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Fabrication of Optically Active Nanostructures for Nanoimprinting

  • Jang, Suk-Jin;Cho, Eun-Byurl;Park, Ji-Yun;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.393-393
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    • 2012
  • Optically active nanostructures such as subwavelength moth-eye antireflective structures or surface enhanced Raman spectroscopy (SERS) active structures have been demonstrated to provide the effective suppression of unwanted reflections as in subwavelength structure (SWS) or effective enhancement of selective signals as in SERS. While various nanopatterning techniques such as photolithography, electron-beam lithography, wafer level nanoimprinting lithography, and interference lithography can be employed to fabricate these nanostructures, roll-to-roll (R2R) nanoimprinting is gaining interests due to its low cost, continuous, and scalable process. R2R nanoimprinting requires a master to produce a stamp that can be wrapped around a quartz roller for repeated nanoimprinting process. Among many possibilities, two different types of mask can be employed to fabricate optically active nanostructures. One is self-assembled Au nanoparticles on Si substrate by depositing Au film with sputtering followed by annealing process. The other is monolayer silica particles dissolved in ethanol spread on the wafer by spin-coating method. The process is optimized by considering the density of Au and silica nano particles, depth and shape of the patterns. The depth of the pattern can be controlled with dry etch process using reactive ion etching (RIE) with the mixture of SF6 and CHF3. The resultant nanostructures are characterized for their reflectance using UV-Vis-NIR spectrophotometer (Agilent technology, Cary 5000) and for surface morphology using scanning electron microscope (SEM, JEOL JSM-7100F). Once optimized, these optically active nanostructures can be used to replicate with roll-to-roll process or soft lithography for various applications including displays, solar cells, and biosensors.

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Electrode formation using Light induced electroless plating in the crystalline silicon solar cells

  • 정명상;강민구;이정인;김동환;송희은
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.347.1-347.1
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    • 2016
  • Screen printing is commonly used to form the electrode for crystalline silicon solar cells. However, it has caused high resistance and low aspect ratio, resulting in decrease of conversion efficiency. Accordingly, Ni/Cu/Ag plating method could be applied for crystalline silicon solar cells to reduce contact resistance. For Ni/Cu/Ag plating, laser ablation process is required to remove anti-reflection layers prior to the plating process, but laser ablation results in surface damage and then decrease of open-circuit voltage and cell efficiency. Another issue with plating process is ghost plating. Ghost plating occurred in the non-metallized region, resulting from pin-hole in anti-reflection layer. In this paper, we investigated the effect of Ni/Cu/Ag plating on the electrical properties, compared to screen printing method. In addition, phosphoric acid layer was spin-coated prior to laser ablation to minimize emitter damage by the laser. Phosphorous elements in phosphoric acid generated selective emitter throughout emitter layer during laser process. Then, KOH treatment was applied to remove surface damage by laser. At this step, amorphous silicon formed by laser ablation was recrystallized during firing process and remaining of amorphous silicon was removed by KOH treatment. As a result, electrical properties as Jsc, FF and efficiency were improved, but Voc was lower than screen printed solar cells because Voc was decreased due to surface damage by laser process. Accordingly, we expect that efficiency of solar cells could be improved by optimization of the process to remove surface damage.

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Low-temperature solution-processed aluminum oxide layers for resistance random access memory on a flexible substrate

  • 신중원;조원주
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.257-257
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    • 2016
  • 최근에 메모리의 초고속화, 고집적화 및 초절전화가 요구되면서 resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), phase change RAM (PRAM)등과 같은 차세대 메모리 기술이 활발히 연구되고 있다. 다양한 메모리 중에서 특히 resistive random access memory (ReRAM)는 빠른 동작 속도, 낮은 동작 전압, 대용량화와 비휘발성 등의 장점을 가진다. ReRAM 소자는 절연막의 저항 스위칭(resistance switching) 현상을 이용하여 동작하기 때문에 SiOx, AlOx, TaOx, ZrOx, NiOx, TiOx, 그리고 HfOx 등과 같은 금속 산화물에 대한 연구들이 활발하게 이루어지고 있다. 이와 같이 다양한 산화물 중에서 AlOx는 ReRAM의 절연막으로 적용되었을 때, 우수한 저항변화특성과 안정성을 가진다. 하지만, AlOx 박막을 형성하기 위하여 기존에 많이 사용되어지던 PVD (physical vapour deposition) 또는 CVD (chemical vapour deposition) 방법에서는 두께가 균일하고 막질이 우수한 박막을 얻을 수 있지만 고가의 진공장비 사용 및 대면적 공정이 곤란하다는 문제점이 있다. 한편, 용액 공정 방법은 공정과정이 간단하여 경제적이고 대면적화가 가능하며 저온에서 공정이 이루어지는 장점으로 많은 관심을 받고 있다. 본 연구에서는 sputtering 방법과 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서 메모리 특성을 비교 및 평가하였다. 먼저, p-type Si 기판 위에 습식산화를 통하여 SiO2 300 nm를 성장시킨 후, electron beam evaporation으로 하부 전극을 형성하기 위하여 Ti와 Pt를 각각 10 nm와 100 nm의 두께로 증착하였다. 이후, 제작된 AlOx 용액을 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30 초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였고, 상부 전극을 형성하기 위해 shadow mask를 이용하여 각각 50 nm, 100 nm 두께의 Ti와 Al을 electron beam evaporation 방법으로 증착하였다. 측정 결과, 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서는 기존의 sputtering 방법으로 제작된 ReRAM에 비해서 저항 분포가 균일하지는 않았지만, 103 cycle 이상의 우수한 endurance 특성을 나타냈다. 또한, 1 V 내외로 동작 전압이 낮았으며 104 초 동안의 retention 측정에서도 메모리 특성이 일정하게 유지되었다. 결론적으로, 간단한 용액 공정 방법은 ReRAM 소자 제작에 많이 이용될 것으로 기대된다.

