• 제목/요약/키워드: Low acceleration voltage

검색결과 47건 처리시간 0.036초

Fabrication and characterization of CaLa2ZnO5 based nanocrystalline materials

  • Hussain, Sk. Khaja;Raju, G. Seeta Rama;Yu, Jae Su
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.352.2-352.2
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    • 2016
  • In recent times, much effort has been concentrated on trivalent rare-earth ions activated ceramics or oxide phosphors to develop display industries due to their promising applications in optoelectronic devices and field-emission displays. To prepare efficient phosphors, citrate sol-gel method is one of the best synthetic methods. Green and blue emissive CaLa2ZnO5:RE3+ nanocrystalline materials are synthesized by a citrate sol-gel method. After the samples annealing at $1100^{\circ}C$, morphological and structural properties are investigated by scanning electron microscope images and X-ray diffraction patterns, respectively. At low electron beam voltage of <5 kV, the visible photoluminescence properties are obtained. Various concentrations of the RE3+ ions exhibited their characteristic emission peaks at different excitation wavelengths, respectively. Similarly, at high electron beam anodic voltage, the cathodoluminescence properties are studied as a function of acceleration voltage and filament current. The chromaticity coordinates are calculated for the optimized CaLa2ZnO5 nanocrystalline luminescent materials.

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Ion Mass Doping 법을 이용한 Phosphorus 주입된 실리콘 박막의 Annealing 특성 (Annealing Characteristic of Phosphorus Implanted Silicon Films using an Ion Mass Doping Method)

  • 강창용;최덕균;주승기
    • 한국표면공학회지
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    • 제27권4호
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    • pp.234-240
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    • 1994
  • A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

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Electromagnetic energy harvesting from structural vibrations during earthquakes

  • Shen, Wenai;Zhu, Songye;Zhu, Hongping;Xu, You-lin
    • Smart Structures and Systems
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    • 제18권3호
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    • pp.449-470
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    • 2016
  • Energy harvesting is an emerging technique that extracts energy from surrounding environments to power low-power devices. For example, it can potentially provide sustainable energy for wireless sensing networks (WSNs) or structural control systems in civil engineering applications. This paper presents a comprehensive study on harvesting energy from earthquake-induced structural vibrations, which is typically of low frequency, to power WSNs. A macroscale pendulum-type electromagnetic harvester (MPEH) is proposed, analyzed and experimentally validated. The presented predictive model describes output power dependence with mass, efficiency and the power spectral density of base acceleration, providing a simple tool to estimate harvested energy. A series of shaking table tests in which a single-storey steel frame model equipped with a MPEH has been carried out under earthquake excitations. Three types of energy harvesting circuits, namely, a resistor circuit, a standard energy harvesting circuit (SEHC) and a voltage-mode controlled buck-boost converter were used for comparative study. In ideal cases, i.e., resistor circuit cases, the maximum electric energy of 8.72 J was harvested with the efficiency of 35.3%. In practical cases, the maximum electric energy of 4.67 J was extracted via the buck-boost converter under the same conditions. The predictive model on output power and harvested energy has been validated by the test data.

Enhancement of Power System Transient Stability and Power Quality Using a Novel Solid-state Fault Current Limiter

  • Fereidouni, A.R.;Vahidi, B.;Mehr, T. Hoseini;Doiran, M. Garmroodi
    • Journal of Electrical Engineering and Technology
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    • 제6권4호
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    • pp.474-483
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    • 2011
  • Solid-state fault current limiters (SSFCL) in power systems are alternative devices to limit prospective short circuit currents from reaching lower levels. Fault current limiters (FCL) can be classified into two categories: R-type (resistive) FCLs and L-type (inductive) FCLs. L-type FCL uses an inductor to limit fault level and is more efficient in suppressing voltage drop during a fault. In contrast, R-type FCL is constructed with a resistance and is more effective in consuming the acceleration energy of generators during a fault. Both functions enhance the transient stability of the power system. In the present paper, a novel SSFCL is proposed to enhance power system transient stability and power quality. The proposed SSFCL uses both functions of an L-type and R-type FCL. SSFCL consists of four diodes, one self-turn-off IGCT, a current-limiting by-pass inductor (L), and a variable resistance parallel with an inductor for improvement of power system stability and prevention of over-voltage across SSFCL. The main advantages of the proposed SSFCL are the simplicity of its structure and control, low steady-state impedance, fast response, and the existence of R-type and Ltype impedances during the fault, all of which improve power system stability and power quality. Simulations are accomplished in PSCAD/EMTDC.

Excitation Based Tunable Emissions from the Nanocrystalline $Ca_2Gd_8Si_6O_{26}$ : $Sm^{3+}/Tb^{3+}$ Phosphors for Novel Inorganic LEDs

  • Raju, G. Seeta Rama;Yu, Jae-Su
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.156-156
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    • 2011
  • Nanocrystalline $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were prepared by solvothermal reaction method for light emitting diode (LED) and field emission display (FED) applications. The XRD patterns of these phosphors confirmed their oxyapatite structure in the hexagonal lattice. The visible luminescence properties of these phosphors were investigated by exciting with ultraviolet (UV) or near-UV light and low voltage electron beam. The photoluminescence (PL) properties of $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were investigated as a function of $Sm^{3+}$ concentration. Cathodoluminescence (CL) properties were examined by changing the acceleration voltage. The CGS : $Sm^{3+}$ showed the dominant orange emission due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ transition. The CGS : $Tb^{3+}/Sm^{3+}$ phosphor showed the green, white and orange emissions when excited with 275, 378, and 405 nm wavelengths, respectively. The chromaticity coordinates of these phosphors were comparable to or better than those of standard phosphors for LED or FED devices.

