• Journal of Magnetics
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• 제14권4호
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• pp.144-146
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• 2009

This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]$_N$ multilayers were prepared at room temperature to form a $L1_0$-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at $300{^{\circ}C}$ for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature $L1_0$- FePt deposition process, which will be essential for future extremely high density magnetic recording media.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.700-704
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• 1998

In this paper, the optical properties of boron ion implanted GaAs were investigated by photoluminescence(PL) measurements. The implantations were preformed at room temperature with the energy of 150 eV. The range of implanted dose was $10^{12}~10^{15} ions/cm^2$. The boron implanted samples were annealed between $450^{\circ}C$ and $800^{\circ}C$ for 20 minutes. The crystallinity of low dosed samples were increased with increasing annealing temperature up to $700^{\circ}C$ while that of the high dosed($10^{15} ions/cm^2$) was almost same. From the samples with dose of $10^{14}~10^{15} ions/cm^2$, two emission bands were observed at 1.438 eV (B1) and 1.459 eV (B2) after the thermal treatment. These emission bands seems to be attributed to the $B_{Ga}$-defect complex.

• 한국표면공학회지
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• 제26권3호
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• pp.127-134
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• 1993

P+ and BF2+ were implanted to LPCVD amorphous silicon films deposited on thermally-oxidized silicon wafers and the low temperature annealing process followed with various conditions to activate implanted ions and to recrystallize the films. We tried to find the optimum processing condition by comparing the recrystallization behaviors and the electrical properties. TEM analysis showed that the final grain size of BF2+-implanted films was similar to that of unimplanted films, whereas the grains of P+-implanted films. For both P+ - and BF2+ -implanted films, sheet resistances were decreased with elevating annealing temperature and the minimum value was about 110~120$\Omega$/$\square$ at $600^{\circ}C$.

• Nuclear Engineering and Technology
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• 제53권1호
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• pp.172-177
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• 2021

The microstructure and texture of three 316L foils of 25 ㎛ thickness, which were subjected to different manufacturing process, were systematically characterized using advance analytical techniques. Then, the electrochemical property of the 316L foils in simulated pressurized water reactor (PWR) solution was analyzed using potentiodynamic polarization. The results showed that final rolling strain and annealing temperature had evident effect on grain size, fraction of recrystallization, grain boundary type and texture distribution. It was suggested that large final rolling strain could transfer Brass texture to Copper texture; low annealing temperature could limit the formation of preferable orientations in the rolling process to reduce anisotropy. Potentiodynamic polarization test showed that all samples exhibited good corrosion performance in the simulated primary PWR solution.

• 한국안전학회지
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• 제13권4호
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• pp.213-220
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• 1998

Welding structures will be occurred sudden crack or failure by reduced fracture toughness in case of low temperature. To protect these unstable fracture is very important. Because fracture of welding part come from welding faults or residual stress, critical stress intensity factors are acquired at temperatures between $22^{\circ}C$ and $-70^{\circ}C$ from base metal, welding metal and H.A.Z. It was studied effectiveness of annealing and affection of residual stress under low temperatures. In case of fracture toughness test, it showed that fracture toughness value decreased, according to the decrease of temperature. Expecially In case that compressive residual stress was existed, $K_C$ increased.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.19.2-19.2
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• 2007

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.1151-1152
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• 2015

Silicon zinc oxide (SZO) thin films were deposited via co-sputtering. Two kinds of post-treatment, furnace annealing and hot pressing, were carried out on the deposited SZO films. The effects of the post-treatment on the chemical bond and surface roughness of the deposited SZO films were analyzed as functions of the post-treatment conditions that were used. It was observed from the X-ray photoelectron spectroscopy (XPS) results that the amount of Si-O bonds in the SZO film drastically increased after the low-temperature furnace annealing. The experiment results showed that the hot pressing method would be favorable as it could improve the electrical characteristics of the SZO-TFTs.

• 한국광학회지
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• 제11권3호
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• pp.152-157
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• 2000

전자빔 증착된 Indium Tin Oxide(ITO) 박막의 진공 열처리 효과를 알아보기 위해 진공 및 대기 중에서 열처리 온도( $200-335^{\circ}C$) 및 산소 분압 변화($1\times^10^{-5}-1$\times10^{-4} torr$)에 따른 투과율과 면-저항의 변화 및 결정구조를 조사하였다. 시편은 (222) 계열의 면의로 우세 배향된 다결정박막이다. 진고 열처리 변수를 적절하게 조절하여 $62\Omega/\box$의 면저항과 99%(500nm) 이상의 투과율을 가지는 고품질의 박막을 얻을 수 있었다.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.81-84
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• 2003

The effect of annealing condition on the texture and microstructure development in Ni tapes fabricated by cold-rolling including powder metallurgy was investigated. The Pole-figure results showed that the Ni tapes annealed at lower temperature than 50$0^{\circ}C$ were the mixture of brass deformation texture and cube texture. The specimens annealed at high temperatures had only well-developed cube texture and the FWHMs of in-plane and out-of-plane were in the range of 8-10$^{\circ}$. The degree of texture was not significantly depended on annealing temperatures. The grain morphologies of Ni tapes prepared at low temperatures showed serrated grain boundaries due to incomplete recrystallization, but the specimens prepared at high temperatures showed stabilized grain shape without serrated grain boundaries.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.1013-1018
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• 1996

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.