• Journal of the Korean Magnetics Society
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• v.19 no.6
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• pp.197-202
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• 2009

The property of soft magnetism for the Corning glass/non-buffer or buffer Ta/Conetic(NiFeCuMo)/Ta prepared by the ion beam deposition sputtering was studied. The effect of crystal property and post annealing treatment depending on the thickness of Conetic thin films was investigated. The coercivities of Conetic thin films with easy and hard direction along to the applying magnetic field during deposition were compared with each other. The coercivity and magnetic susceptibility of Ta(5 nm)/Conetic(50 nm) thin film were 0.12 Oe and 1.2 ${\times}\;10^4$, respectively. From these results, firstly, the Conetic thin film was more soft magnetism thin film than other one such as permalloy NiFe. Secondly, the usage of soft magnetism Conetic thin film for GMR-SV (giant magneoresistance-spin valve) or MTJ (Megnetic Tunnel Junction) structure in a low magnetic field can be possible.

• Korean Journal of Materials Research
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• v.31 no.10
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• pp.562-568
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• 2021

(Bi_1/2Na_1/2)TiO₃ (BNT)-based ceramics are considered promising candidates for actuator application owing to their excellent electromechanical strain properties However, to obtain large strain properties, there remain several issues such as thermal stability and high operating fields. Therefore, this study investigates a reduction of operating field in (0.98-x)Bi_1/2Na_1/2TiO₃-0.02 BiAlO₃-xSrTiO₃ (BNT-2BA-100xST, x = 0.20, 0.21, 0.22, 0.23, and 0.24) via analyses of the microstructure, crystal structure, dielectric, polarization, ferroelectric and electromechanical strain properties. The average grain size of BNT-${\underline{2}}$BA-100xST ceramics decreases with increasing ST content. Results of polarization and electromechanical strain properties indicate that a ferroelectric to relaxor state transition is induced by ST modification. As a consequence, a large electromechanical strain of 592 pm/V is obtained at a relatively low electric field of 4 kV/mm in 22 mol% ST-modified BNT-2BA ceramics. We believe that the materials synthesized in this study are promising candidates for actuator applications.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.1
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• pp.71-76
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• 2008

Purpose: A simple and efficient method to prepare nanocrystalline ZnO thin film with pure strong UV emission on soda-lime-silica glass substrates by low-temperature annealing was improved. Methods: Crystal structural, surface morphological, and optical characteristics of nanocrystalline ZnO thin films deposited on soda-lime-silica glass substrates by prefiring final annealing process at 300$^{\circ}C$ were investigated by using X-ray diffraction analysis, field emission-scanning electron microscope, scanning probe microscope, ultraviolet-visible-near infrared spectrophotometer, and photoluminescence. Results: Highly c-axis-oriented ZnO films were obtained by prefiring at 300$^{\circ}C$. A high transmittance in the visible spectra range and clear absorption edge in the ultra violet range of the film was observed. The PL spectrum of ZnO thin film with a deep near band edge emission was observed while the defect-related broad green emission was nearly quenched. Conclusions: Our work will be possibly adopted to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below 300$^{\circ}C$, in the future.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.463-463
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• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.5
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• pp.208-214
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• 2019

The glass of $BaO-GeO_2-La_2O_3-ZnO$ system with a transmittance of more than 75 % at mid-wave infrared (MWIR) region in the range of $3{\mu}m$ to $5{\mu}m$ is manufactured and its property is evaluated. After selecting construction that can melt glass through flow button test, $BaO-GeO_2-La_2O_3$ system where 10 mol%, 20 mol% of ZnO were added respectively were melted at $1350^{\circ}C$ for 1 hour and $BaO-GeO_2-La_2O_3$ system of glass was manufactured. Among them, with 20 mol% of ZnO, 16 mol% BaO-56 mol% $GeO_2-8mol%$ $La_2O_3-16mol%$ ZnO system of glass was found to has less than $660^{\circ}C$ of glass transition temperature, more than 1.70 of refractive index, and more than 530 of knoop hardness. Therefore, it is concluded that glass of $BaO-GeO_2-La_2O_3-ZnO$ system of glass with 20 mol% ZnO has good melting conditions at low temperatures and excellent optical properties, thus, can be utilized for special optical materials field.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

• Journal of the Korean Chemical Society
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• v.63 no.6
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• pp.453-458
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• 2019

