• Title/Summary/Keyword: Low-Power Circuit Design

Search Result 778, Processing Time 0.028 seconds

Design of pHEMT channel structure for single-pole-double-throw MMIC switches (SPDT 단일고주파집적회로 스위치용 pHEMT 채널구조 설계)

  • Mun Jae Kyoung;Lim Jong Won;Jang Woo Jin;Ji, Hong Gu;Ahn Ho Kyun;Kim Hae Cheon;Park Chong Ook
    • Journal of the Korean Vacuum Society
    • /
    • v.14 no.4
    • /
    • pp.207-214
    • /
    • 2005
  • This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

Design of a High-Resolution Integrating Sigma-Delta ADC for Battery Capacity Measurement (배터리 용량측정을 위한 고해상도 Integrating Sigma-Delta ADC 설계)

  • Park, Chul-Kyu;Jang, Ki-Chang;Woo, Sun-Sik;Choi, Joong-Ho
    • Journal of IKEEE
    • /
    • v.16 no.1
    • /
    • pp.28-33
    • /
    • 2012
  • Recently, with mobile devices increasing, as a variety of multimedia functions are needed, battery life is decreased. Accordingly the methods for extending the battery life has been proposed. In order to implement these methods, we have to know exactly the status of the battery, so we need a high resolution analog to digital converter(ADC). In case of the existing integrating sigma-delta ADC, it have not convert reset-time conversion cycle to function of resolution. Because of this reason, all digital values corresponding to the all number of bits will not be able to be expressed. To compensated this drawback, this paper propose that all digital values corresponding to the number of bits can be expressed without having to convert reset-time additional conversion cycle to function of resolution by using a up-down counter. The proposed circuit achieves improved SNDR compared to conventional converters simulation result. Also, this was designed for low power suitable for battery management systems and fabricated in 0.35um process.

Trace-Back Viterbi Decoder with Sequential State Transition Control (순서적 역방향 상태천이 제어에 의한 역추적 비터비 디코더)

  • 정차근
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.40 no.11
    • /
    • pp.51-62
    • /
    • 2003
  • This paper presents a novel survivor memeory management and decoding techniques with sequential backward state transition control in the trace back Viterbi decoder. The Viterbi algorithm is an maximum likelihood decoding scheme to estimate the likelihood of encoder state for channel error detection and correction. This scheme is applied to a broad range of digital communication such as intersymbol interference removing and channel equalization. In order to achieve the area-efficiency VLSI chip design with high throughput in the Viterbi decoder in which recursive operation is implied, more research is required to obtain a simple systematic parallel ACS architecture and surviver memory management. As a method of solution to the problem, this paper addresses a progressive decoding algorithm with sequential backward state transition control in the trace back Viterbi decoder. Compared to the conventional trace back decoding techniques, the required total memory can be greatly reduced in the proposed method. Furthermore, the proposed method can be implemented with a simple pipelined structure with systolic array type architecture. The implementation of the peripheral logic circuit for the control of memory access is not required, and memory access bandwidth can be reduced Therefore, the proposed method has characteristics of high area-efficiency and low power consumption with high throughput. Finally, the examples of decoding results for the received data with channel noise and application result are provided to evaluate the efficiency of the proposed method.

A 2.4 GHz Bio-Radar System with Small Size and Improved Noise Performance Using Single Circular-Polarized Antenna and PLL (하나의 원형 편파 안테나와 PLL을 이용하여 소형이면서도 개선된 잡음 성능을 갖는 2.4 GHz 바이오 레이더 시스템)

  • Jang, Byung-Jun;Park, Jae-Hyung;Yook, Jong-Gwan;Moon, Jun-Ho;Lee, Kyoung-Joung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.20 no.12
    • /
    • pp.1325-1332
    • /
    • 2009
  • In this paper, we design a 2.4 GHz bio-radar system that can detect human heartbeat and respiration signals with small size and improved noise performance using single circular-polarized antenna and phase-locked loop. The demonstrated bio-radar system consists of single circular-polarized antenna with $90^{\circ}$ hybrid, low-noise amplifier, power amplifier, voltage-controlled oscillator with phase-locked loop circuits, quadrature demodulator and analog circuits. To realize compact size, the printed annular ring stacked microstrip antenna is integrated on the transceiver circuits, so its dimension is just $40\times40mm^2$. Also, to improve signal-to-noise-ratio performance by phase noise due to transmitter leakage signal, the phase-locked loop circuit is used. The measured results show that the heart rate and respiration accuracy was found to be very high for the distance of 50 cm without the additional digital signal processing.

Design of a Novel Instrumentation Amplifier using Current-conveyor(CCII) (전류-컨베이어(CCII)를 사용한 새로운 계측 증폭기 설계)

  • CHA, Hyeong-Woo;Jeong, Tae-Yun
    • Journal of the Institute of Electronics and Information Engineers
    • /
    • v.50 no.12
    • /
    • pp.80-87
    • /
    • 2013
  • A novel instrumentation amplifier(IA) using positive polarity current-conveyor(CCII+) for electronic measurement systems with low cost, wideband, and gain control with wide range is designed. The IA consists of two CCII+, three resistor, and an operational amplifier(op-amp). The principal of the operating is that the difference of two input voltages applied into two CCII+ used voltage and current follower converts into same currents, and then these current drive resistor of (+) terminal and feedback resistor of op-amp to obtain output voltage. To verify operating principal of the IA, we designed the CCII+ and used commercial op-amp LF356. Simulation results show that voltage follower used CCII+ has offset voltage of 0.21mV at linear range of ${\pm}$4V. The IA had wide gain range from -20dB to 60dB by variation of only one resistor and -3dB frequency for the gain of 60dB was 400kHz. The IA also has merits without matching of external resistor and controllable offset voltage using the other resistor. The power dissipation of the IA is 130mW at supply voltage of ${\pm}$5V.

