Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
- /
- Pages.528-529
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- 2008
Development of microcolumn control unit to detect of via-hole defects on wafer
반도체소자의 Via hole 결함 측정을 위한 전자컬럼 제어기술 개발
- Roh, Young-Sup (Seoul University of Venture and Information) ;
- Kim, Heung-Tae (Seoul University of Venture and Information) ;
-
Kim, H.S.
(Sun Moon University)
;
-
Kim, D.W.
(Sun Moon University)
;
-
Ahn, S.J.
(Sun Moon University)
;
- Kim, Y.C. (Sun Moon University) ;
- Jin, S.W. (CEBT Co. Ltd.) ;
- Whang, N.W. (CEBT Co. Ltd.)
- 노영섭 (서울벤처정보대학원대학교 임베디드시스템학과) ;
- 김흥태 (서울벤처정보대학원대학교 임베디드시스템학과) ;
-
김호섭
(선문대학교 신소재과학과)
;
-
김대욱
(선문대학교 신소재과학과)
;
-
안승준
(선문대학교 신소재과학과)
;
- 김영철 (선문대학교 신소재과학과) ;
- 진상원 (전자빔기술센터(주)) ;
- 황남우 (전자빔기술센터(주))
- Published : 2008.06.19
Abstract
A new concept based on sample current measurements for detecting of via-hole defects on wafer has been performed by low energy electron beam microcolumn. The microcolumn has been operated at a low voltage of 290 eV with total emission current of 400 nA, and a sample current of 6 nA. The test sample was fabricated with SiO2 layer of 300 nm thickness on a piece of a silicon substrate. Preliminary results of both sample current method and secondary electron method show microcolumn and its control can be useful technology for detecting of via-hole defects on wafer.