• Title/Summary/Keyword: Low-spin

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A Study on Formation of Vertically Aligned ZnO Nanorods Arrays on a Rough FTO Transparent Electrode by the Introduction of TiO2 Crystalline Nano-sol Blocking Interlayer (결정성 이산화티탄 나노졸 블록킹층 도입을 통한 거친 표면을 가지는 FTO 투명전극기판 위 수직 배향된 산화아연 나노막대 형성에 관한 연구)

  • Heo, Jin Hyuck;You, Myung Sang;Im, Sang Hyuk
    • Korean Chemical Engineering Research
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    • v.51 no.6
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    • pp.774-779
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    • 2013
  • We synthesized the solution processible monodispersed $TiO_2$ crystalline nano-sol with ~ 5 nm in size by sol-gel method. Through the spin-coating of crystalline $TiO_2$ nano-sol at low processing temperature, we could make even blocking interlayer on the rough FTO transparent electrode substrate. The rough FTO surface could be gradually smoothed by the spin-coating of nano-crystalline $TiO_2$ sol based blocking interlayer. The 1, 2.5, 5, and 10 wt% of nanocrystalline $TiO_2$ sol formed 29, 38, 62, and 226 nm-thick of blocking interlayer in present experimental condition, respectively. The 5 and 10 wt% of $TiO_2$ nano-sol could effectively fill up the valley part of bare FTO with 48.7 nm of rms (root mean square) roughness and consequently enabled the ZnO to be grown to vertically aligned one dimensional nanorods on the flattened blocking interlayer/FTO substrate.

First Principles Calculations on Electronic Structure and Magnetism of Transition Metal Doped ZnO (전이금속이 도핑된 ZnO의 전자구조와 자성에 대한 제일원리계산)

  • Yun, Sun-Young;Cha, Gi-Beom;Hong, Sun-C.
    • Journal of the Korean Magnetics Society
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    • v.15 no.1
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    • pp.1-6
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    • 2005
  • In this study we investigate the electronic structure and magnetism of transition metal (TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag ) deped ZnO($TM_{0.25}Zn_{0.75}O$), which are expected to have Curie temperature. Full-potential Linearized Augmented Plane Wave(FLAPW) metod is adopted with exchange-correlation potential expressed as general gradient approximation(GGA). The calculated magnetic moments of ($TM_{0.25}Zn_{0.75}O$) are 0.83, 3.03, 4.03, 3.48, 2.47, 1.56, 0.43, 0.75, 0.01 ${\mu}_B$ for TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag, respectively. The nearest neighbor O atom to the transition metal is calculated to have a significant magnetic moment of about 0.1${\mu}_B$, ?? 새 strong hybridization between O-p and TM-d bands. As the results, the systems may have larger magnetic moments in total, compared to the corresponding isolated atoms. The 3d TM doped systems exhibit the half-metallic character except Co, wheres the 4d TM doped systems behave like normal metals and low spin polarization at the Fermi levels.

