• Korean Journal of Materials Research
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• v.19 no.8
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• pp.443-446
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• 2009

This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO) as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based lightemitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beam evaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers were in excess of 80% throughout the visible region of the spectrum. Specific contact resistances of $3.4\times10^{-4}$, $1.2\times10^{-4}$, $9.2\times0^{-5}$, and $3.6\times10^{-5}{\Omega}{\cdot}cm^2$ for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. The forward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15 V lower and was increased by 38.9%, respectively, at a forward current of 20 mA compared to that of a standard GaN LED with an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.131-131
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• 2010

The power of semiconductor laser diodes has been limited primarily by the heating effects which occur at high optical intensities. The actual limiting event can take one of a number of forms such as. catastrophic optical damage or filamentation. A general approach to this problem is to design a heterostructure which creates a high powered output while maintaining low internal optical intensities. A graded index separate confinement heterostructure (GRIN-SCH) is one such structure that accomplishes the above task. Here, the active region is sandwiched between graded index layers where the index of refraction increases nearer to the active layer. This structure has been shown to yield a high efficiency due to the confinement of both the optical power and carriers, thereby reducing the optical intensity required to achieve higher powers. The optical confinement also reinforces the optical beam quality against high power effects. Quantum dots have long been a desirable option for laser diodes due to the enhanced optical properties associated with the zeroth dimensionality. In our work, we use PICS3D software created by Crosslight Software Inc. to simulate the performance of In0.67A10.33As/A10.2Ga0.8AsquantumdotsusedwithaGRIN-SCH. The simulation tools are used to optimize the GRIN-SCH structure for high efficiency and optical beam quality.

• Journal of Communications and Networks
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• v.10 no.1
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• pp.1-4
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• 2008

This paper reports the design of a multiwavelength fiber laser source that utilizes a linear cavity of hybrid Brillouin/Erbium fiber laser (BEFL). The output power, threshold power and free running cavity modes were investigated against the pump powers. The structure exhibited low threshold operation of 4 mW at 2.3 mW injected Brillouin pump power. The optimization of Brillouin pump wavelength, power and Erbium gain led to a maximum possible number of channels generated. Simultaneous and stable operation of 21 channels with 10.88 GHz channels spacing were obtained from this architecture at 1 mW injected Brillouin pump power and 90 m W Erbium doped fiber pump power in the 1555 nm region.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.1
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• pp.677-682
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• 2015

In this paper, we investigated the effect of light on the performance of the receiver system noise and external noise added from the ever-present influence in general optical system. And calculated the reception sensitivity of the receiver at the time of off-keying transmission - from the optical transmission system in consideration of the case that the photo detector has a quantum yield of less than one-one. Not less than 50 it was confirmed that it is possible to configure the low power system is calculated and compared with the case where less than 300 the receiver sensitivity of the optical system to maintain the standard error probability. However, even if these values were considered, and the preamplifier in the receiver, considering a case of using a low-output light source, so that a heavy burden in the value less than the actual system installation, using the light source having less than the output, as shown in Figure 3, the results that were obtained also may be used.

• ETRI Journal
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• v.23 no.1
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• pp.1-8
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• 2001

The performance of a long wavelength-band erbium-doped fiber amplifier (L-band EDFA) using 1530nm-band pumping has been studied. A 1530nm-band pump source is built using a tunable light source and two C-band EDFAs in cascaded configuration, which is able to deliver a maximum output power of 23dBm. Gain coefficient and noise figure (NF) of the L-band EDFA are measured for pump wavelengths between 1530nm and 1560nm. The gain coefficient with a 1545nm pump is more than twice as large as with a 1480nm pump. It indicates that the L-band EDFA consumes low power. The noise figure of 1530nm pump is 6.36dB at worst, which is 0.75dB higher than that of 1480nm pumped EDFA. The optimum pump wavelength range to obtain high gain and low NF in the 1530nm band appears to be between 1530nm and 1540nm. Gain spectra as a function of a pump wavelength have bandwidth of more than 10nm so that a broadband pump source can be used as 1530nm-band pump. The L-band EDFA is also tested for WDM signals. Flat Gain bandwidth is 32nm from 1571.5 to 1603.5nm within 1dB excursion at input signal of -10dBm/ch. These results demonstrate that 1530nm-band pump can be used as a new efficient pump source for L-band EDFAs.