Design and fabrication of the MMIC frequency doubler for 29 GHz local oscillator application (29GHz 국부 발진 신호용 MMIC 주파수 체배기의 설계 및 제작)

  • Kim, Jin-Sung;Lee, Seong-Dae;Lee, Bok-Hyoung;Kim, Sung-Chan;Sul, Woo-Suk;Lim, Byeong-Ok;Kim, Sam-Dong;Park, Hyun-Chang;Park, Hyung-Moo;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.38 no.11
    • /
    • pp.63-70
    • /
    • 2001
  • We demonstrate the MMIC (monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 GHz local oscillator signals from 14.5 GHz input signals. These devices were designed and fabricated by using the M MIC integration process of $0.1\;{\mu}m$ gate-length PHEMTs (pseudomorphic high electron mobility transistors) and passive components. The measurements showed S11 or -9.2 dB at 145 GHz, S22 of -18.6 dG at 29 GHz and a minimum conversion loss of 18.2 dB at 14.5 GHz with an input power or 6 dBm. Fundamental signal of 14.5 GHz were suppressed below 15.2 dBe compared to the second harmonic signal at the output port, and the isolation characteristics of fundamental signal between the input and the output port were maintained above :i0 dB in the frequency range 10.5 GHz to 18.5 GHz. The chip size of the fabricated MMIC frequency doubler is $1.5{\times}2.2\;mm^2$.

  • PDF

A Design of Novel Instrumentation Amplifier Using a Fully-Differential Linear OTA (완전-차동 선형 OTA를 사용한 새로운 계측 증폭기 설계)

  • Cha, Hyeong-Woo
    • Journal of the Institute of Electronics and Information Engineers
    • /
    • v.53 no.1
    • /
    • pp.59-67
    • /
    • 2016
  • A novel instrumentation amplifier (IA) using fully-differential linear operational transconductance amplifier (FLOTA) for electronic measurement systems with low cost, wideband, and gain control with wide range is designed. The IA consists of a FLOTA, two resistor, and an operational amplifier(op-amp). The principal of the operating is that the difference of two input voltages applied into FLOTA converts into two same difference currents, and then these current drive resistor of (+) terminal and feedback resistor of op-amp to obtain output voltage. To verify operating principal of the IA, we designed the FLOTA and realized the IA used commercial op-amp LF356. Simulation results show that the FLOTA has linearity error of 0.1% and offset current of 2.1uA at input dynamic range ${\pm}3.0V$. The IA had wide gain range from -20dB to 60dB by variation of only one resistor and -3dB frequency for the 60dB was 10MHz. The proposed IA also has merits without matching of external resistor and controllable offset voltage using the other resistor. The power dissipation of the IA is 105mW at supply voltage of ${\pm}5V$.

Developed an output device for high-frequency cosmetic medical equipment using micro multi-needle (마이크로 멀티니들을 이용한 고주파 피부미용 의료기기를 위한 출력 장치 개발)

  • Kim, Jun-tae;Joo, Kyu-tai;Cha, Eun Jong;Kim, Myung-mi;Jeong, Jin-hyoung
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
    • /
    • v.14 no.5
    • /
    • pp.394-402
    • /
    • 2021
  • The entry of an aging society and the extension of human life expectancy, the increasing interest in women's social advancement and men's appearance, and the natural interest in K-culture through media media, while receiving worldwide attention, Focus on K-Bueaty. Recently, looking at the occupation of the medical tourism field, in the case of aesthetic medicine tourism such as molding and dermatology, it has gained popularity not only in Asia such as China and Japan, but also in North America and Europe. The first external confirmation of human aging is the wrinkles on the skin of the face. Clean, wrinkle-free, elastic and healthy skin is a desire of most people. Skin condition and condition such as focused ultrasonic stimulation (HIFU: High Intensity Focused Utrasound) and low frequency, high frequency (RF: Radio Frequency), galvanic therapy using microcurrent, cryotherapy using rapid cooling, etc. Depending on the method of management, the effect of the treatment differs depending on the output and the stimulation site, etc., even in the treatment of medical equipment and beauty equipment using the same mechanism. In this research, in order to develop invasive high-frequency dermatological devices using a large number of beauty medical devices and microneedles of beauty devices, the international standards IEC 60601-2 (standards for individual medical devices) and MFDS (Ministry of) We designed and developed a high-frequency output device in compliance with the high-frequency stimulation standard announced in the Food and Drug Safety (Ministry of Food and Drug Safety). The circuit design consists of an amplifier (AMP: Amplifier) using Class-A Topology and a power supply device using Half-Bridge Topology. As a result of measuring the developed high-frequency output device, an average efficiency of 63.86% was obtained, and the maximum output was measured at 116.7W and 50.67dBm.