전자파의 신경계통에 대한 영향

  • 이근호
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.8 no.2
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    • pp.37-55
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    • 1997
  • 최근 선진국가들에서는 전자파 장애 증후군에 관심이 집중되고 있는데, 전자파에 장기 노출 되는 인구에서 뇌암이나 유방암, 백혈병 등의 발생률이 높다는 보고(Kolmodin-Hedman 등, 1988 ; Demers등, 1991)가 있어서 전자제품의 생산업체는 물론이고 사용자에 대해서도 불안한 관심사가 되 어 있다. 전자파가 생체에 미치는 영향은 열적 효과와 비열적 효과에 의한 것으로 구분된다. Microwave는 약 300MHz에서 300GHz 사이(파장 1m에서 1mm사이)의 주파수를 가지는 전자파로서 이온의 운동이나 쌍극자분자(dipole molecule)들을 진동시키므로서 조직에 열이 발생한다. 열이 과도하게 발생하면 세포 단백질이 응고하게 되는 등 일반적으로 생각할 수 있는 고열로 인한 여러 가지 유해환경이 조직 에 조성될 수 있다. 실제로 고전압의 전자파에 노출된 안구의 수정체에 백내장 등의 병변이 발생한 것 으로 보고된 바 있다(Adey,1981). 일반적으로 전자파의 생체에 대한 작용으로는 이렇듯 조직에 흡수 되는 전자파의 에너지에 의한 열작용이 지배적인 것으로 생각되어 왔다. 그러나 초저주파역대(Extre- mely low frequency, EMF)의 변조 및 펄스파 등의 영향에 관해서도 조직의 온도상승으로는 설명할 수 없는 현상이 보고된 바 있다. 이러한 비열적 효과가 신경계에 끼치는 영향에 대해서는 혈액뇌관문 의 투과성 변화(Oscar와 Hawkins, 1977), 뇌종양 발생, 칼슘대사 이상 및 신경전달물질에 대한 영향 등이 주장(Anderson, 1993)되고 있으나 아직 그 분명한 기전이 밝혀져 있지 않은 상태이다. 또한 그 영향의 평가에 서도 일정한 기준이나 지표가 정해지지 않은 실정이다. 그러므로 신경계에 대한 대체적인 소개와 더불어 전자기파의 영향에 대한 이제까지의 보고를 종합 하고 향후 연구의 방향을 소개하고자 한다.> 이온이 공동 첨가제로 더 적합하다.u(30 .angs. )/CoFe(35 .angs. )/NiO(800 .angs. ) 구조를 갖는 spin-valve 박막은 극대 MR비 6.3%, 유효자기장감응도 약 0.5(%/Oe)를 보여 spin-valve head 재료로 적합함을 알 수 있었다.다.다.다.는 각각 148 meV .angs. $^{2}$, 103.8 meV .angs. $^{2}$와 1.77 * $10^{-6}$ erg/cm, 0.67 * $10^{-6}$ erg/cm 였다.다.자 노인들을 영주권자와 귀화 시민권자의 구분없이 하나의 집단으로 간주하고 분석해 왔던 것을 볼 때, 앞으로의 연구는 이론적으로나 방법론적으로 시민권의 유무가 주거형태에 끼치는 영향도 함께 고려해야 할 것이다.에 나타난 인도의 영향은 여성복식과 남성복식에 있어서 서로 유사점과 차이점이 보이는데, 인도의 영향이 여성복식에 있어서 그 빈도가 더 높고, 종류가 더 다양함을 볼 수 있다. 여성복식에 있어서는 12가지의 다양한 인도복식스타일이 나타났으며, 그중 가장 많이 보이는 스타일은 Indian Shirt/Blouse/Smock/ Dress이며, 그 뒤를 이어 Madras, Indian lowery등을 볼 수 있다. 남성복식애 나타난 7가지의 스타일 중에는 Madras가 가장 빈도가 높으며 그외의 스타일들은 그 빈도가 매우 낮음을 볼 수 있다. 인도의 영향의 정도 (Attribution Categories) 있어서는 여성과 남성복식 모두에 있어서 인도에서 직접 수입된(originated) item이 각각 전체의 90%와 81%를 차지하여, 인도복식의 영향은 받았으나 미국내에서 제작된(attributed and connotated) item 보다 휠씬 더 많은 수를 보였다. 인도복식스타일이 가장

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Soft Magnetoresistive Properties of Conetic Thin Film Depending on Ta Buffer Layer (버퍼층 Ta에 의존하는 코네틱 박막의 연자성 자기저항 특성)

  • Choi, Jong-Gu;Hwang, Do-Guwn;Lee, Sang-Suk;Choi, Jin-Hyub;Lee, Ky-Am;Rhee, Jang-Rho
    • Journal of the Korean Magnetics Society
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    • v.19 no.6
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    • pp.197-202
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    • 2009
  • The property of soft magnetism for the Corning glass/non-buffer or buffer Ta/Conetic(NiFeCuMo)/Ta prepared by the ion beam deposition sputtering was studied. The effect of crystal property and post annealing treatment depending on the thickness of Conetic thin films was investigated. The coercivities of Conetic thin films with easy and hard direction along to the applying magnetic field during deposition were compared with each other. The coercivity and magnetic susceptibility of Ta(5 nm)/Conetic(50 nm) thin film were 0.12 Oe and 1.2 ${\times}\;10^4$, respectively. From these results, firstly, the Conetic thin film was more soft magnetism thin film than other one such as permalloy NiFe. Secondly, the usage of soft magnetism Conetic thin film for GMR-SV (giant magneoresistance-spin valve) or MTJ (Megnetic Tunnel Junction) structure in a low magnetic field can be possible.

Synthesis and Spectroscopic Characterization of Manganese(II), Iron(III) and Cobalt(III) Complexes of Macrocyclic Ligand. Potential of Cobalt(III) Complex in Biological Activity