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극장판 애니메이션의 엔딩 크레딧 양상연구: 쿠키 영상을 중심으로 (A Study of Ending Credit in Animations-Focused on Credit Cookie)

  • 박성원;이혜원
    • Journal of Information Technology Applications and Management
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    • 제27권1호
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    • pp.187-198
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    • 2020
  • With the development of technology and the creation of an entertainment environment for leisure, various marketing strategies are being used in the film industry. Among them, the use of the credit cookie of ending credits was very effective in producing the series. The ending credit is the time it takes to show the names of the people who made the movie, which is meaningless to the audience. There is a cost to produce a ending credit but It wasn't made because no revenue was generated. The credit cookie was inserted into this ending credit area, which brought new pleasure to the audience. Most of them were epilogue images showing the story behind the movie, NG images showing the NG situation during film production, and In videos mentioned in the movie but not shown in the movie itself. As various ideas about credit cookie were connected with marketing, a series movie and a spin-off foretelling the derivative works after the screening work were produced and have a new meaning. As a result, the time of ending credits, which had no commercial value, became the methodology of the most powerful promotional strategy. Looking at the difference between live-action film and animation in producing such credit cookie, unlike live-action films that edit the remaining parts after shooting, the NG video of the animation has a lot of time and money to produce. So, it hasn't try very well, and it seems to have been actively produced when moving from 2D animation to 3D animation. This is because 3D animation, which has already been modeled, can create new NG scenes by simply adding animating based on the layout of the created scene. Since it is possible to produce an episode movie at a low cost and time, and to use the scenes of the movie after the production, it will be necessary to strategically produce credit cookie for promotion in animation.

NiO/YSZ/Pt 전해셀의 고온 수증기 전해에 의한 수소제조 특성 (Hydrogen Production by the High Temperature Steam Electrolysis of NiO/YSZ/Pt Cell)

  • 유지행;김영운;이시우;서두원;홍기석;한인섭;우상국
    • 한국수소및신에너지학회논문집
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    • 제17권1호
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    • pp.62-68
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    • 2006
  • High temperature electrolysis is a promising technology to produce massively hydrogen using renewable and nuclear energy. Solid oxide fuel cell materials are candidates as the components of steam electrolysers. However, the polarization characteristics of the typical electrode materials during the electrolysis have not been intensively investigated. In this study, NiO electrode was deposited on YSZ electrolyte by spin coat process and firing at $1300^{\circ}C$. Pt electrode was applied on the other side of the electrolyte to compare the polarization characteristics with those by NiO during electrolysis. The $H_2$ evolution rate was also monitored by measuring the electromotive force of Lambda probe and calculated by thermodynamic consideration. At low current density, Pt showed lower cathodic polarization and thus higher current efficiency than Ni, but the oxidation of Ni into NiO caused the increase of anodic resistance with increasing current density. High overpotential induced high power consumption to produce hydrogen by electrolysis.

무전해 식각법으로 합성한 Si 나노와이어 Field Effect Transistor 유연소자의 특성 (Electrical Properties of Flexible Field Effect Transistor Devices Composed of Si Nanowire by Electroless Etching Method)

  • 이상훈;문경주;황성환;이태일;명재민
    • 한국재료학회지
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    • 제21권2호
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    • pp.115-119
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    • 2011
  • Si Nanowire (NW) field effect transistors (FETs) were fabricated on hard Si and flexible polyimide (PI) substrates, and their electrical characteristics were compared. Si NWs used as channels were synthesized by electroless etching method at low temperature, and these NWs were refined using a centrifugation method to get the NWs to have an optimal diameter and length for FETs. The gate insulator was poly(4-vinylphenol) (PVP), prepared using a spin-coating method on the PI substrate. Gold was used as electrodes whose gap was 8 ${\mu}m$. These gold electrodes were deposited using a thermal evaporator. Current-voltage (I-V) characteristics of the device were measured using a semiconductor analyzer, HP-4145B. The electrical properties of the device were characterized through hole mobility, $I_{on}/I_{off}$ ratio and threshold voltage. The results showed that the electrical properties of the TFTs on PVP were similar to those of TFTs on $SiO_2$. The bending durability of SiNWs TFTs on PI substrate was also studied with increasing bending times. The results showed that the electrical properties were maintained until the sample was folded about 500 times. But, after more than 1000 bending tests, drain current showed a rapid decrease due to the defects caused by the roughness of the surface of the Si NWs and mismatches of the Si NWs with electrodes.

