• 한국전산유체공학회:학술대회논문집
• /
• 2008.03b
• /
• pp.666-669
• /
• 2008

Droplet in miniaturized microfluidic systems have received much focused attention recently. In this work, electrical charging phenomenon of a conducting water droplet on the electrode under the dc electric field is studied and using this phenomenon droplet actuation method for microreactor applications is experimentally demonstrated. To find effects of key factors, the effects of electric field, medium viscosity, and droplet size are investigated. A scaling law of charging for the conducting droplet is derived from the experimental results. Unlike the case of a perfect conductor, the estimated amount of electrical charge ($Q_{est}$) of a water droplet is proportional to the 1.59 power of the droplet radius (R) and the 1.33 power of the electric field strength (E). (For a spherical perfect conductor, Q is proportional to R2 and E.) It is thought that the differences are mainly due to incomplete charging of a water droplet resulted from the combined effect of electrochemical reaction at electrode and the relatively low conductivity of water. Using this phenomenon, we demonstrate the transport of the charged droplet and fusion of two oppositely-charged droplets. When electric field is subjected sequentially on the electrode, the charged droplet is transported on the electrode. For the visualization of fusion of charged droplets, the precipitation reaction is used. When subjected to a DC voltage, two droplets charged are moving and merging toward each other due to the Coulombic force and chemical reaction is simultaneously occurred by coalescence of droplets. It may be due to the interchange effect of charge. It is shown that the droplet can be used for microreactor where transporting, merging etc. of reagents constitute unit operation.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.11
• /
• pp.575-580
• /
• 2001

In this paper, using $500\mum-thickness\; (100)\; silicon\; wafer,\; flat\; 65\mum-thickness$ silicon mirror plates were fabricated through dry etching and wet etching, and $45\mum-depth$ grooved driving electrodes were fabricated through UV-LIGA process. Four shapes of the driving electrode were fabricated: twenty four grooves of the $50\mum-width$, twelve grooves of the $100\mum-width$, six grooves of the $200\mum-width$, and no grooves on the driving electrode. Fabricated mirror plate size and spring size are $2400\times2400\times65\mum3\; and \;500\times10\times65\mum3,$ respectively. Mirror plate parts and driving electrodes were assembled into the scanning mirrors. Measured natural resonance frequencies were about 600Hz which have error within $\pm 2%$ to calculated value. Due to the squeeze effect in the narrow gap between the mirror plate and the driving electrode, measured resonance frequencies were reduced as raising the amplitude of the mirror plate. In a case of driving electrode without grooves, the resonance frequency was reduced largely, compared with a case of driving electrode with grooves. According to the experimental results, squeeze effect was smaller in the driving electrode with smaller-width and many grooves. Therefore, the driving electrode with smaller-width and many grooves was effective in low voltage and high speed operation.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.16 no.2
• /
• pp.104-112
• /
• 2002

In this paper, it is suggested that the selection method of parameter of Power System Stabilizer(PSS) with robustness in low frequency oscillation for Thyristor Controlled Series Capacitor(TCSC) using Geletic Algorithm(GA). A TCSC meddle consists of a stories capacitor and a parallel path with a thyristor valve and a series inductor. Also in in parallel, as is typical with series capacitor applications, is a metal-oxide varistor(MOV) for overvoltage protection. The proposed PSS parameters are optimized using GA in order to maintain optimal operation of TCSC which is expected to be applied in transmission system to achieve a number of benefits under the various operating conditions. In order to verify the robustness of the proposed method, we considered the dynamic response of angular velocity deviation and terminal voltage deviation under a power fluctuation and rotor angle variation.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.20 no.7
• /
• pp.14-20
• /
• 2006

