• 한국산업정보학회논문지
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• 제20권1호
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• pp.49-55
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• 2015

This paper proposes a 2.4 GHz RF oscillator with a very low close-in phase noise performance. This is composed of a low frequency crystal oscillator and three frequency multipliers such as two doubler (X2) and one tripler (X3). The proposed oscillator is implemented as a hybrid type circuit design using a discrete silicon bipolar transistor. The measurement results of the proposed oscillator structure show -115 dBc/Hz close-in phase noise at 10 kHz offset frequency, while only dissipating 5 mW from a 1-V supply. Its close-in phase noise level is very close to that of a low frequency crystal oscillator with little degradation of noise performance. The proposed structure which is consisted of a low frequency crystal oscillator and a frequency multiplier provides new method to implement a low power low close-in phase noise RF local oscillator.

• IEIE Transactions on Smart Processing and Computing
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• 제4권3호
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• pp.158-162
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• 2015

A low phase noise CMOS voltage controlled oscillator(VCO) for multi-band/multi-standard RF Transceivers is presented. For both wide tunability and low phase noise characteristics, Hybrid inductor which uses both bondwire inductor and planar spiral inductor in the same area, is proposed. This approach reduces inductance variation and presents high quality factor without custom-designed single-turn inductor occupying large area, which improves phase noise and tuning range characteristics without additional area loss. An LC VCO is designed in a 0.13um CMOS technology to demonstrate the hybrid inductor concept. The measured phase noise is -121dBc/Hz at 400KHz offset and -142dBc/Hz at 3MHz offset from a 900MHz carrier frequency after divider. The tuning range of about 28%(3.15 to 4.18GHz) is measured. The VCO consumes 7.5mA from 1.3V supply and meets the requirements for GSM/EDGE and WCDMA standard.

• 한국군사과학기술학회지
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• 제15권4호
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• pp.450-457
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• 2012

In this paper, we designed low phase noise frequency synthesizer with compact size for High frequency band (Ku-band). The paper addresses merits and demerits of single loop and dual loop frequency synthesizer. The phase noise characteristics of the phase-locked loop frequency synthesizer were predicted based on the analysis for phase noise contribution of noise sources. The proposed model in this paper more accurately predicts the low phase noise frequency synthesizer with compact size for high frequency band.

• 한국정보통신학회논문지
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• 제6권8호
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• pp.1297-1304
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• 2002

본 논문에서는 저 위상잡음과 고출력 특성을 나타내는 Ku-대역 위상동기발진기를 설계하였다. 발진기소자의 비 선형 파라메터를 분석하여 위상잡음과 발진기출력에 영향을 주는 파라메터의 관계를 최적화시켜 저 위상잡음과 고 출력 특성을 절충되는 바이어스를 구하였다. 위상동기 발진기의 고 안정 특성을 위하여 전치분주형으로 설계하였으며 실험한 결과 위상동기된 상태에서 발진기출력은 10.17dBm이었으며 위상잡음은 13.25GHz에서 10KHz 떨어진 주파수에서 -82d3c/Hz을 보여 10dBm의 출력과 -84dBc/Hz@10KHz에 매우 근접함을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년 학술대회 논문집 정보 및 제어부문
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• pp.479-481
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• 2006

This paper describes a 2.5V, 320MHz low-noise and low-power Phase Locked Loop(PLL) using a noise-rejected Voltage Controlled ring Oscillator(VCO) fabricated in a TSMC 0.25um CMOS technology. In order to improve the power consumption and oscillation frequency of the PLL, The VCO consist of three-stage fully differential delay cells that can obtain the characteristic of high speed, low power and low phase noise. The VCO operates at 7MHz -670MHz. The oscillator consumes l.58mA from a 320MHz frequency and 2.5V supply. When the PLL with fully-differential ring VCO is locked 320MHz, the jitter and phase noise measured 26ps (rms), 157ps (p-p) and -97.09dB at 100kHz offset. We introduce and analysis the conditions in which ring VCO can oscillate for low-power operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.501-503
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• 2008

