Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Characterization of Silicon-Zinc-Oxide films by thermal annealing methods

열처리 방식에 따른 실리콘 산화아연 박막의 물성 분석

  • Lee, Sang-Hyuk (Department of Electronic Systems Engineering, Hanyang University) ;
  • Jun, Hyun-Sik (Department of Electronic Systems Engineering, Hanyang University) ;
  • Park, Jin-Seok (Department of Electronic Systems Engineering, Hanyang University)
  • 이상혁 (한양대학교 전자시스템공학과) ;
  • 전현식 (한양대학교 전자시스템공학과) ;
  • 박진석 (한양대학교 전자시스템공학과)
  • Published : 2015.07.15
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Abstract

Silicon zinc oxide (SZO) thin films were deposited via co-sputtering. Two kinds of post-treatment, furnace annealing and hot pressing, were carried out on the deposited SZO films. The effects of the post-treatment on the chemical bond and surface roughness of the deposited SZO films were analyzed as functions of the post-treatment conditions that were used. It was observed from the X-ray photoelectron spectroscopy (XPS) results that the amount of Si-O bonds in the SZO film drastically increased after the low-temperature furnace annealing. The experiment results showed that the hot pressing method would be favorable as it could improve the electrical characteristics of the SZO-TFTs.

Keywords