• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.1015-1018
• /
• 2004

We proposed a new cross-coupled level shifter circuit using low temperature poly-Si(LTPS) TFT. The proposed level shifter can operate on low input voltage in spite of low mobility and widely varying high threshold voltage of LTPS TFT. Also, the proposed level shifter operates at high frequency and reduces power consumption for having fast rising and falling time and shortening period flowing short-circuit currents.

• Computers and Concrete
• /
• 제16권2호
• /
• pp.261-274
• /
• 2015

This study established the standard recommended values and expansion fracture threshold values for the content of steel slag in controlled low-strength materials (CLSM) to ensure the appropriate use of steel slag aggregates and the prevention of abnormal expansion. The steel slags used in this study included basic oxygen furnace (BOF) slag and desulfurization slag (DS), which replaced 5-50% of natural river sand by weight in cement mixtures. The steel slag mortars were tested by high-temperature ($100^{\circ}C$) curing for 96 h and autoclave expansion. The results showed that the effects of the steel slag content varied based on the free lime (f-CaO) content. No more than 30% of the natural river sand should be replaced with steel slag to avoid fracture failure. The expansion fracture threshold value was 0.10%, above which there was a risk of potential failure. Based on the scanning electron microscopy (SEM) analysis, the high-temperature catalysis resulted in the immediate extrusion of peripheral hydration products from the calcium hydroxide crystals, leading to a local stress concentration and, eventually, deformation and cracking.

• 한국안전학회지
• /
• 제18권3호
• /
• pp.1-7
• /
• 2003

In this study, CT specimens were prepared from spring steel(SPS5) processed shot peening. The fatigue crack growth tests were carried out in the environment of the room temperature md low temperature at $25^{\circ}C$, $-30^{\circ}C$, $-50^{\circ}C$, $-70^{\circ}C$ $-100^{\circ}C$ and $-150^{\circ}C$ in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range ΔKth in the early stage of fatigue crack growth (Region I) and stress intensity factor range $\Delta$K in the stable of fatigue crack growth (Region II) were decreased in proportion to descend temperature. It was shown that the fatigue resistance characteristics and fracture strength at low temperature are considerable higher than those of mom temperature in the early stage and stable of fatigue crack growth region.

• Journal of the Optical Society of Korea
• /
• 제20권5호
• /
• pp.601-606
• /
• 2016

In this study, in order to analyze the low-temperature sintering process of silver and copper nanoparticles, we calculate their melting temperatures and surface melting temperatures with respect to particle size. For this calculation, we introduce the concept of mean-squared displacement of the atom proposed by Shi (1994). Using a parameter defined by the vibrational component of melting entropy, we readily obtained the surface and bulk melting temperatures of copper and silver nanoparticles. We also calculated the absorption cross-section of nanoparticles for variation in the wavelength of light. By using the calculated absorption cross-section of the nanoparticles at the melting temperature, we obtained the laser threshold energy for the sintering process with respect to particle size and wavelength of laser. We found that the absorption cross-section of silver nanoparticles has a resonant peak at a wavelength of close to 350 nm, yielding the lowest threshold energy. We calculated the intensity distribution around the nanoparticles using the finite-difference time-domain method and confirmed the resonant excitation of silver nanoparticles near the wavelength of the resonant peak.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2009년도 정보 및 제어 심포지움 논문집
• /
• pp.159-162
• /
• 2009

The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.

• ETRI Journal
• /
• 제28권5호
• /
• pp.555-560
• /
• 2006

A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of $190^{\circ}C$, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.

• 한국마린엔지니어링학회:학술대회논문집
• /
• 한국마린엔지니어링학회 2001년도 추계학술대회 논문집(Proceeding of the KOSME 2001 Autumn Annual Meeting)
• /
• pp.65-70
• /
• 2001

In this study, CT specimens were prepared from spring steel(SUP9) processed shot peening which was room temperature, low temperature and high temperature experiment. And we got the following characteristics from fatigue crack growth test carried out in the environment of room, low temperature and high temperature at $25^{\circ}C$, -3$0^{\circ}C$, -5$0^{\circ}C$, -7$0^{\circ}C$, -10$0^{\circ}C$ and 5$0^{\circ}C$, 10$0^{\circ}C$ , 15$0^{\circ}C$, 18$0^{\circ}C$ and in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range $\DeltaK_{th}$ in the early stage of fatigue crack growth (Region I ) and stress intensity factor range ΔK in the stable of fatigue crack growth (Region II) was decreased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권8호
• /
• pp.813-818
• /
• 1996

Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

• 한국해양공학회:학술대회논문집
• /
• 한국해양공학회 2001년도 추계학술대회 논문집
• /
• pp.282-286
• /
• 2001

In this study, CT specimens were prepared from spring steel(SUP9) processed shot peening which was room temperature, low temperature and high temperature experiment. And we got the following characteristics from fatigue crack growth test carried out in the environment of room, low temperature and high temperature at $25^{\circ}C$,$-30^{\circ}C$,$-50^{\circ}C$,$-70^{\circ}C$ and $-100^{\circ}C$ in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range $\Delta K_{th}$ in the early stage of fatigue crack growth (Region I ) and stress intensity factor range $\Delta K$ in the stable of fatigue crack growth (Region II) was decreased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 하계학술대회 논문집 C
• /
• pp.1239-1241
• /
• 1995

The different hydrogen passivation effects on low-temperature processed and high-temperature processed poly-Si thin film transistors have been investigated. The hydrogen passivation on low-temperature processed poly-Si TFT results in the increase of the field-effect mobility and the decrease or the threshold voltage, while the hydrogenation increases the field-effect mobility and decreases the leakage current in high-temperature processed poly-Si TFT. The effective trap state densities of low-temperature processed poly-Si TFT before and after 5 hours of hydrogenation are estimated at about $4.0{\times}10^{12}/cm^2$ and $1.5{\times}10^{12}/cm^2$, while those of high-temperature processed poly-Si TFT are about $1.5{\times}10^{12}/cm^2$ and $1.2{\times}10^{12}/cm^2$, respectively.