• 제목/요약/키워드: M/N-Detector

검색결과 167건 처리시간 0.026초

A Polycrystalline CdZnTe Film and Its X-ray Response Characteristics for Digital Radiography

  • Kim, Jae-Hyung;Park, Chang-Hee;Kang, Sang-Sik;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • 제4권5호
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    • pp.15-18
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    • 2003
  • The Cd$\_$1-x/Zn$\_$x/Te film was produced by thermal evaporation for the flat-panel X-ray detector. The crystal structure and the surface morphology of poly crystalline Cd$\_$1-x/Zn$\_$x/Te film were examined using XRD and SEM, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in a polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$\_$0.7/Zn$\_$0.3/Te thin film were measured to 0.3 1nA/$\textrm{cm}^2$ and 260 pC/$\textrm{cm}^2$ at an applied voltage of 2.5 V/$\mu\textrm{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$\_$1-x/Zn$\_$x/Te detectors reduced the leakage current and improved the X-ray sensitivity significantly. The leakage current was drastically diminished by the formation of thin parylene layer in the Cd$\_$0.7/Zn$\_$0.3/Te detector.

Design and Evaluation of a High Concentration, High Penetration Unipolar Corona Ionizer for Electrostatic Discharge and Aerosol Charging

  • Intra, Panich;Tippayawong, Nakorn
    • Journal of Electrical Engineering and Technology
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    • 제8권5호
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    • pp.1175-1181
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    • 2013
  • The aim of this paper is to design and evaluate a high concentration, high penetration unipolar corona ionizer. The electrostatic characteristics in terms of voltage-current relationships of the present ionizer in the discharge zones for positive and negative coronas were discussed. Using ion current measurement, the concentration and penetration of ions were evaluated at corona voltages across the needle electrodes between 1 and 4 kV, flow rates between 1 and 5 L/min, and an operating pressure of 1 atm. In the discharge zone of the ionizer, the highest ion concentrations were found to be about $1.71{\times}10^{14}$ and $5.09{\times}10^{14}\;ions/m^3$ for positive and negative coronas, respectively. At the outlet of the ionizer, it was found that the highest ion concentration was about $1.95{\times}10^{13}$ and $1.91{\times}10^{13}\;ions/m^3$ for positive and negative coronas, respectively. The highest ion penetration for positive and negative coronas through the ionizer was found to be about 98 % and 33 %, respectively. The $N_it$ product for positive and negative coronas was also found to $1.28{\times}10^{13}$ and $7.43{\times}10^{13}\;ions/m^3s$, respectively. From the findings, this ionizer proved to be particularly useful as an aerosol charger for positive and negative charge before the detector in an electrical aerosol detector.

오류 정정기능이 내장된 6-비트 70MHz 새로운 Interpolation-2 Flash ADC 설계 (A 6-bit, 70MHz Modified Interpolation-2 Flash ADC with an Error Correction Circuit)

  • 박정주;조경록
    • 대한전자공학회논문지SD
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    • 제41권3호
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    • pp.83-92
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    • 2004
  • 본 논문에서는 새로운 interpolation-2 방식의 비교기 구조를 제안하여 칩 면적과 전력 소모를 줄이며 오류정정 회로를 내장하는 6-비트 70㎒ ADC를 설계하였다. Interpolation 비교기를 적용하지 않은 flash ADC의 경우 2n개의 저항과 2n -1개의 비교기가 사용되며 이는 저항의 수와 비교기의 수에 비례하여 많은 전력과 큰 면적을 필요로 하고 있다. 또한, interpolation-4 비교기를 적용한 flash ADC는 면적은 작으나 단조도, SNR, INL, DNL 특성이 떨어진다는 단점이 있었다. 본 논문에서 설계한 interpolation-2 방식의 ADC는 저항, 비교기, 앰프, 래치, 오류정정 회로, 온도계코드 디텍터와 인코더로 구성되며, 32개의 저항과 31개의 비교기를 사용하였다. 제안된 회로는 0.18㎛ CMOS 공정으로 제작되어 3.3V에서 40mW의 전력소모로 interpolation 비교기를 적용하지 않은 flash ADC에 비해 50% 개선되었으며, 칩 면적도 20% 감소되었다. 또한 노이즈에 강한 오류정정 회로가 사용되어 interpolation-4 비교기를 적용한 flash ADC 에 비해 SNR이 75% 개선된 결과를 얻었다.

