• Title/Summary/Keyword: Low-pressure plasma

Search Result 481, Processing Time 0.036 seconds

Low-Pressure Plasma Inactivation of Escherichia coli (감압 플라즈마를 이용한 Escherichia coli 살균)

  • Mok, Chulkyoon;Song, Dong-Myung
    • Food Engineering Progress
    • /
    • v.14 no.3
    • /
    • pp.202-207
    • /
    • 2010
  • Low-pressure plasmas (LPPs) were generated with different gases such as air, oxygen and nitrogen, and their inactivation effects against Escherichia coli were compared in order to evaluate the potential as a non-thermal microbial disinfection technology. Homogeneous plasmas were generated under low pressure below 1 Torr at gas flow rate of 350 mL/min regardless the types of gases. Temperature increases by LPPs were not detrimental showing less than ${10^{\circ}C}$ and ${25^{\circ}C}$ increases after 5 and 10 min treatments, respectively. The smallest temperature increase was observed with air LPP, and followed by oxygen and nitrogen LPPs. More than 5 log reduction in E. coli was achieved by 5 min LPP treatment but the destruction effect was retarded afterward. The LPP inactivation was represented by a iphasic first order reaction kinetics. The highest inactivation rate constant was achieved in air LPP and followed by oxygen and nitrogen LPPs. The small D-values of the LPP also supported its potentialities as a non-thermal food surface disinfection technology in addition to the substantial microbial reduction of more than 5 logs.

Effects of Extrusion Pressure and Feed Ingredient Particle Size on Growth Performance in Olive Flounder Paralichthys olivaceus (익스트루전 압력과 사료원료의 입자크기를 조절한 배합사료가 치어기 넙치 (Paralichthys olivaceus)의 성장에 미치는 영향)

  • Cho, Jeong-Hyeon;Lee, Bong-Joo;Hur, Sang-Woo;Lee, Seunghyung;Kim, Kang-Woong;Lim, Sang-Gu;Son, Maeng-Hyun
    • Korean Journal of Fisheries and Aquatic Sciences
    • /
    • v.52 no.3
    • /
    • pp.247-255
    • /
    • 2019
  • This study was conducted to investigate the effects of extrusion pressure and particle size of feed ingredients on the growth performance and plasma hormone activity in juvenile olive flounder Paralichthys olivaceus. Experimental diets were prepared with extrusion pressure manipulated by screw speed [low pressure (LP), 885 rpm/min; high pressure (HP), 708 rpm/min] and different dietary particle sizes [specific surface area: small (SS), $169.9m^2/kg$; large (LS), $67.4m^2/kg$] in a two-level factorial design. Four experimental diets (LP+SS, LP+LS, HP+SS, and HP+LS) were randomly assigned to 12 tanks (3 replicates) stocked with 20 fish (initial weight, 57 g) per tank. After a 4-week feeding trial, the observable trends of the main effects of extrusion pressure and particle size on growth performance showed that LP and SS enhanced fish weight gain. The plasma insulin-like growth factor-I level was significantly higher in fish fed the LP+SS diet than in fish fed the HP+SS diet. These results indicate that manipulation of the physical qualities of feed through adjustment of extrusion pressure and feed ingredient particle size may influence the growth performance of juvenile olive flounder, which should be considered in feed manufacture.

Plasma-immersion ion Deposition of Hydrogenated Diamond-like Carbon Films on Dielectric Substrates

  • Kon;Chun, Hui-Gon;Cho, Tong-Yul;Nikolay S. Sochugov;You, Yong-Zoo
    • Journal of Korean Vacuum Science & Technology
    • /
    • v.6 no.4
    • /
    • pp.143-148
    • /
    • 2002
  • Method of plasma-immersion ion deposition of hydrogenated DLC films on relatively thick flat dielectric substrates from plasma of not-self-sustained low-pressure gas arc discharge is suggested. Coating properties have been investigated experimentally, average energy Per a deposited carbon atom depending on discharge current has been calculated. Optimum deposition parameters lot obtaining sufficiently hard and transparent high-adhesive a-C:H films on a 4-mm thick glass substrates have been determined. Possibility to use these coatings for photo-tools protection from abrasion wear at low operating loads is shown in general.

  • PDF

Etching characteristics of ZnS:Mn thin films using $BCl_3/Ar$ high density plasma ($BCl_3/Ar$ 고밀도 플라즈마를 이용한 ZnS:Mn 박막의 식각 특성)

  • Kim, Gwan-Ha;Kim, Chang-Il;Lee, Cheol-In;Kim, Tae-Hyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.11a
    • /
    • pp.124-125
    • /
    • 2005
  • ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

  • PDF

Study of I layer deposition parameters of deposited micro-crystalline silicon by PECVD at 27.12MHz (27.12MHz PECVD에 의해 증착된 uc-Si의 I층 공정 파라미터 연구)

  • Lee, Kise;Kim, Sunkue;Kim, Sunyoung;Kim, Sangho;Kim, Gunsung;Kim, Beomjoon
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2010.06a
    • /
    • pp.66.1-66.1
    • /
    • 2010
  • Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

