• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.126-130
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• 2011

In this study, off-axis magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about $120^{\circ}C$ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The ITO thin films grown on PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. 58-nm thick ITO films showed a resistivity of about $2{\times}10-4{\Omega}{\cdot}cm$ and a transmittance of about 75% at a wavelength of 550 nm. The transmittance of the ITO thin films by an insertion of SiO2 thin films on ITO films was improved.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.14 no.6
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• pp.110-116
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• 2015

In this paper, a compact low-loss reflector-type phase shifter with harmonic suppression using meander T-shaped branch-line coupler is suggested. The compact coupler for the phase shifter has a size of $22.2{\times}14.9mm^2$ while a conventional branch coupler has a size of $32.6{\times}27.8mm^2$. The phase shifter shows insertion losses of 0.19-0.28 dB at the center frequency of 2.1 GHz, and a measured maximum phase shift of $137^{\circ}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.166-176
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• 2007

Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.511-519
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• 2016

This paper proposes a CMOS 6-bit phase shifter with low RMS phase and amplitude errors for an X-band phased array antenna. The phase shifter combines a switched-path topology for coarse phase states and a switch-filter topology for fine phase states. The coarse phase shifter is composed of phase shifting elements, single-pole double-throw (SPDT), and double-pole double-throw (DPDT) switches. The fine phase shifter uses a switched LC filter. The phase coverage is $354.35^{\circ}$ with an LSB of $5.625^{\circ}$. The RMS phase error is < $6^{\circ}$ and the RMS amplitude error is < 0.45 dB at 8-12 GHz. The measured insertion loss is < 15 dB, and the return losses for input and output are > 13 dB at 8-12 GHz. The input P1dB of the phase shifter achieves > 11 dBm at 8-12 GHz. The current consumption is zero with a 1.2-V supply voltage. The chip size is $1.46{\times}0.83mm^2$, including pads.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1065-1072
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• 2012

In this paper, the method of design of the waveguide band-pass filter and limiter in radar system is proposed. First, we design a self-resonant iris, which can behave as a band-pass filter by mounting the PIN diode on the iris. When low power microwave is incident on the proposed element, the element behaves as a band-pass filter. Under a high power microwave condition, however, the element behaves as a limiter having wide band stop characteristics. The fabricated element has a pass band with -0.7 dB insertion loss at 10 GHz under the low power condition and isolation about 25 dB under the high power condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.193-193
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• 2008

In this paper, a MMIC diplexer with a low pass and high pass filter are designed and fabricated using an InGaP/GaAs process. The design of this diplexer is based on its stabilization of the low insertion loss since it is important in the in-building system (IBS). The IBS integrates wire and wireless signal between the cable television (CATV) and the personal communication system. In this design, a dual-mode operation of diplexer is fabricated with the frequency of 0 Hz to 900 MHz and 1.7 GHz to 2.2 GHz for CATV and personal communication. respectively. The topolygy of the designed diplexer is based on the L-C filter. This diplexer fabricated by nanoENS Inc. which is foundry service company, was measured by using the facilities of the Kwangwoon University RFIC center. The fabricated chip size is $1.6\times1.4mm^2$ and it has abroad frequency range from 0 Hz to 2.2 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.1
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• pp.55-60
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• 2010

For battery-powered device applications, which grow rapidly in the electronic market today, low-power becomes one of the most important design issues of CMOS VLSI circuits. A multi-VDD system, which uses more than one power-supply voltage in the same system, is an effective way to reduce the power consumption without degrading operating speed. However, in the multi-VDD system, level converters should be inserted to prevent a large static current flow for the low-to-high conversion. The insertion of the level converters induces the overheads of power consumption, delay, and area. In this paper, we propose a new level converter which can provide the level up/down conversions for the various input and output voltages. Since the proposed level converter uses only one power-supply voltage, it has an advantage of reducing the complexity in physical design. In addition, the proposed level converter provides lower power and higher speed, compared to existing level converters.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.306-311
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• 1999

$La_{2/3}Sr_{1/3}MnO_3(LSMO)/YSZ/SiO_2/Si(100)$ polycrystalline thin films were fabricated be chelated sol-gel method The effect of YSZ buffer layer at low field (120 Oe) spin-polarized tunneling magnetotransport (TMR) properties of LSMO thin film was studied at room temperature. Single perovskite LSMO thin films was obtained. The maximum TMR ratio was increased from 0.2 to 0.42 % by the insertion of YSZ buffer. YSZ as diffusion barrier was attributed to the fine microstructure of LSMO thin films and the reduction of dead layer between LSMO and $SiO_2/Si(100)$ interfaces.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.8A
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• pp.607-612
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• 2003

In this paper, a miniaturized parallel coupled bandpass filter using multi-layered LTCC(Low Temperature Co-fired Ceramics) substrate for SOP(System-On-Package) is proposed for applications to wireless communication systems. The fabricated BPF is composed of five 106$\mu\textrm{m}$ thick LTCC layers and its size is 5.24mm ${\times}$ 4.3mm${\times}$ 0.53mm. The measured characteristics of the BPF show the center frequency of 5.8GHz, bandwidth of 200㎒, insertion loss of 2.326㏈ and return loss of 13.679㏈. In addition, the attenuation is 28.052㏈ at 4.7GHz.

• Journal of Sensor Science and Technology
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• v.25 no.1
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• pp.8-12
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• 2016

A planar, light-weight, and low-cost notch filter structure is required for the KSTAR ECEI (Electron Cyclotron Emission Imaging) system to protect the mixer arrays from spurious plasma heating power. Without protection, this heating power can significantly degrade or damage the performance of the mixer array. To protect mixer arrays, a frequency selective surface (FSS) structure is the suitable choice as a notch filter to reject the spurious heating power. The FSS notch filter should be located between the lenses of the ECEI system. This paper presents a 170 GHz FSS notch filter for the KSTAR ECEI sensor application. The design of such an FSS notch filter is based on the single-sided square loop geometry, because that makes it relatively insensitive to the incident angle of incoming wave. The FSS notch filter exhibits high notch rejection with low pass-band insertion loss over a wide range of incident angles. This paper also reviews the simulated and measured results. The proposed FSS notch filter might be implemented in other millimeter-wave plasma devices.