초전도 디바이스를 사용한 테라헤르츠파 검출기 (Terahertz Detector Using Superconductor Device)

  • 강광용;백문철;곽민환;강철
    • 전자통신동향분석
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    • 제21권5호통권101호
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    • pp.109-118
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    • 2006
  • 조셉슨 터널접합을 사용한 초전도 혼합기 또는 믹서(SIS mixer)와 매우 얇은 초전도박막을 이용한 초전도 혼합기(HEB mixer)는 초전도 현상에 있어서의 거시적 양자효과를 유발하는 강한 비선형성을 가지기 때문에, 종래의 전자파 검출기로는 구현이 어렵고 또한 극도로 낮은 잡음특성을 실현한다. 테라헤르츠(THz) 주파수 영역용 고감도검출기로서도 기대되는 질화니오븀(NbN) 박막을 사용한 SIS 혼합기와 HEB 혼합기의 개발현황과 연구결과에 대하여 소개하고자 한다. 그리고 최근에 많이 연구되고 있는 펨토초레이저와 고온초전도 상호작용을 이용한 테라헤르츠 연구결과도 소개한다.

An Assessment of the Secondary Neutron Dose in the Passive Scattering Proton Beam Facility of the National Cancer Center

  • Han, Sang-Eun;Cho, Gyuseong;Lee, Se Byeong
    • Nuclear Engineering and Technology
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    • 제49권4호
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    • pp.801-809
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    • 2017
  • The purpose of this study is to assess the additional neutron effective dose during passive scattering proton therapy. Monte Carlo code (Monte Carlo N-Particle 6) simulation was conducted based on a precise modeling of the National Cancer Center's proton therapy facility. A three-dimensional neutron effective dose profile of the interior of the treatment room was acquired via a computer simulation of the 217.8-MeV proton beam. Measurements were taken with a $^3He$ neutron detector to support the simulation results, which were lower than the simulation results by 16% on average. The secondary photon dose was about 0.8% of the neutron dose. The dominant neutron source was deduced based on flux calculation. The secondary neutron effective dose per proton absorbed dose ranged from $4.942{\pm}0.031mSv/Gy$ at the end of the field to $0.324{\pm}0.006mSv/Gy$ at 150 cm in axial distance.

A Method for Determining Dead Times of a G.M. Defector as a Function of the Count Rate

  • Ro, Seung-Gy
    • Nuclear Engineering and Technology
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    • 제3권1호
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    • pp.3-7
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    • 1971
  • $Mn^{56}$ 방사성 물질을 이용하여 방사능 측정계수율에 따라 변화되는 한 가이가 검출기의 불감시간을 결정하는 방법을 탐구하였다. (equation omitted)는 이 검출기의 불감시간과 방사능 측정계수율과의 한 관계를 결정 할 수 있는 유용한 공식으로 생각되었다. 여기에서 (equation omitted)(N$_1$)는 방사능 측정계수율 N$_1$에 대한 불감시간이며 N$_1$은 첫 측정시각(이 시각을 0시로 잡는다)에서 방사능측정계수율이고 Nt는 첫 측정시각으로부터 t라는 시간후에 얻어진 계수율이며 λ는 방사능 붕괴상수이고 t는 두 측정시각의 시간차를 의미한다. 이 공식에 의하여 얻어진 불감시간에 따라 모든 방사능 측정자료를 교정하고 시간에 따른 그 계수율의 변화를 관찰한 결과 이미 보고된 $Mn^{56}$ 방사능 붕괴형식을 잘따르고 있음을 보여 주었다. 한편 이 공식을 이용한 결과를 보면 방사능 계수율 대 불감시간과의 관계로부터 얻은 불감시간은 방사능 측정계수율이 증가함에 따라 감소현상을 나타냈다.

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Design of A 1.8-V CMOS Frequency Synthesizer for WCDMA

  • Lee, Young-Mi;Lee, Ju-Sang;Ju, Ri-A;Jang, Bu-Cheol;Yu, Sang-Dae
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -2
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    • pp.1312-1315
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    • 2002
  • This research describes the design of a fully integrated fractional-N frequency synthesizer intended for the local oscillator in IMT-2000 system using 0.18-$\mu\textrm{m}$ CMOS technology and 1.8-V single power supply. The designed fractional-N synthesizer contains following components. Modified charge pump uses active cascode transistors to achieve the high output impedance. A multi-modulus prescaler has modified ECL-like D flip-flop with additional diode-connected transistors for short transient time and high frequency operation. And phase-frequency detector, integrated passive loop filter, LC-tuned VCO having a tuning range from 1.584 to 2.4 ㎓ at 1.8-V power supply, and higher-order sigma-delta modulator are contained. Finally, designed frequency synthesizer provides 5 ㎒ channel spacing with -122.6 dBc/Hz at 1 ㎒ in the WCDMA band and total output power is 28 mW.

