• Title/Summary/Keyword: Low on- resistance

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낮은 온저항과 칩 효율화를 위한 Unified Trench Gate Power MOSFET의 설계에 관한 연구 (Design of Unified Trench Gate Power MOSFET for Low on Resistance and Chip Efficiency)

  • 강이구
    • 한국전기전자재료학회논문지
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    • 제26권10호
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    • pp.713-719
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    • 2013
  • Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed $6,580{\mu}m{\times}5,680{\mu}m$ of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

소수성 특성을 이용한 저점도 AP 표면처리재의 현장 적용성 연구 (A Study on Field Applicability Evaluation of the Hydrophobic - Low Viscosity Surface Treatment Material for Pavement Preventive Maintenance)

  • 최준성
    • 한국도로학회논문집
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    • 제16권1호
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    • pp.31-39
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    • 2014
  • PURPOSES : Surface treatment material for pavement preventive maintenance should be inspected field applicability. This study(Part II) aimed to checkup coating characteristics and performance analysis using lab and field tests. The hydrophobic - low viscosity filling material for pavement preventive maintenance is presented in Part I, which is a series of companion study. METHODS : Relative comparison between general asphalt mixtures and surface treatment asphalt mixtures are analyzed and measured for the field application such as indirect tensile strength ratio(TSR), abrasion resistance, crack propagation resistance, temperature resistance, coating thickness, permeability resistance and skid resistance in terms of british pendulum number(BPN). RESULTS : It is found that TSR, crack propagation resistance and permeability resistance is increased as against uncoated asphalt specimen. Abrasion resistance and temperature resistance is secured from the initial coating thickness point of view, which is about 0.2~0.3mm. Skid resistance on the surface treatment pavement is satisfied with the BPN criteria of national highway because of exposed aggregate and crack sill induced pavement deterioration and damage cracks. CONCLUSIONS : The hydrophobic - low viscosity surface treatment material for pavement preventive maintenance is validated on field applicability evaluation based on quantitative analysis of coating thickness and performance analysis using lab and field tests.

낮은 저항과 열안정성을 가지는 Cu/Mn 합금저항의 전기적 특성 (Electrical Properties of Cu/Mn Alloy Resistor with Low Resistance and Thermal Stability)

  • 김은민;김성철;이선우
    • 한국전기전자재료학회논문지
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    • 제29권6호
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    • pp.365-369
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    • 2016
  • In this paper, we fabricated Cu/Mn alloy shunt resistor with low resistance and thermal stability for use of mobile electronic devices. We designed metal alloy composed of copper (Cu) and manganese (Mn) to embody in low resistance and low TCR which are conflict each other. Cu allows high electrical conductivity and Mn serves thermal stability in this Cu/Mn alloy system. We confirmed the elemental composition of the designed metal alloy system by using energy dispersive X-ray (EDX) analysis. We obtained low resistance below $10m{\Omega}$ and low temperature coefficient of resistance (TCR) below $100ppm/^{\circ}C$ from the designed Cu/Mn alloy resistor. And in order to minimize resistance change caused by alternative frequency on circuit, shape design of the metal alloy wire is performed by rolling process. Finally, we conclude that design of the metal alloy system was successfully done by alloying Cu and 3 wt% of Mn, and the Cu/Mn alloy resistor has low resistance and thermal stability.

저전압 VDMOS의 ON-저항 모델 (An Advanced Model of on-Resistance for Low Voltage VDMOS Devices)

  • 김일중;김성동;최연익;한민구
    • 대한전기학회논문지
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    • 제41권3호
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    • pp.267-273
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    • 1992
  • An advanced on-resistance model of VDMOS devices in the low voltage regimes is proposed and verified by 2-D device simulations. The model considers the lateral gaussian doping profiles in the channel region and exact current spreading angles in the epitaxial layer for both linear and cellular geometries by employing the conformal mapping, It is found out that the on-resistance of low voltage VDMOS may be overestimated considerably if it is analyzed by the conventional method. The 2-D device simulation results show that the proposed model is valid for the VDMOS devices in the low voltage regimes.

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저압다심케이블에서 충진물(개재물)이 절연저항에 미치는 영향 분석 (The Analysis of change of insulation resistance by filler on low voltage multi core cables)

  • 고영훈;박의석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.71-72
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    • 2007
  • The insulation is a important part of cable. In thisb paper, measured the insulation resistance for analysing of change of insulation resistance by filler on low voltage multicore cables. The insulation resistance is not effected by only insulation material, but also filler material. The insulation resistance is different with measuring before filling and after filling by filler. When develope the new filler or cable, the volume resistance of filler must be considered.

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Effect of Resistance Exercise Intensity on the Strength and Lymphedema of Upper Extremity in Patients with Breast Cancer

  • So, Hyun-Jeong;Shin, Won-Seob
    • The Journal of Korean Physical Therapy
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    • 제27권5호
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    • pp.339-344
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    • 2015
  • Purpose: The purpose of this study was to determine the effects of high and low resistance exercise using an elastic band on the strength and lymphedema of upper extremity in patients with breast cancer. Methods: Seventeen female patients with breast cancer related lymphedema were randomly allocated to the high (n=9) or low (n=8) resistance exercise group. Both groups participated in the elastic band exercise program three times a week for eight weeks. For the high resistance exercise group (HR), the resistance was gradually increased, while maintaining constant intensity of exercise for the low resistance exercise group (LR). Assessments made include the upper extremity muscle strength and lymphedema before and after training. Results: After the exercise program, the HR showed significantly improved shoulder flexion and elbow flexion strength variation compared to the LR (p<0.05). Upper arm edema rate was significantly decreased in HR (p<0.05), but the difference between the two groups was not significant. Conclusion: These findings suggest that the elastic band exercise helps improve the strength and lymphedema of upper extremity in patients with breast cancer. In particular, high resistance exercise is more effective in improving muscle strength and does not exacerbate lymphedema, rather may improve upper arm edema if it is applied with a low elastic bandage or compression sleeve.