  • PDF

GROWTH OF CARBON NANOTUBES ON GLASS BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (마이크로웨이브 플라즈마 화학기상증착장비를 사용한 유리기판상의 탄소나노튜브의 합성)

  • Lee, Jae-Hyeoung;Choi, Sung-Hun;Choi, Won-Seok;Hong, Byung-You;Kim, Jeong-Tae;Lim, Dong-Gun;Yang, Kea-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.11a
    • /
    • pp.99-100
    • /
    • 2005
  • We have grown carbon nanotubes (CNTs) with a microwave plasma chemical vapor deposition (MPECVD) method, which has been regard as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. We use methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 60 nm thick Ni catalytic layer were deposited on the TiN coated glass substrate by RF magnetron sputtering method. In this work, we report the effects of pressure on the growth of CNTs. We have changed pressure of processing (10 $\sim$ 20 Torr) deposition of CNTs. SEM (Scanning electron microscopy) images show diameter, length and cross section state CNTs.

  • PDF

Fabrication of Ultrathin Silicon Oxide Layer by Low Pressure Rapid Thermal Oxidation and Remote Plasma Oxidation (저압급속열산화법과 플라즈마확산산화법에 의한 실리콘 산화박막의 제조)

  • Ko, Cheon Kwang;Lee, Won Gyu
    • Korean Chemical Engineering Research
    • /
    • v.46 no.2
    • /
    • pp.408-413
    • /
    • 2008
  • In this work, the use of LPRTO (low pressure rapid thermal oxidation) and remote plasma oxidation was evaluated for the preparation of ultra thin silicon oxide layer with less than 5 nm. The silicon oxide thickness grown by LPRTO was rapidly increased and saturated. The maximum thickness could be controlled at about 5 nm. As RF power and oxygen flow rate at a remote plasma oxidation increased, the behavior of oxide growth was almost the same as that of LPRTO. The oxide thickness of 4 nm was the maximum obtained by a remote plasma oxidation in this work. The quality of silicon oxide grown by LPRTO was comparable to the thermally grown conventional oxide.

Low-temperature synthesis of nc-Si/a-SiNx: H quantum dot thin films using RF/UHF high density PECVD plasmas

  • Yin, Yongyi;Sahu, B.B.;Lee, J.S.;Kim, H.R.;Han, Jeon G.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.341-341
    • /
    • 2016
  • The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

  • PDF

An Evaluation of the Repetitive Tooth Bleaching with Nonthermal Atmospheric Pressure Plasma

  • Nam, Seoul Hee;Kim, Gyoo Cheon;Hong, Jin Woo
    • International Journal of Oral Biology
    • /
    • v.41 no.4
    • /
    • pp.243-251
    • /
    • 2016
  • This study was undertaken to achieve a high bleaching efficacy with plasma, through longer application and reparative bleaching processes, by different shade evaluation methods. Extracted human teeth were divided into 6 groups (n=10). All teeth were treated in pairs. Low concentration of 15% carbamide peroxide (CP) was applied, with and without plasma, for 10, 20, and 30-min tooth bleaching, respectively. The bleaching procedure was repeated once daily for four days. The teeth were maintained in a moist environment provided by artificial saliva. The Vitapan Classical shade guide and Commission Internationale de L'Eclairage (CIELAB) color system were collectively used to measure the bleaching efficacy. Color evaluation was statistically analyzed using Student t-test and one-way analysis of variance (ANOVA) complemented by Tukey's test. Combining the plasma with 15% CP showed significantly greater color changes compared to bleaching without plasma (p<0.05). A high bleaching efficacy with plasma is proportional to the repetitive application and the treatment time. A 30-min application with plasma provided the best bleaching. Repetitive bleaching showed lower probability of color relapse of the bleached tooth. The color change by shade guide correlated with the changes in CIELAB color system. A value of 1 color change units (CCU) conversion factor for overall color change (${\Delta}E$) values comparisons was 3.724 values. The two measuring methods provide a more accurate correspondence of color change. The repetitive and longer application for tooth bleaching, combined with plasma, has a strong bleaching effect and produces whiter teeth.

A study on the characteristics of axially magnetized capacitively coupled radio frequency plasma (축 방향 자장이 인가된 용량 결합형 라디오 주파수 플라즈마의 특성 연구)

  • Lee, Ho-Jun;Yi, Dong-Yung;Tae, Heung-Sik;Whang, Ki-Woong
    • Proceedings of the KIEE Conference
    • /
    • 1999.11d
    • /
    • pp.1066-1068
    • /
    • 1999
  • Magnetic field is commonly used in low temperature processing plasmas in order to obtain high density. E $\times$ B magnetron or surface multipole configuration were most popular. However, the properties of capacitively coupled rf plasma confined by axially applied static magnetic fields have rarely been studied. In this paper, the effects of magnetic field on the characteristics of 13.56MHz/40KHz argon plasma will be reported. Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and omissive probe. At low pressure region ($\sim$10mTorr), ion current was increased by a factor of 3 - 4 due to reduction of diffusion loss of charged particles to the wall. It was observed that magnetic field induces large time variation of the plasma potential. The experimental result was compared with particle-in-cell simulation. It was also observed that electron temperature tend to decrease with increasing magnetic induction level for 40KHz discharge.

  • PDF