금속유기분해법으로 제조한 니켈 망가나이트 박막의 구조적 특성 (Structural Properties of Nickel Manganite Thin Films Fabricated by Metal Organic Decomposition)

  • 이귀웅;전창준;정영훈;윤지선;남중희;조정호;백종후;윤종원
    • 한국전기전자재료학회논문지
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    • 제27권4호
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    • pp.226-231
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    • 2014
  • Thin thermistor films of solutions with nickel and manganese oxides were prepared by metal-organic decomposition (MOD). The structural properties of the thin films were investigated as a function of annealing temperature. Field emission scanning electron microscope (FE-SEM) results indicated that the thin films had a thin thickness, smooth and dense surface. The crystallization temperature of $414.9^{\circ}C$ was confirmed from thermogavimetric-differential thermal analysis (TG-DTA) curve. A single phase of cubic spinel structure was obtained for the thin film annealed from $700^{\circ}C$ to $800^{\circ}C$, which was confirmed from the X-ray diffraction (XRD). From the selected area electron diffraction (SAED) in high resolution transmission electron microscope (HRTEM), the nano grains (2~3 nm) of spinel phase with (311) and (222) planes were detected for the thin film annealed at $500^{\circ}C$, which could be applicable to read-out integrated circuit (ROIC) substrate of the uncooled microbolometer with low processing temperature.

MOD법으로 제조된 Copper Manganite 박막의 구조 및 NTCR 특성 (Micro-structure and NTCR Characteristics of Copper Manganite Thin Films Fabricated by MOD Process)

  • 이귀웅;전창준;정영훈;윤지선;남중희;조정호;백종후;윤종원
    • 한국전기전자재료학회논문지
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    • 제27권7호
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    • pp.452-457
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    • 2014
  • Copper manganite thin films were fabricated on $SiN_x/Si$ substrate by metal organic decomposition (MOD) process. They were burned-out at $400^{\circ}C$ and annealed at various temperatures ($400{\sim}800^{\circ}C$) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganite film with a cubic spinel structure was well developed at $500^{\circ}C$ which confirmed by XRD and HRTEM analysis. It showed a low resistivity ($47.5{\Omega}{\cdot}cm$) at room temperature and high NTCR characteristics of $-4.12%/^{\circ}C$ and $-2.15%/^{\circ}C$ at room temperature and $85^{\circ}C$, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to $600^{\circ}C$. However, the appearance of secondary phase at temperatures higher than $600^{\circ}C$ lead to deteriorate the NTCR characteristics.

A new approach to quantify paraquat intoxication from postmortem blood sample by using 1H qNMR method

  • Hong, Ran Seon;Cho, Hwang Eui;Kim, Dong Woo;Woo, Sang Hee;Choe, Sanggil;Kim, Suncheun;Hong, Jin Tae;Moon, Dong Cheul
    • 한국자기공명학회논문지
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    • 제17권1호
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    • pp.40-46
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    • 2013
  • For a case study of suspected paraquat intoxication, we developed a simple and rapid method of $^1H$ qNMR to determine the mili-molar amount of paraquat in postmortem blood samples. There were no interfering signals from endogenous compounds in the chemical shift of paraquat and diquat (internal standard). The amount of sample used ranged from 0.25 mM to 10.0 mM. Diquat, which has similar physicochemical properties with paraquat, was chosen as an internal standard. The NMR experimental conditions, relaxation delay time and CPMG spin-echo pulse sequence were optimized. The developed method was validated in terms of specificity, accuracy, precision, matrix effect, recovery, limit of detection (LOD), and low limit of quantification (LLOQ). The proposed qNMR method provided a simple and rapid assay for the identification and quantification of the quaternary ammonium herbicide, "paraquat" in postmortem blood samples. This method was tested by using the blood from the heart of a man who was intoxicated with paraquat. In this particular case, the level of paraquat was 1.07 mM in the blood. For the determination of quaternary ammonium herbicides, qNMR could also be used to provide a better understanding of the currently available techniques.

SrTiO$_3$/(MgO/)Al$_2O_3$(1120) 위에 쌍에피택셜하게 성장한 Y$_1Ba_2Cu_3O_{7-x}$와 La$_{0.2}Sr_{0.8}MnO_3$ 박막의 조셉슨 및 자기저항 특성연구 (Josephson Property and Magnetoresistance in Y$_1Ba_2Cu_3O_{7-x}$ and La$_{0.2}Sr_{0.8}MnO_3$ Films on Biepitaxial SrTiO$_3$/(MgO/)Al$_2O_3$(1120))

  • 이상석;황도근
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.185-188
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    • 1999
  • Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

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