This paper presents the design of a 2.4 GHz low phase noise fully integrated LC Voltage-Controlled-Oscillator (VCO) in $0.18{\mu}m$ CMOS technology. The VCO is without any tail bias current sources for a low phase noise and, in which differential varactors are adopted for the symmetry of the circuit. At the same time, the use of differential varactors pairs reduces the tuning range, i.e., the frequency range versus VTUNE, so that the phase noise becomes lower. The simulation results show the achieved phase noise of -138.5 dBc/Hz at 3 MHz offset, while the VCO core draws 3.9mA of current from a 1.8V supply. The tuning range is from 2.28GHz to 2.55 GHz.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.155-159
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• 2003

This paper presents fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diode and tuning rage is $5.01{\sim}5.30$ GHz under $0{\sim}3 V$ control voltage. For good phase noise performance, LC filtering technique, common in Si CMOS process, is used, and to prevent degradation of phase noise performance by collector shot-noise and to reduce power dissipation the HBT is biased at low collector current density bias point. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is good performance. Moreover phase noise is improved by roughly 5 dEc by LC filter. It is the first experimental result in InGaP/GaAs HBT process. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.

• 한국정보통신학회논문지
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• 제6권2호
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• pp.151-158
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• 2002

본 논문에서는 저 위상잡음과 고안정 특성을 나타내는 디지털 MMDS용 위상고정 발진기를 설계하였으며 전압제어 발진기용 능동소자의 비선형 등가모델에 의하여 저 위상잡음 파라미터와 안정된 전압제어 발진기의 필요충분 조건을 분석하였다. 설계된 전압제어 발진기에 위상고정루프를 적용하여 위상고정 마이크로파 발진기를 구현하였으며 고안정 전압제어 발진기에 대하여 시뮬레이션한 결과 －90dBc/Hz @ 10KHz의 위상잡음을 보였으며 위상고정 마이크로파 발진기에 대한 실험 결과 －85dBc/Hz @ 10KHz의 위상잡음을 얻었다. 고안정도와 저 위상잡음특성을 나타내는 위상고정 마이크로파 발진기의 설계모델을 디지털 MMDS 단말기용 고안정 주파수 합성기로 응용할 수 있음을 보였다.

• Current Optics and Photonics
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• 제7권5호
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• pp.557-561
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• 2023

Ultralow-noise soliton pulse generation over a wider Fourier frequency range is highly desirable for many high-precision applications. Here, we realize a low-phase-noise soliton pulse generation by transferring the low phase noise of a mode-locked laser to a silica microcomb. A 21.956-GHz and a 9.9167-GHz Kerr soliton combs are synchronized to a 2-GHz and a 2.5-GHz mode-locked laser through a fractional optoelectronic phase-locked loop, respectively. The phase noise of the microcomb was suppressed by up to ~40 dB at 1-Hz Fourier frequency. This result provides a simple method for low-phase-noise soliton pulse generation, thereby facilitating extensive applications.

• 대한전자공학회논문지TC
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• 제41권2호
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• pp.53-58
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• 2004

본 논문에서는 부성저항을 갖는 발진부의 귀환 경로에 PIN 다이오드를 이용한 스위칭 회로를 추가하여 저 위상잡음 듀얼밴드 전압제어 발진기를 구현하였다. PIN 다이오드에 전원이 인가되지 않았을 때는 5㎓ 대역에서 발진이 일어나고, 인가되었을 때는 1.8㎓ 대역에서 발진이 일어난다. VCO의 위상잡음을 향상시키기 위하여 공진기에 PBG(Photonic Bandgap)구조를 접지 면에 적용하였다. 5.25㎓에서 출력 전력은 -9.17㏈m, 위상잡음은 -102㏈c/㎐이고, 1.8㎓에서 출력 전력은 -5.17㏈m, 위상잡음은 -101㏈c/㎐이다.