• Korean Journal of Optics and Photonics
• /
• v.16 no.3
• /
• pp.235-238
• /
• 2005

A Multiple electron beam lithography system with arrayed microcolumns has been developed for high throughput applications. The small size of the microcolumn opens the possibility for arrayed operation on a scale commensurate. The arrayed microcolumns based on of Single Column Module (SCM) concept has been fabricated and successfully demonstrated. Low energy microcolumn lithography has been operated in the energy range from 250 eV to 300 eV for the generation of nano patterns. Probe beam current at the sample was measured about >1 nA at a total beam current of $0.5\;{\mu}A$ and a working distance of $\~1\;mm$. The magnitude of probe beam current is strong enough for the low energy lithography. The thin layers of PMMA resist have been employed. The results of nano-patterning by low energy microcolumn lithography will be discussed.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.9 no.1
• /
• pp.23-28
• /
• 2008

Due to the modem MEMS technologies, the electron lenses that are used in the microcolumn can have much smaller optical aberrations compared with conventional electron lenses for the bulky electron columns. Since the electron lens system have great effect on the performance of the microcolumn, it is important to study the dependence of image quality on the configuration of the electronic imaging system, among which the source-lens part is most sensitive. In this work, we investigated the electron beam characteristics according to the shapes of extractor and limiting aperture that are elements of the source-lens part. By analyzing the data obtained, we proposed the optimum configuration of the electron lens system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.528-529
• /
• 2008

A new concept based on sample current measurements for detecting of via-hole defects on wafer has been performed by low energy electron beam microcolumn. The microcolumn has been operated at a low voltage of 290 eV with total emission current of 400 nA, and a sample current of 6 nA. The test sample was fabricated with SiO2 layer of 300 nm thickness on a piece of a silicon substrate. Preliminary results of both sample current method and secondary electron method show microcolumn and its control can be useful technology for detecting of via-hole defects on wafer.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.4
• /
• pp.29-37
• /
• 2021

A 7 nm technology node using extreme ultraviolet lithography with a wavelength of 13.5 nm has been recently developed and applied to the semiconductor manufacturing process. Furthermore, the development of sub-3 nm technology nodes continues to be required. In this study, design factors of an electrostatic deflector for an ultra-miniaturized microcolumn system that can realize an electron wavelength of below 1.23 nm with an acceleration voltage of above 1 eV were investigated using a three-dimensional simulator. Particularly, the optimal design of the electrostatic octupole floating deflector was derived by optimizing the design elements and improving the driving method of the 1 keV low energy ultra-miniaturized microcolumn deflector. As a result, the entire wide field of view greater than 330 ㎛ at a working distance of 4 mm was realized with an ultra-high-resolution electron beam spot smaller than 10 nm. The results of this study are expected to be a basis technology for realizing a wafer-scale multi-array microcolumn system, which is expected to innovatively improve the throughput per unit time, which is the biggest drawback of electron beam lithography.

• Korean Journal of Optics and Photonics
• /
• v.18 no.6
• /
• pp.426-431
• /
• 2007

We have fabricated a magnetic micro-deflector for a microcolumn system and tested its performance by operating it in the low energy region. The micro-deflector is composed of Cu coils around cylindrical cores with $500{\mu}m$ diameter. The diameter of the Cu coil itself is $100{\mu}m$. Two pairs of deflectors designed for a 2-dimensional scan, that is X and Y deflection, are fixed on an insulating plate. The low power performance of a magnetic micro-deflector attached to a microcolumn system has been tested and the magnitude of deflection is measured to be ${\sim}100{\mu}m/A$, which offers the possibility for practical applications of the magnetic micro-deflector.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.12 no.4
• /
• pp.1803-1811
• /
• 2011

We have analyzed the electrical defect detection mechanism using low energy microcolumn on the TFT substrate for TFT-LCD. In this study, we have acquired the SEM images of the various pixel defects for 7-inch TFT substrate by scanning of low energy electron beam in the high vacuum chamber. Futhermore, we have interpreted the defect detection mechanism through the correlations between the SEM images and electrical behaviors of the defective pixels. As a result, we obtained consistent results as the follows. We can confirm that the SEM images using low energy electron beam are significantly affected by the space charge effect.

• Journal of the Korean Magnetics Society
• /
• v.17 no.4
• /
• pp.178-181
• /
• 2007

Electron beam lithography has been studied as a next-generation lithography technology instead of photo lithography for ULSI semiconductor devices. In this work, we have made a low-energy electron beam lithography system based on the microcolumn and investigated the dependence of the pattern thickness on the energies and dose concentration of the electron beam. We have also demonstrated the potential of low-energy lithography by achieving 100 nm-$SiO_2$ thin film patterning.