The discharge characteristics for the reset period of sustain pulses of display discharge in address overlapped display driving methode is studied. It has been understood that the display discharge is strongly influenced of not only the wall charge but also the space charge from the experiment result. The first display discharge which comes out exactly after the rest periods strongly depends on the width of the reset period and as for the second display discharge, the dependancy of it is very low. Even if the first display discharge is a little insufficient if the wall charge is accumulated enough, the second display discharge can be stably induced. However, considering the influence of the space charge, it is preferable within the width of $30[{\mu}s}]$ of the reset period. When the rest period is up to $30[{\mu}s}]$, the uniform voltage operation margin of the display discharge of about 12[V] was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.35-38
• /
• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

• ETRI Journal
• /
• v.37 no.6
• /
• pp.1135-1142
• /
• 2015

Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.4
• /
• pp.319-324
• /
• 2011

This paper dealt with a partial discharge (PD) detection method for insulation diagnosis in cast-resin transformers. To detect PD pulse, a planar-capacitive probe was designed and fabricated. The probe has no insulation problem and can be installed on cast-resin transformers even in operation since it does not connect with high voltage conductor. The PD measurement system consists of the capacitive probe, a coupling network of 100 [kHz] low-cutoff frequency, and an amplifier with a gain of 40 [dB] and a frequency bandwidth of 500 [Hz]~45 [MHz]. A plane-needle and a plane-plane electrode system were fabricated to simulate insulation defects in a cast-resin transformer. Sensitivity of the PD measurement system, which is evaluated by a standard calibrator was 0.35 [mV/pC] for positive and 0.45 [mV/pC] for negative, respectively. The PD detection by the capacitive probe was less sensitive than that by a coupling capacitor according to IEC 60270, but we could analyze the magnitude and the phase distribution of PD pulse.

• Clean Technology
• /
• v.14 no.3
• /
• pp.218-223
• /
• 2008

Decomposition of reactive organic compound dispersed in microemulsion media by hydroxide ions and proton ions generated during electrolysis was tried and the half-lifes for decomposition were compared. Absorbance of p-nitrophenoxide produced from the decomposition of p-nitrophenylacetate (PNPA) was followed to find the rate of decomposition. The applied voltage, temperature, and the amount of substrate were changed to see the effects on the decomposition rate. The advantages of electrolysis in microemulsion system were the high solubilizing capacity of substrate, easy control of decomposition rate, low operation cost, no need for any addition of chemicals, and no byproducts. The mechanism of decomposition and the application to water purification were discussed.

• Journal of the Optical Society of Korea
• /
• v.14 no.3
• /
• pp.260-265
• /
• 2010

This paper proposes a transflective configuration of the dual operating mode liquid crystal display, which has transmissive dynamic and reflective memory parts in its pixel. By employing a wideband structure and optimizing the cell-gap of the liquid crystal layer, the reflective memory part shows a very low reflectance in the dark state, good dispersion properties for the entire visible range, as well as high reflectance in the bright state. The transmissive dynamic part is designed to have the same cell-gap and rubbing direction as those of the reflective part. The driving voltage of the dynamic part and transmittance of the bright state can also be controlled by using compensation film with a positive a-plate, which can compensate the reflective part. Experimental results in the memory part operation demonstrate that the contrast ratio is over 50:1 and the reflectance in the dark state is reduced to 56% on average of that of the conventional dual mode configuration for the entire visible range. The contrast ratio of the dynamic part is 300:1.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.14 no.1
• /
• pp.46-53
• /
• 2009

A new zero-current switching LLC resonant post-regulator for multi-output power system is proposed in this paper. A conventional LLC resonant converter employs extra non-isolated DC/DC converters to obtain tight-regulated multi-slave output voltages. Therefore, it has several serious problems such as a poor efficiency and high cost of production. The proposed post-regulator features low voltage and current stress across the output rectifier diodes and power switches. Moreover, the proposed post-regulator requires only one power switch instead of the bulky and expensive non-isolated DC/DC converter. Therefore, it features a simple structure and lower cost. Especially, since the proposed post-regulator can ensure the ZCS of all power switches, it has very desirable advantages such as more improved EMI characteristics and reduced switching losses. Finally, to confirm the operation, validity, and features of the proposed circuit, experimental results from a proposed zero-current LLC resonant post-regulator are presented.