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인체보행 시 양발에 가해지는 압력분포를 통한 자세 뒤틀림 측정 및 분석 (Posture for Distortion Measurement and Analysis Through the Pressure Distribution During a Person Walking)

  • 홍주희;김경호
    • 전기학회논문지
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    • 제65권3호
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    • pp.487-492
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    • 2016
  • In this paper, a device for analyzing the pressure distribution during walking was produced by using the pressure sensor on the heel. This device was limited to a frequency band by using the 1st low-pass filter. And an algorithm to analyze the value of the quantity to pressure using a analog to digital converter. It is used by using the threshold voltage of pressure sensor, it is suggested the algorithm. The algorithm is detected the peak which is exceeded the threshold voltage. and thus in accordance, it is detected the number of steps. And the calorie consumption were detected by using it. Also it used an MCU and Bluetooth. And by confirming the data at the LCD of the other MCU, it was to reduce the size of the device. According to this algorithm, it has the advantage that there is no restriction on the activity than when using an imaging device and it is inexpensive than other sensors such as an acceleration sensor or a gyro and it is easy to handle.

전자식 점화안전장치 회로부 설계 및 검증 (The Design and Test of the Electronic Arm Fire Device Circuit)

  • 김학성;황정민;장승교;김재훈;황대규
    • 한국군사과학기술학회지
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    • 제21권6호
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    • pp.857-864
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    • 2018
  • This paper describes about the circuit design and test of the electronic Arm Fire Device. Electronic arm fire device consists of igniter, circuit and housing case and it operates without the actuator such as torque motor or solenoid. A high-voltage DC-DC converter was used to generate the voltage for initiating the LEEFI(Low Energy Exploding Foil Initiator). The MEMS switch was used to detect the acceleration that occurs when missile is launched, and the circuit was designed considering the size, performance, and specification of the electronic devices. The performance test was conducted to verify the designed circuit and we confirmed that it operates well.

퍼지관리제어기법을 이용한 스마트 면진 벤치마크 건물의 제어 (Control of Smart Base-isolated Benchmark Building using Fuzzy Supervisory Control)

  • 김현수
    • 한국지진공학회논문집
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    • 제9권4호
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    • pp.55-66
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    • 2005
  • 본 논문에서는 스마트 면진장치를 효과적으로 제어하기 위하여 퍼지관리제어기를 개발하였고 그 효율성을 검토하였다. 이를 위하여 1세대 스마트 면진 벤치마크 건물을 이용하여 수치해석을 수행하였다. 대상 벤치마크 구조물은 부정형의 평면을 가지고 있는 8층 건물이고 탄성베어링과 MR 감쇠기로 이루어진 스마트 면진장치가 설치되어 있다. 본 논문에서는 다목적 유전자 알고리즘을 이용하여 원거리 지진과 근거리 지진에 대하여 각각 면진구조물을 효과적으로 제어할 수 있는 하위 퍼지제어기를 개발한다. 최적화과정에서는 구조물의 최대 및 RMS 가속도와 면진층 변위의 저감이 목적으로 사용된다. 벤지마크 건물에 지진하중이 가해지면 두 개의 하위 퍼지제어기에서는 각각 다른 명령전압이 제공되는데 이 명령전압들은 퍼지관리제어기의 추론과정에 기반하여 실시간으로 참여율이 조절되어 하나의 명령전압으로 조합된다. 수치해석을 통하여 제안된 퍼지관리제어기법을 사용함으로써 상부구조물의 응답과 면진층의 변위를 효과적으로 줄일 수 있음을 확인할 수 있다.

Dependence of Thermal Annealing Conditions on Photoluminescence in $SiO_2$ films

  • Lee, Jae-Hee;Lee, Weon-Sik;Kim, Kwang-Il
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.102-102
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    • 1999
  • Visible photoluminescence(PL) in si-implanted SiO2 films on crystaline silicon were observed. Thermal oxide films of 1 ${\mu}{\textrm}{m}$ thickness on P-type crystal silicon were made and si+ ions were implanted with 200keV acceleration voltage on ti. Argon laser (wavelength 488nm) and PM tube were used for PL measurements. As annealing time increased at low temperature, the visible PL intensity are increased and the peak positions are changed. On the other hand, with increasing annealing time at high temperature, the visible PL intensity are disappeared. From the PL peaks and intensity changes, XRD results, and TEM observations, we will discuss the origin of PL in Si+-implanted SiO2 films with oxygen righ defects and silicon rich defects.

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$\mu$-Step 구동방식에 의한 LPM의 제어 (LPM Control by $\mu$-Step drive method)

  • 백수현;윤신용;김용;임태빈;김철진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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    • pp.287-289
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    • 1995
  • In this paper, We applied the $\mu$-stepping method on the Phase Excitation Sequence of Hybrid type LPM. Linear Pulse Motor can opeate in an open loop control as an effective positioning actuator. PWM driver was used for low power loss and automatically adjusted voltage at rate current. Finally we find that through the position-velocity for timing Triangular and Trapezoidal Profile are very affected by velocity and acceleration parameter.

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