비 Froude수에 있어서 선체의 조파저항 (Wave Resistance of a Ship at Low Froude Numbers)

  • 김인철
    • 수산해양기술연구
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    • 제17권2호
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    • pp.109-113
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    • 1981
  • Most existing theories on ship waves and wave resistance are based on the perturbation of the flow field by a small pararr.eter which specifies the slenderness of the ship hull. Since however, ship hulls in practice are neither so slender nor thin enough to secure the validity of the linearized theory, the agreen:ent between the theoretical prediction and the experimental result is not generally satisfactory. The author pointed out that the contribution by the non-linear term in the free surface condition can be represented by sorr.e source distribution over the still water plane. This paper leads to a forrr.ula for the wave resistance of not slender ships at low Froude nurr.bers. and deals with the asynptotic expression. As a nurr.erical example, the wave resistance of Wigley model is calculated, and the result is compared with experimental values. It is concluded that the wave resistance coefficient varies in the rate of Fn6 at low speed limit in general. A comparison with the result derived from the linearized free surface condition shows that the non-linearity of the free surface is irr portant at low speed.

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가스보일러용 STS 304의 부식특성에 미치는 용수의 비저항의 영향 (Effect of the Specific Resistance of Water on Corrosion Characteristics of STS 304 for Gas Boiler)

  • 임우조;김환식;윤병두
    • 수산해양교육연구
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    • 제19권3호
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    • pp.323-328
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    • 2007
  • This paper was studied on the effect of the specific resistance of water on corrosion characteristics of STS 304 for gas boiler. The electrochemical polarization test of STS 304 for gas boiler was carried out. And the polarization resistance, uniform corrosion, corrosion behavior by impressed potential and corrosion sensitivity of STS 304 with specific resistance were considered. The main results are as following: 1) With being low the specific resistance of water, the polarization resistance and corrosion potential of STS 304 decreases, while corrosion current density increases. 2) Under constant impressed potential, the corrosion sensitivity of STS 304 is large with being low the specific resistance due to synergy effect of Cl ion.

저전압에서의 통전전류를 이용한 인체의 동저항 측정 및 예측 (Measurement and Estimation of Dynamic Resistance of the Human Body Using Body Current at Low-Voltage Levels)

  • 김두현;강동규;김상철
    • 한국안전학회지
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    • 제16권1호
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    • pp.37-42
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    • 2001
  • The severity of electric shock is entirely dependent on body resistance. When the human body becomes a part of electric circuit, the body resistance is given as a function of shock scenario. Factors which consist of applied voltage, shock duration, body current path and contact area, etc.. The body resistance is defined as the voltage applied to subjects divided by the body current. To secure safety of the subjects, the experiment is conducted on 10 subjects, the body current is limited to 4mA. And only three factors under many shock scenario conditions are used to determine the body resistance. The three factors are the applied voltage, the current pathway and the contact area. The object of this work is to estimate the dynamic resistance of the human body as a function of applied voltage using the body current at low-voltage levels. The data of the body current at low-voltage levels are extrapolated to high-voltage levels using two analytic functions with specified constants calculated by numerical method. Also we can provide permissible body voltage for various copper electrodes on the basis of the data determined with the dynamic resistance and the body current.

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Organic photovoltaic cells using low sheet resistance of ITO for large-area applications

  • 김도근;강재욱;김종국
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.5.1-5.1
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    • 2009
  • Organic photovoltaic (OPV)cells have attracted considerable attention due to their potential for flexible, lightweight, and low-cost application of solar energy conversion. Since a 1% power conversion efficiency (PCE) OPV based on a single donor-acceptor heterojunction was reported by Tang, the PCE has steadily improved around 5%. It is well known that a high parallel (shunt)resistance and a low series resistance are required simultaneously to achieve ideal photovoltaic devices. The device should be free of leakage current through the device to maximize the parallel resistance. The series resistance is attributed to the ohmic loss in the whole device, which includes the bulk resistance and the contact resistance. The bulk resistance originated from the bulk resistance of the organic layer and the electrodes; the contact resistance comes from the interface between the electrodes and the active layer. Furthermore, it has been reported that the bulk resistance of the indium tin oxide (ITO) of the devices dominates the series resistance of OPVs for a large area more than $0.01\;cm^2$. Therefore, in practical application, the large area of ITO may significantly reduce the device performance. In this work, we investigated the effect of sheet resistance ($R_{sh}$) of deposited ITO on the performance of OPVs. It was found that the device performance of polythiophene-fullerene (P3HT:PCBM) bulk heterojunction OPVs was critically dependent on Rsh of the ITO electrode. With decreasing $R_{sh}$ of the ITO from 39 to $8.5\;{\Omega}/{\square}$, the fill factor (FF) of OPVs was dramatically improved from 0.407 to 0.580, resulting in improvement of PCE from $1.63{\pm}0.2$ to $2.5{\pm}0.1%$ underan AM1.5 simulated solar intensity of $100\;mW/cm^2$.

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