Synthesis of ZnCo₂O₃ oxide is performed by sol-gel method via nitrate-citrate route. Powder X-ray diffraction (XRD) study shows monoclinic unit cell having lattice parameters: a = 5.721(1) Å, b = 8.073(2) Å, c = 5.670(1) Å, β = 93.221(8)°, space group P_2/m and Z = 4. Average crystallite sizes determined by Scherrer equation are the range ~14-32 nm, whereas SEM micrographs show nano-micro meter size particles formed in ZnCo₂O₃. Endothermic peak at ~798 K in the Differential scanning calorimetric (DSC) trace without weight loss could be due to structural transformation and the endothermic peak ~1143 K with weight loss is due to reversible loss of O₂ in air atmosphere. Energy Dispersive X-ray (EDX) analysis profile shows the presence of elements Zn, Co and O which indicates the purity of the sample. Magnetic measurements in the range of +12 kOe to -12 kOe at 10 K, 77 K, 120 K and at 300 K by PPMS-II Physical Property Measurement System (PPMS) shows hysteresis loops having very low values of the coercivity and retentivity which indicates the weakly ferromagnetic nature of the oxide. Observed X-band EPR isotropic lineshapes at 300 K and 77 K show positive g-shift at g_iso ~2.230 and g_iso ~2.217, respectively which is in agreement with the presence of paramagnetic site Co²⁺(3d⁷) in the oxide. DC conductivity value of 2.875 ×10^-8 S/cm indicates very weakly semiconducting nature of ZnCo₂O₃ at 300 K. DRS absorption bands ~357 nm, ~572 nm, ~619 nm and ~654 nm are due to the d-d transitions ⁴T_1g(⁴F)→²E_g(²G), ⁴T_1g(⁴F)→⁴T_1g(⁴P), ⁴T_1g(⁴F)→⁴A_2g(⁴F), ⁴T_1g(⁴F)→⁴T_2g(⁴F), respectively in octahedral ligand field around Co²⁺ ions. Direct band gap energy, E_g~ 1.5 eV in the oxide is obtained by extrapolating the linear part of the Tauc plot to the energy axis indicates fairly strong semiconducting nature of ZnCo₂O₃.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.129-129
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• 2016

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Current Photovoltaic Research
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• v.4 no.2
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• pp.68-79
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• 2016

The power conversion efficiency of perovskite solar cells has remarkably increased from 3.81% to 22.1% in the past 6 years. Perovskite solar cells, which are based on the perovskite crystal structure, are fabricated using organic-inorganic hybrid materials. The advantages of these solar cells are their low cost and simple fabrication procedure. Also, they have a band gap of about 1.6 eV and effectively absorb light in the visible region. For the commercialization of perovskite solar cells in the field of photovoltaics, the issue of their long term stability cannot be overlooked. Although the development of perovskite solar cells is unprecedented, their main drawback is the degradation of the perovskite structure by moisture. This degradation is accelerated by exposure to UV light, temperature, and external bias. This paper reviews the aforesaid reasons for perovskite solar cell degradation. We also discuss the research directions that can lead to the development of perovskite solar cells with high stability.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.421-421
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• 2006

The light and energy-efficiency of classical liquid crystal displays is notoriously poor due to the use of absorption-based linear polarisers and colour filters. For instance, the light efficiency of PVAL polarisers is typically between 40 and 45 % and the colour filters have a typical efficiency below 35 % which results in a total light and energy-efficiency of the display below 10 %. In the past, a variety of polarizers were developed with an enhanced efficiency in generating linearly polarized light. Typically, these polarizers are based on the polarisationselective reflection, scattering or refraction of light i.e. one polarisation direction of light is directly transmitted to the LCD/viewer and the other polarization direction of light is depolarised and recycled which results in a typical efficiency for generating linearly polarized light of 70-85 %. Also, special colour filters have been proposed based on chiral-nematic reactive mesogens which increase the efficiency of generating colour. Despite the enormous progress in this field, a need persists for improved methods for generating polarized light and colour based on low cost optical components with a high efficiency. Here, the use of holographic phase gratings is reported for the generation of polarized light and colour. The phase grating are recorded in a photopolymer which is coated onto a backor frontlight for LCDs. Typically the recording is performed in the transmisson mode or in the waveguiding mode and slanted phase gratings are generated with their refractive index modulation at an angle between 20o and 45o with the normal of the substrate. It is shown that phase gratings with a high refractive index modulation and a high efficiency can be generated by a proper selection of the photopolymer and illumination conditions. These phase gratings coupleout linearly polarized light with a high contrast (> 100) and the light is directed directly to the LCD/viewer without the need for redirection foils. Dependent on the type of phase grating, the different colours are coupled-out at a slightly different angle which potentially increases the efficiency of classical colour filters. Moreover, the phase gratings are completely transparent in direct view which opens the possibility to use them in frontlights for LCDs. Holographic polarization gratings posses a periodic pattern in the polarization state of light (and not in the intensity of light). A periodic pattern in the polarization direction of linearly polarized light is obtained upon interference of two circularly polarized laser beams. In the second part of the lecture, it is shown that these periodic polarization patterns can be recorded in a linear photo-polymerizable polymer (LPP) and that such an alignment layer induces a period rotation in the director of (reactive and non-reactive) liquid crystals. By a proper design, optical components can be produced with only first order diffraction and with a very high efficiency (>0.98). It is shown that these diffraction gratings are potentially useful in projection displays with a high brightness and energy efficiency