• Fibers and Polymers
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• 제6권2호
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• pp.169-173
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• 2005

Low temperature plasma (LTP) treatment was applied to wool fabric with the use of a non-polymerizing gas, namely oxygen. After the LTP treatment, the fabric properties including low-stress mechanical properties, air permeability and thermal properties, were evaluated. The low-stress mechanical properties were evaluated by means of Kawabata Evaluation System Fabric (KES-F) revealing that the tensile, shearing, bending, compression and surface properties were altered after the LTP treatment. The changes in these properties are believed to be related closely to the inter-fiber and inter-yam frictional force induced by the LTP. The decrease in the air permeability of the LTP-treated wool fabric was found to be probably due to the plasma action effect on increasing in the fabric thickness and a change in fabric surface morphology. The change in the thermal properties of the LTP-treated wool fabric was in good agreement with the above findings and can be attributed to the amount of air trapped between the yams and fibers. This study suggested that the LTP treatment can influence the final properties of the wool fabric.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.421-421
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• 2012

Graphene has drawn enormous attention owing to its outstanding properties, such as high charge mobility, excellent transparence and mechanical property. Synthesis of Graphene by chemical vapor deposition (CVD) is an attractive way to produce large-scale Graphene on various substrates. However the fatal limitation of CVD process is high temperature requirement(around $1,000^{\circ}C$), at which many substrates such as Al substrate cannot endure. Therefore, we propose plasma enhanced CVD (PECVD) and decrease the temperature to $400^{\circ}C$. Fig. 1 shows the typical structure of RF-PECVD instrument. The quality of Graphene is affected by several variables. Such as plasma power, distance between substrate and electronic coil, flow rate of source gas and growth time. In this study, we investigate the influence of these factors on Graphene synthesis in vacuum condition. And the results were checked by Raman spectra and conductivity measurement.

• 한국염색가공학회지
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• 제17권5호
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• pp.26-36
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• 2005

This study was carried to evaluate mechanical characteristics of Poly(ethylene terephthalate) fabrics (by Kawabata evaluation system(KES)) which was systematically treated with $O_2$ low temperature plasma and chitosan acetate solution. Furthermore, surface structure was investigated by SEM, AFM, air permeability and wettability. Tensile energy(WT), shear rigidity(G) and surface roughness(MIU) properties calculated by KES-FB have increased with increasing plasma treatment time, while bending rigidity(G) and energy of compression(WC) value were decreased compared with those of the untreated. SEM photographs showed the identification of chitosan coating but did not confirm the plasma etching structure. Air permeability was decreased according to plasma treatment time with increasing concentrations of chitosan. The water absorption rate made rapid progress by chitosan treatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.433-433
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• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.519-522
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• 2002

In this paper, we analyze the impact of plasma etching process induced device degradation on low temperature poly-Si TFTs. The results indicate the relationship between device degradation and PPID effect during plasma fabrication. The dual-gate structure, which is used to suppress leakage current, is also discussed in this research.

• 대한금속재료학회지
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• 제47권11호
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• pp.716-721
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• 2009

The major drive for the application of low-temperature plasma treatment in nitrocarburizing of austenitic stainless steels lies in improved surface hardness without degraded corrosion resistance. The low-temperature plasma nitrocarburizing was performed in a gas mixture of $N_{2}$, $H_{2}$, and carbon-containing gas such as $CH_{4}$ at $450^{\circ}C$. The influence of the processing time (5~30 h) and $N_{2}$ gas composition (15~35%) on the surface properties of the nitrocarburized layer was investigated. The resultant nitrocarburized layer was a dual-layer structure, which was comprised of a N-enriched layer (${\gamma}_N$) with a high nitrogen content on top of a C-enriched layer (${\gamma}_C$) with a high carbon content, leading to a significant increase in surface hardness. The surface hardness reached up to about $1050HV_{0.01}$, which is about 4 times higher than that of the untreated sample ($250HV_{0.01}$). The thickness of the hardened layer increased with increasing treatment time and $N_{2}$ gas level in the atmosphere and reached up to about $25{\mu}m$. In addition, the corrosion resistance of the treated samples without containing $Cr_{2}N$ precipitates was enhanced than that of the untreated samples due to a high concentration of N on the surface. However, longer treatment time (25% $N_{2}$, 30 h) and higher $N_{2}$ gas composition (35% $N_{2}$, 20 h) resulted in the formation of $Cr_{2}N$ precipitates in the N-enriched layer, which caused the degradation of corrosion resistance.

• 전기학회논문지
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• 제65권10호
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• pp.1706-1711
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• 2016

Electromagnetic wave simulation was performed to predict characteristics of manufactured cutoff probe at low temperature magnetized plasma medium. Microwave cutoff probe is designed for research the properties of magnetized inductively coupled plasma. It was shown that the cutoff probe method can safely be used for weakly magnetized high density plasma sources. Cutoff probe system with two port network analyzer has been prepared and applied to measure electron density distributions in large area, 13.56MHz driven weakly magnetized inductively coupled plasma source. The results shown that, the plasma frequency confirmed cut-off characteristics in low temperature plasma. Especially, cut-off characteristics was found at upper hybrid resonance frequency in the environment of the magnetic field. In case of a induced weak magnetic field in inductively coupled plasma, plasma density estimated from the cutoff frequency in the same way at unmagnetized plasma due to nearly same plasma frequency and upper hybrid resonance frequency. The plasma density is increased and uniformity is improved by applying a induced weak magnetic field in inductively coupled plasma.

• 한국염색가공학회지
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• 제6권4호
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• pp.27-33
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• 1994

Wool fabrics were treated with low temperature oxygen plasma and/or protease, and examined for their mechanical and dyeing properties. By plasma-treatment the strength of wool fabric increased and higher rate of weight loss for protease treatment was obtained. When dyed by levelling type acid dye equilibrium dye uptake appeared same, but rate of dyeing increased by the plasma treatment, while, with milling type acid dye, both of them increased greatly in the order of untreatedplasma/protease-treated. It was assumed from the above results that plasma affects the surface of fiber, and enzyme attacks mainly the inner part of fiber. This was confirmed again by scanning electron microscope.

• 천문학회보
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• 제38권1호
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• pp.60.2-60.2
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• 2013

We investigate several eruptive hot plasma observations by Hinode/XRT. Their corresponding EUV and/or white light CME features are visible in some events. Using those observations, we determine the mass constraints of eruptive plasma by assuming simplified geometrical structures of the plasma. In some events, their associated prominence eruptions and eruptive plasma were observed in EUV observations as absorption or emission features. The absorption feature provides the lower limit to the cold mass while the emission feature provides the upper limit to the mass of observed eruptive plasma in X-ray and EUV passbands. We compare the mass constraints for each temperature responses and find that the mass in EUV and XRT are smaller in their upper or lower limit than total mass in coronagraph. About half eruptive events in XRT have no corresponding CME, which may be due to failed eruptions or low plasma density. In addition, some events were observed by a few passbands in X-ray, which allows the determination of the eruptive plasma temperature using a filter ratio method. We present the isothermal plasma temperatures by the filter ratio method. These are possibly an average temperature for higher temperature plasma because the XRT is more sensitive in higher temperature.

• Journal of Information Display
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• 제11권3호
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• pp.109-112
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• 2010

The solid phase compositions and dielectric properties of silicon nitride ($SiN_x$) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature ($200^{\circ}C$) were studied. Controlling the source gas mixing ratio, R = $[N_2]/[SiH_4]$, and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the $SiN_x$ films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant ($\kappa$ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.