Browse > Article
http://dx.doi.org/10.4313/TEEM.2003.4.5.015

A Polycrystalline CdZnTe Film and Its X-ray Response Characteristics for Digital Radiography  

Kim, Jae-Hyung (School of Computer Aided Science, Inje University)
Park, Chang-Hee (School of Computer Aided Science, Inje University)
Kang, Sang-Sik (Department of Biomedical Engineering, Inje University)
Nam, Sang-Hee (Department of Biomedical Engineering, Inje University)
Publication Information
Transactions on Electrical and Electronic Materials / v.4, no.5, 2003 , pp. 15-18 More about this Journal
Abstract
The Cd$\_$1-x/Zn$\_$x/Te film was produced by thermal evaporation for the flat-panel X-ray detector. The crystal structure and the surface morphology of poly crystalline Cd$\_$1-x/Zn$\_$x/Te film were examined using XRD and SEM, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in a polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$\_$0.7/Zn$\_$0.3/Te thin film were measured to 0.3 1nA/$\textrm{cm}^2$ and 260 pC/$\textrm{cm}^2$ at an applied voltage of 2.5 V/$\mu\textrm{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$\_$1-x/Zn$\_$x/Te detectors reduced the leakage current and improved the X-ray sensitivity significantly. The leakage current was drastically diminished by the formation of thin parylene layer in the Cd$\_$0.7/Zn$\_$0.3/Te detector.
Keywords
CdZnTe detectors; Digital radiography; Leakage current; X-ray sensitivity; Parylene layer;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 A. Jahnke and R. Matz, 'Signal formation and decay in CdTe x-ray detectors under intense irradiation', Med. Phys., Vol. 26, No. 1, p. 38, 1999   DOI   ScienceOn
2 J. C. Erickson, H. W. Yao, R. B. James, H. Hermon, and M. Greaves, 'Time of flight experimental studies of CdZnTe radiation detectors', J. of Electronic Materials, Vol. 29, No. 6, p. 699, 2000   DOI
3 S. S. Kang, J. H. Kim, H. W. Lee, C. W. Mun, and S. H. Nam, 'X-ray response characteristic of Zn in the polycrystalline $Cd_{1-x}Zn_{x}Te$ detector for digital radiography', Trans. EEM, Vol. 3(2), p. 28, 2002
4 A. Cavallini, B. Fraboni, W. Dusi, M. Zanarini, and P. Siffert, 'Deep levels and compensation in $\gamma$ -irradiated CdZnTe', Appl. Phys. Lett., Vol. 77, No. 20, p. 3212, 2000   DOI   ScienceOn
5 S. Vedantham, G. C. Giakos, A. Dasgupta, B. Pillai, S. Chowdhury, and P. Ghotra, 'Electrical characterization of CdZnTe imaging detectors for digital radiography', SPIE, Vol. 3032, p. 499, 1997   DOI
6 A. A. Melnikov, 'CdZnTe radiation detectors', J. of Crystal Growth, Vol. 197, p. 663, 1999   DOI   ScienceOn
7 W. Que and J. A. Rowlands. 'X-ray imaging using amorphous selenium: inherent spatial resolution', Med. Phys., Vol. 22, No. 4, p. 365, 1995   DOI   ScienceOn
8 S. Tokuda, S. Adachi, T. Sato, T. Yoshimura, H. Nagata, K. Uehara, Y Izumi, O. Teranuma, and S. Yamada, 'Experimental evaluation of a novel CdZnTe flat panel X-ray detector for digital radiography and fluoroscopy', Proc. SPIE, Vol. 4320, p. 140, 2001   DOI
9 J. K. Park, S. S. Kang, J. H. Kim, C. W. Mun, and S. H. Nam, 'Zinc sulfide selenium x-ray detector for digital radiography, Trans. EEM, Vol. 3(4), p. 16, 2002
10 H. Hermon, M. Schieber, A. Zuck, A. Vilensky, L Melekhov, E. Shtekel, A. Green, O. Dagan, S. E. Ready, R. A. Street, E. S. Seppi, R. Pavlyuchkova, G. VirshuP, G. Zentai, and L. Partain, 'Deposition of thick films of polycrystalline mercuric iodide x-ray detectors', SPIE, Vol. 4320, p. 133, 2001   DOI
11 G. C. Giakos, S. Vedantham, S. Suryanarayanan, S. Chowdhury, R. Guntupalli, J. Odogba, V. VegaLozada, B. Pillai, and D.B. Sheffer, 'Image analysis of CdZnTe detectors for digital radiography', IEEE Instrumental and Measurement Technology Conference, p. 358, 1998
12 L. Verger, J. P. Bonnefoy, F. Glasser, and P. Overier Buffet, 'New developments in CdTe and CdZnTe detectors for x and $\gamma -ray applications', J. Electronic Materials, Vol. 26, No. 6, p. 738, 1997   DOI