both near-field and far-field ranges. Also, in order to verify the calculated values, an indoor propagation loss was measured using a pair of loop antennas whose dimensions are $30{\times}30cm$. Maximum operating range is estimated about 35 m in case of transmitter's output power of 1 W and receiver sensitivity of -70 dBm, respectively. Finally, the communication field test using the designed ASK transmitter and receiver was successfully done at the distance of 5 m.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.5
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• pp.393-396
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• 2018

Herein, a 94-GHz low-noise amplifier (LNA) using the 65-nm CMOS process is presented. The LNA is composed of a four-stage differential common-source amplifier and impedance matching is accomplished with transformers. The fabricated LNA chip shows a peak gain of 25 dB at 94 GHz and has a 3-dB bandwidth at 5.5 GHz. The chip consumes 46 mW of DC power from a 1.2-V supply, and the total chip area, including the pads, is $0.3mm^2$.

• Proceedings of the KSRS Conference
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• 1999.11a
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• pp.158-164
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• 1999

This paper investigated and evaluated the NASA's Shuttle Imaging Radar-C (SIR-C) multiple frequency SAR data for differential backscattering effects of microwave from the surface geological materials overlying the skarn type mineralization. Although an integrated approach in mineral exploration is more cost effective and is well in use, there are still many technical and scientific issues to be further investigated and researched. In this study we have reprocessed several sets of previously surveyed exploration data and experimented with fuzzy logic digital fusion of the preprocessed data with respect to chosen exploration targets. Among the numerous fuzzy logic operators, which are currently available for a data driven integrated exploration strategy, we used varying combinations of fuzzy MIN, fuzzy MAX, and fuzzy SUM operators along with Gamma operator for fusion of exploration data, including the contact metamorphic zone information. The final exploration target tested was a skarn type W-Mo-F mineralization in the study area. The fuzzy logic derived mineral potential anomaly almost exactly matched the differential backscattering anomalies on the C-band and L-band SIR_C data when overlaid on each other. Although this high degree of correlation between these two data sets is remarkable, the differential backscattering anomaly over the skarn type W-Mo-F mineralization in the study area requires further investigation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.172-175
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• 2000

본 논문에서는 무선마이크용 특정소출력무선기기의 송수신단을 설계하고 제작하여 특성을 측정하였다. 무선마이크용 특정소출력무선기기의 주파수 대역 740.000~752.000MHz를 사용하였고, 점유주락수대폭의 허용치 200kHz, 최대주파수편이 $\pm$75kHz를 만족하도록 설계하였다. PLL Synthesized, 주파수 변조, Dual Conversion 방식을 사용하였으며 Compander Type은 2:1이다. 설계된 무선마이크 시스템의 출력은 10mW이하이고, 50-20,000Hz의 주파수 응답을 가지며 Hi-fi Audio를 전송할 수 있다. 송수신단의 Total Harmonic Distortion 은 1.5% 이하이다.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.70-73
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• 2006

Pentacene films, grown on polyethylene terephthalate (PET) substrates, were doped with Iodine. ESR measurements were made for the films in the temperature range of 100-300 K. Two regimes of doping stages were discernible: a light (intercalation) doping regime and a heavy doping regime. The light doping regime was concluded to be dominated by localized holes that were trapped at low temperatures, which indicated trap states near the valence band edge.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.194-194
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• 2004

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.670-680
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• 2010

A low power single-chip CMOS receiver for 60 GHz mobile application are proposed in this paper. The single-chip receiver consists of a 4-stage current re-use LNA with under 4 dB NF, Cgs compensating resistive mixer with -9.4 dB conversion gain, Ka-band low phase noise VCO with -113 dBc/Hz phase noise at 1 MHz offset from 26.89 GHz, high-suppression frequency doubler with -0.45 dB conversion gain, and 2-stage current re-use drive amplifier. The size of the fabricated receiver using a standard 0.13 ${\mu}m$ CMOS technology is 2.67 mm$\times$0.75 mm including probing pads. An RF bandwidth is 6.2 GHz, from 55 to 61.2 GHz and an LO tuning range is 7.14 GHz, from 48.45 GHz to 55.59 GHz. The If bandwidth is 5.25 GHz(4.75~10 GHz) The conversion gain and input P1 dB are -9.5 dB and -12.5 dBm, respectively, at RF frequency of 59 GHz. The proposed single-chip receiver describes very good noise performances and linearity with very low DC power consumption of only 21.9 mW.