• Korean Journal of Optics and Photonics
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• v.18 no.4
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• pp.270-273
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• 2007

We have investigated the output characteristics of the 946 nm Nd:YAG laser which is longitudinally pumped by a fiber coupled laser diode. The temperature of a Nd:YAG crystal mount was kept constant by a controller with thermoelectric cooler. As a result, we measured more intense output at a low temperature, and then the maximum output power was measured to be 870 mW when the pumping power and the temperature were 9.95 W and $5^{\circ}C$, respectively. It appeared that output was decreased above 10 W pump power because of the thermal effects in gain medium.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.221-228
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• 2011

This paper describes 250-Mb/s fiber optic transmitter and receiver ICs for plastic optical fiber applications using a$ 0.18-{\mu}m$ CMOS technology. Simple signal and light detection schemes are introduced for power reduction in sleep mode. The transmitter converts non-return-to-zero digital data into 650-nm visible-red light signal and the receiver recovers the digital data from the incident light signal through up to 50-m plastic optical fiber. The transmitter and receiver ICs occupy only 0.62 $mm^2$ of area including electrostatic discharge protection diodes and bonding pads. The transmitter IC consumes 23 mA with 20 mA of LED driving currents, and the receiver IC consumes 16 mA with 4 mA of output driving currents at 250 Mb/s of data rate from a 3.3-V supply in active mode. In sleep mode, the transmitter and receiver ICs consume only 25 ${\mu}A$ and 40 ${\mu}A$, respectively.

• Korean Journal of Optics and Photonics
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• v.10 no.3
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• pp.221-225
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• 1999

The positive branch confocal unstable resonator equipped with an intra-cavity beam splitter has been studied experimentally to achieve low beam divergence in the copper vapor laser. Output laser beams of 0.15 mrad divergence was achieved from the laser system with a 10 cm curvature convex mirror (M=30), and laser beams of 0.1 mrad was achieved for a 5 cm curvature convex mirror (M=60). The power density of the far-field beam from the M=60 resonator laser was 130 times higher than the case of the 2 mrad-operation with the plane-parallel resonator. We also observed the self-mode-locking from the unstable resonator laser pulses.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.8
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• pp.22-26
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• 2012

This paper introduces a 2.5-Gb/s optical receiver implemented in a standard 1P4M 0.18um CMOS technology for the applications of active optical HDMI cables. The optical receiver consists of a differential transimpedance amplifier(TIA), a five-stage differential limiting amplifier(LA), and an output buffer. The TIA exploits the inverter input configuration with a resistive feedback for low noise and power consumption. It is cascaded by an additional differential amplifier and a DC-balanced buffer to facilitate the following LA design. The LA consists of five gain cells, an output buffer, and an offset cancellation circuit. The proposed optical receiver demonstrates $91dB{\Omega}$ transimpedance gain, 1.55 GHz bandwidth even with the large photodiode capacitance of 320 fF, 16 pA/sqrt(Hz) average noise current spectral density within the bandwidth (corresponding to the optical sensitivity of -21.6 dBm for $10^{-12}$ BER), and 40 mW power dissipation from a single 1.8-V supply. Test chips occupy the area of $1.35{\times}2.46mm^2$ including pads. The optically measured eye-diagrams confirms wide and clear eye-openings for 2.5-Gb/s operations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.1
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• pp.47-52
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• 2004

This paper presents a CMOS optical receiver design featuring wide input dynamic range and low bit error rate suitable for FTTH application. We achieved 60dB input dynamic range for up to 100Mbps by controlling the PMOS feedback resistance of transimpedance preamplifier according to its output signal level. Auto-bias circuit is designed in current mirror configuration to minimize duty error. Circuit simulation has been performed using 2-poly, 3-metal, 0.6um CMOS process parameters. The designed receiver consumes less than 130mW at 100Mbps with 5V power supply.