• Journal of the Korean Society for Precision Engineering
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• v.31 no.8
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• pp.697-703
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• 2014

This paper is study of solving vibration problem occurred in moving hand of wafer transfer robot in semiconductor manufacturing line. Long settling time for decreasing vibration makes low production rate, and moreover the excessive vibration of hand sometimes breaks the wafer in a cassette. The ways of reducing the moving speed and changing the type of motion profile did not help for lessening vibration. Therefore, we analyzed the mechanical property of the hand such as natural frequency, and frequency component of the motion profile currently used in the manufacturing line. In several conditions of motion profile, we found the best condition of which the frequency component in near of natural frequency of the hand is minimal and this induced small vibration in moving hand. The results were verified theoretically and experimentally using frequency analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.120-125
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• 2002

Si-wafers for solar cells were cast in a size of $50{\times}46{\times}0.5{\textrm}{mm}^3$ by vacuum casting method. The graphite mold coated by BN powder, which was to prevent the reaction of carbon with the molten silicon, was used. Without coating, the wetting and reaction of Si melt to graphite mold was very severe. In the case of BN coating, SiC was formed in the shape of tiny islands at the surface of Si wafer by the reaction between Si-melt and carbon of the graphite mold on the high temperature. The grain size was about 1 mm. The efficiency of Si solar cell was lower than that of Si solar cell fabricated on commercial single and poly crystalline Si wafer. The reason of low efficiency was discussed.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.23-28
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• 2009

We investigated the wafer-level MEMS capping process for which cavity formation in Si wafer was not required. Ni caps were formed by electrodeposition on 4" Si wafer and Ni rims of the Ni caps were bonded to the Cu rims of bottom Si wafer by using epoxy. Then, top Si wafer was debonded from the Ni cap structures by using SnBi layer of low melting temperature. As-evaporated SnBi layer was composed of double layers of Bi and Sn due to the large difference in vapor pressures of Bi and Sn. With keeping the as-evaporated SnBi layer at $150^{\circ}C$ for more than 15 sec, SnBi alloy composed of eutectic phase and Bi-rich $\beta$ phase was formed by interdiffusion of Sn and Bi. Debonding between top Si wafer and Ni cap structures was accomplished by melting of the SnBi layer at $150^{\circ}C$.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.120-123
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• 2014

Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.27-31
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• 2009

In this paper, the polymer adhesive bonding technology using wafer-level technology was investigated and warpage results were analyzed. Si and glass wafer was bonded after adhesive polymer layer and dam pattern for uniform state was patterned on glass wafer. In this study, warpage result decreased as the low of bonding temperature of Si wafer, bonding pressure and height of adhesive bonding layer. The availability of adhesive polymer bonding was confirmed by TC, HTC, Humidity soak test after dicing. The result is that defect has not found without reference to warpage.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.91-95
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• 2014

This paper presents the structure and process technology of simple and low-cost wafer-level packaging (WLP) for thin film radio frequency (RF) devices. Low-cost practical micromachining processes were proposed as an alternative to high-cost processes, such as silicon deep reactive ion etching (DRIE) or electro-plating, in order to reduce the fabrication cost. Gold (Au)/Tin (Sn) alloy was utilized as the solder material for bonding and hermetic sealing. The small size fabricated WLP of $1.04{\times}1.04{\times}0.4mm^3$ had an average shear strength of 10.425 $kg/mm^2$, and the leakage rate of all chips was lower than $1.2{\times}10^{-5}$ atm.cc/sec. These results met Military Standards 883F (MIL-STD-883F). As the newly proposed WLP structure is simple, and its process technology is inexpensive, the fabricated WLP is a good candidate for thin film type RF devices.

• Tribology and Lubricants
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• v.32 no.4
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• pp.119-124
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• 2016

In the sapphire wafering process, lapping is a crucial operation in order to reduce the damaged layer and achieve the target thickness. Many parameters, such as pressure, velocity, abrasive, slurry and plate, affect lapping characteristics. This paper presents an experimental investigation on the effect of the plate groove on the material removal rate and roughness of the wafer. We select the spiral pattern and rectangular type as the groove shapes. We vary the groove density by controlling the groove shape dimension, i.e., the groove width and pitch. As the groove density increases to 0.4, the material removal rate increases and gradually reaches a saturation point. When the groove density is low, the pressing load is mostly supported by the thick film, and only a small amount acts on the abrasives resulting to a low material removal rate. The roughness decreases on increasing the groove density up to 0.3 because thick film makes partial participations of large abrasives which make deep scratches. From these results, we could conclude that the groove affects the contact condition between the wafer and plate. At the same groove density, the pitch has more influence on reducing the film thickness than the groove width. By decreasing the groove density with a smaller pitch and larger groove width, we could achieve a high material removal rate and low roughness. These results would be helpful in understanding the groove effects and determining the appropriate groove design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.54-54
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• 2009

Ag thick film has been used for electrode materials with the excellent conductivity. Ag electrode is used in screen-printed silicon solar cells as a electrode material. Compared to photolithography and buried-contact technology, screen-printing technology has the merit of fabricating low-priced cells and enormous cells in a few hours. Ag paste consists of Ag powders, vehicles and additives such as frits, metal powders (Pb, Bi, Zn). Frits accelerate the sintering of Ag powders and induce the connection between Ag electrode and Si wafer. Thermophysical properties of frits and reactions among Ag, frits and Si influence on cell performance. In this study, Ag pastes were fabricated with adding different kinds of frits. After Ag pastes were printed on silicon wafer by screen-printing technology, the cells were fired using a belt furnace. The cell parameters were measured by light I-V to determine the short-circuit current, open-circuit voltage, FF and cell efficiency. In order to study the relationship between the reactivity of Ag, frit, Si and the electrical properties of cells, the reaction of frits and Si wafer on was studied with thermal properties of frits. The interface structure between Ag electrode and Si wafer were also measured for understanding the reactivity of Ag, frit and Si wafer. The excessive reactivity of Ag, frit and Si wafer certainly degraded the electrical properties of cells. These preliminary studies suggest that reactions among Ag, frits and Si wafer should optimally be controlled for cell performances.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2004.11a
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• pp.90-98
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• 2004

Nano/micro-scale studies on friction properties were conducted on Si (100) and three self-assembled monolayers (SAMs) (PFOTC, DMDM, DPDM) coated on Si-wafer by chemical vapor deposition technique. Experiments were conducted at ambient temperature $(24{\pm}1^{\circ}C)$ and humidity $(45{\pm}5\%)$. Nano-friction was evaluated using Atomic Force Microscopy (AFM) in the range of 0-40nN normal loads. In both Si-wafer and SAMs, friction increased linearly as a function of applied normal load. Results showed that friction was affected by the inherent adhesion in Si-wafer, and in the case of SAMs the physical/chemical structures had a major influence. Coefficient of friction of these test samples was also evaluated at the micro-scale using a micro-tribotester. It was observed that SAMs had superior frictional property due to their low interfacial energies. In order to study of the effect of contact area on friction coefficient at the micro-scale, friction was measured for Si-wafer and DPDM against Soda Lime balls (Duke Scientific Corporation) of different radii 0.25 mm, 0.5 mm and 1 mm at different applied normal loads $(1500,\;3000\;and\;4800{\mu}N)$. Results showed that Si-wafer had higher friction coefficient than DPDM. Furthermore, unlike that in the case of DPDM, friction was severely influenced by wear in the case of Si-wafer. SEM evidences showed that solid-solid adhesion to be the wear mechanism in Si-wafer.