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OLED광원이 집적화된 마이크로 플루이딕칩의 제작 및 특성 평가 (Fabrication and characteristic evaluation of microfluidics chip integrated OLED for the light sources)

  • 김영환;한진우;김종연;김병용;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.377-377
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    • 2007
  • A simplified integration process including packaging is presented, which enables the realization of the portable fluorescence detection system. A fluorescence detection microchip system consisting of an integrated PIN photodiode, an organic light emitting diode (OLED) as the light source, an interference filter, and a microchannel was developed. The on-chip fluorescence detector fabricated by poly(dimethylsiloxane) (PDMS)-based packaging had thin-film structure. A silicon-based integrated PIN photo diode combined with an optical filter removed the background noise, which was produced by an excitation source, on the same substrate. The active area of the finger-type PIN photo diode was extended to obtain a higher detection sensitivity of fluorescence. The sensitivity and the limit of detection (LOD S/N = 3) of the system were $0.198\;nA/{\mu}M$ and $10\;{\mu}M$, respectively.

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밭 토양으로부터 아질산(N2O기체의 배출량 측정과 배출특성 (N2O Emissions from Agricultural Soils and Their Characteristics)

  • 김득수;오진만
    • 한국대기환경학회지
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    • 제19권5호
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    • pp.529-540
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    • 2003
  • A closed chamber system was used for measuring $N_2$0 fluxes from an agriculturally managed upland soil in Kunsan during the growing season from May to July 2002. It is known that soil is one dominant source of atmospheric $N_2$O, contributing to about 57% (9 Tg y $^{-1}$ ) of the total annual global emission. Hence, its increasing emissions and concentrations are largely associated with agricultural activities. In order to elucidate characteristics of soil nitrogen emissions from intensively managed agricultural soils and to understand the roles of soil parameters (soil moisture, soil pH, soil temperature, and soil nitrogen) in the gas emission, $N_2$O soil emissions were measured at every hour during the experimental period (21 days). Soil $N_2$O fluxes were calculated based on changes of $N_2$O concentrations measured inside a closed chamber at every hour. The analysis of $N_2$O was made by using a Gas Chromatography (equipped with Electron Capture Detector). Soil parameters at sampling plots were also analyzed. Monthly averaged $N_2$O fluxes during May, June, and July were 0.14, 0.05, and 0.13 mg-$N_2$O m$^{-2}$ h$^{-1}$ , respectively. Soil temperature and soil pH did not significantly vary over the experimental period; soil temperatures ranged from 12∼$25^{\circ}C$, and soil pH ranged 4.56∼4.75. However, soil moisture varied significantly from 32% to 56% in WFPS. Relationships between soil parameters and $N_2$O fluxes exhibited positive linear relationships. Strong positive correlation ($R^2$ = 0.57, P< 0.0001) was found between $N_2$O flux and sil moisture. It suggests that soil moisture has affected strongly soil $N_2$O emissions during the experimental periods, while other parameters have remained relatively at constant levels. $N_2$O flux from agricultural soils was significant and should be taken account for the national emission inventory.

UHF FRS 대역 CMOS PLL 주파수 합성기 설계 (Design of a CMOS Frequency Synthesizer for FRS Band)

  • 이정진;김영식
    • 한국전자파학회논문지
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    • 제28권12호
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    • pp.941-947
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    • 2017
  • 본 논문에서는 $0.35{\mu}m$ CMOS 공정으로 FRS 대역 무전기용 반송파 신호를 쿼드러쳐(Quadrature) 형식으로 출력하는 Fractional-N 위상 고정루프(PLL) 주파수 합성기를 설계 및 제작하였다. 설계한 주파수 합성기의 주요 블록은 전압 제어 발진기(VCO), 전하 펌프(CP), 루프 필터(LF), 위상 주파수 검출기(PFD) 그리고 주파수 분주기이다. VCO는 우수한 위상잡음과 전력 특성을 얻을 수 있는 LC 공진 방식으로 설계했고, CP는 참조 주파수에 따라 펌핑 전류를 조절할 수 있도록 설계하였다. 주파수 분주기는 16분주의 전치 분주기와 3차 델타-시그마 모듈레이터($3^{rd}$ DSM) 방식의 Fractional-N 분주기로 설계하였다. LF는 외부의 3차 RC 루프 필터로 구성하였다. 측정결과, 주파수 합성기의 동작 주파수 영역은 최소 460 MHz에서 최대 510 MHz이고, 출력전력으로는 약 -3.86 dBm을 얻었다. 출력의 위상잡음은 100 Hz offset 주파수에서 -94.8 dBc/Hz이며 위상 루프 고착 시간은 약 $300{\mu}s$이다.