  • El-Tabl, Abdou S.;Shakdofa, Mohamad M.E.;El-Seidy, Ahmed M.A.
    • Journal of the Korean Chemical Society
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    • v.55 no.6
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    • pp.919-925
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    • 2011
  • A new series of manganese(II), iron(III) and cobalt(III) complexes of 14-membered macrocyclic ligand, (3,6,10,13,16,19-hexaazabicyclo[6.6.6]icosane-1,8-diamine) have been prepared and characterized by elemental analyses, IR, UV-VIS, $^1H$- and $^{13}C$- NMR spectra, magnetic susceptibilities, conductivities, and ESR measurements. Molar conductance measurements in DMF solution indicate that the complexes are electrolytes. The ESR spectrum for cobalt(III) complex in $CD_3OD+10%D_2O$ after exposure to $^{60}Co-{\gamma}$-rays at 77 K using a 0.2217 M rad $h^{-1}$ vicrad source showed $g_{\perp}$ > $g_{\parallel}$ > $g_e$, indicating that, the unpaired electron site is mainly present in the $d_z2$ orbital with covalent bond character. In this case, the ligand hyperfine tensors are nearly collinear with ${\gamma}$-tensors, so there is no major tendency to bend. Therefore, little extra delocalization via the ring lobe of the $dz^2$ orbital occurs. However, the ESR spectrum in solid state after exposure to $^{60}Co-{\gamma}$-rays at 77 K showed $g_{\parallel}$ > $g_{\perp}$ > $g_e$, indicating that, the unpaired electron site is mainly present in the $d_x2_{-y}2$ ground state as the resulting spectrum contains a large number of randomly oriented molecules provided that, the principle directions of g and A tensors. Manganese (II) complex 2, $[H_{12}LMn]Cl_4.2H_2O$, showed six isotropic lines characteristic to an unpaired electron interacting with a nucleus of spin 5/2, however, iron(III) complex 3, $[H_{12}LFe]Cl_5.H_2O$, showed spectrum of a high spin $^{57}Fe$ (I=1/2), $d^5$ configuration. The geometry of these complexes was supported by elemental analyses, IR, electronic and ESR spectral studies. Complex 1 showed exploitation in reducing the amount of electron adducts formed in DNA during irradiation with low radiation products.

Half-metallicity and Magnetism of Co2ZrSi/ZnTe(001) Interface: A First-principles Study (Co2ZrSi/ZnTe(001)계면의 자성과 반쪽금속성에 대한 제일원리 연구)

  • Jin, Y.J.;Lee, J.I.
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.147-151
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    • 2007
  • We have investigated the half-metallicity and magnetism for the Heusler ferromagnet $Co_2$ZrSi interfaced with semiconductor ZnTe along the (001) plane by using the full-potential linearized augmented plane wave (FLAPW) method. We considered low types of possible interfaces: ZrSi/Zn, ZrSi/Te, Co/Zn, and Co/Te, respectively. From the calculated density of states, it was found that the half-metallicity was lost at all the interfaces, however for the Co/Te system the value of minority spin density of states was close to zero at the Fermi level. These facts are due to the interface states, appeared in the minority spin gap in bulk $Co_2$ZrSi, caused by the changes of the coordination and symmetry and the hybridizations between the interface atoms. At the Co/Te interface, the magnetic moments of Co atoms are 0.68 and $0.78{\mu}_B$ for the "bridge" and "antibridge" sites, respectively, which are much reduced with respect to that ($1.15{\mu}_B$) of the bulk $Co_2$ZrSi. In the case of Co/Zn, Co atoms at the "bridge" and "antibridge" sites have magnetic moments of 1.16 and $0.93{\mu}_B$, respectively, which are almost same or slightly decreased compared to that of the bulk $Co_2$ZrSi. On the other hand, for the ZrSi/Zn and ZrSi/Te systems, the magnetic moments of Co atoms at the sub-interface layers are in the range of $1.13{\sim}1.30\;{\mu}_B$, which are almost same or slightly increased than that of the bulk $Co_2$ZrSi.

A topological metal at the surface of an ultrathin BiSb alloy film

  • Hirahara, T.;Sakamoto, Y.;Saisyu, Y.;Miyazaki, H.;Kimura, S.;Okuda, T.;Matsuda, I.;Murakami, S.;Hasegawa, S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.14-15
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    • 2010
  • Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

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Metabolic Imbalance between Glycolysis and Mitochondrial Respiration Induced by Low Temperature in Rice Plants (벼 냉해의 초기 기작으로서 생체막과 세포질 사이의 대사 불균형)

  • Lee, Keun-Pyo;Boo, Yong-Chool;Jung, Jin
    • Applied Biological Chemistry
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    • v.43 no.4
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    • pp.236-240
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    • 2000
  • Correlations between mitochondrial respiration, glycolysis activity and overall growth activity of rice (Oryza sativa: cv. Dasan) seedlings during low temperature exposure were studied in order to provide insights into the underlying mechanism for the primary phase of chilling injury in plants. Among cellular membranes involved in energy metabolism, only the mitochondrial inner membrane showed not only physical phase transition at ca. $13^{\circ}C$, as monitored by ESR spin label, but also functional phase transition at the same temperature, as assessed by cytochrome c oxidase activity. The main regulatory enzyme of glycolysis, phosphofructokinase, in situ did not suffer phase transition of its activity at least in the $4{\sim}27^{\circ}C$ range. Low temperature caused a significant accumulation of glucose 6-phosphate (G6P) and fructose 6-phosphate (F6P), which disappeared almost completely on rewarming of the seedlings. Temperature profiles of the steady state levels of G6P and F6P revealed the inflection point appearing at around phase transition temperature of the mitochondrial membrane. The results conform to our previous proposition on the mechanism for the early stage events of chilling injury that the accumulation of glycolytic metabolites in cells due to metabolic imbalance at low temperature gives rise to an excess supply of electrons during rewarming period, which, in turn, results in overproduction of active oxygen in mitochondria.

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The Low-field Tunnel-type Magnetoresistance Characteristics of Thin Films Deposited on Different Substrate (기판 효과에 따른 저 자장 영역에서의 자기저항 효과에 관한 연구)

  • Lee, Hi-Min;Shim, In-Bo;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.12 no.2
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    • pp.41-45
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    • 2002
  • The low-field tunnel-type magnetoresistance (MR) properties of sol-gel derived $La_{0.7}Pb_{0.3}MnO_3(LPMO)$ thin film deposited on different substrate have been investigated. Polycrystalline thin films were fabricated by spin-coating on $SiO_2/Si(100)$ substrate and that with yttria-stabilized zirconia (YSZ) buffer layer, while c-axis-oriented thim film was grown on $LaAlO_3(001)$ (LAO) single crystal substrate. The full width half maximum (FWHM) of the rocking curve scan of LPMO/LAO film is $0.32^{\circ}$. Tunnel-type MR ratio is 0.52 % in $LPMO/SiO_2/Si$(100) film and that of $LPMO/YSZ/SiO_2/Si$(100) film is as high as 0.68 %, whereas that of LPMO/LAO(001) film is less than 0.4 % under the applied field of 500 Oe at 300 K. Well-pronounced MR hysteresis was registered with an MR peak in the vicinity of the coercive field. The low-field tunnel-type MR characteristics of thin films deposited on different substrates originates from the behavior of grain boundary properties.

High-resolution Spiral-scan Imaging at 3 Tesla MRI (3.0 Tesla 자기공명영상시스템에서 고 해상도 나선주사영상)

  • Kim, P.K.;Lim, J.W.;Kang, S.W.;Cho, S.H.;Jeon, S.Y.;Lim, H.J.;Park, H.C.;Oh, S.J.;Lee, H.K.;Ahn, C.B.
    • Investigative Magnetic Resonance Imaging
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    • v.10 no.2
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    • pp.108-116
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    • 2006
  • Purpose : High-resolution spiral-scan imaging is performed at 3 Tesla MRI system. Since the gradient waveforms for the spiral-scan imaging have lower slopes than those for the Echo Planar Imaging (EPI), they can be implemented with the gradient systems having lower slew rates. The spiral-scan imaging also involves less eddy currents due to the smooth gradient waveforms. The spiral-scan imaging method does not suffer from high specific absorption rate (SAR), which is one of the main obstacles in high field imaging for rf echo-based fast imaging methods such as fast spin echo techniques. Thus, the spiral-scan imaging has a great potential for the high-speed imaging in high magnetic fields. In this paper, we presented various high-resolution images obtained by the spiral-scan methods at 3T MRI system for various applications. Materials and Methods : High-resolution spiral-scan imaging technique is implemented at 3T whole body MRI system. An efficient and fast higher-order shimming technique is developed to reduce the inhomogeneity, and the single-shot and interleaved spiral-scan imaging methods are developed. Spin-echo and gradient-echo based spiral-scan imaging methods are implemented, and image contrast and signal-tonoise ratio are controlled by the echo time, repetition time, and the rf flip angles. Results : Spiral-scan images having various resolutions are obtained at 3T MRI system. Since the absolute magnitude of the inhomogeneity is increasing in higher magnetic fields, higher order shimming to reduce the inhomogeneity becomes more important. A fast shimming technique in which axial, sagittal, and coronal sectional inhomogeneity maps are obtained in one scan is developed, and the shimming method based on the analysis of spherical harmonics of the inhomogeneity map is applied. For phantom and invivo head imaging, image matrix size of about $100{\times}100$ is obtained by a single-shot spiral-scan imaging, and a matrix size of $256{\times}256$ is obtained by the interleaved spiral-scan imaging with the number of interleaves of from 6 to 12. Conclusion : High field imaging becomes increasingly important due to the improved signal-to-noise ratio, larger spectral separation, and the higher BOLD-based contrast. The increasing SAR is, however, a limiting factor in high field imaging. Since the spiral-scan imaging has a very low SAR, and lower hardware requirements for the implementation of the technique compared to EPI, it is suitable for a rapid imaging in high fields. In this paper, the spiral-scan imaging with various resolutions from $100{\times}100$ to $256{\times}256$ by controlling the number of interleaves are developed for the high-speed imaging in high magnetic fields.

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