• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.21 no.1
• /
• pp.69-75
• /
• 2010

In this paper, with using the clapp type VCO(Voltage Controlled Osillator) configuration a wideband frequency synthesizer in UHF band is proposed. In order to design a wideband frequency synthesizer, the variation of phase in the negative resistance circuit as well as the load circuit was analyzed. Based on this result we propose a method to widen the operation range of the VCO. A frequency synthesizer using the proposed wideband VCO was designed and fabricated. It is shown that the synthesizer has the operating frequency range of 740~1,530 MHz by 0~5 V varactor tuning voltage, and it had the output power of 2~-6 dBm. Moreover, the phase noise measured as -77 dBc/Hz at 10 kHz offset, and as -108 dBc/Hz at 100 kHz offset from the oscillation frequency.

• Journal of Institute of Control, Robotics and Systems
• /
• v.18 no.6
• /
• pp.546-554
• /
• 2012

This paper suggests a design method of an improved phase control loop for tracking resonant frequency of solid type precision resonant gyroscope. In general, a low cost MEMS gyroscope adapts the automatic gain control loops by taking a velocity feedback configuration. This control technique for controlling the resonance amplitude shows a stable performance. But in terms of resonant frequency tracking, this technique shows an unreliable performance due to phase errors because the AGC method cannot provide an active phase control capability. For the resonance control loop design of a solid type precision resonant gyroscope, this paper presents a phase domain control loop based on linear PLL (Phase Locked Loop). In particular, phase control loop is exploited using a higher order PLL loop filter by extending the first order active PI (Proportion-Integral) filter. For the verification of the proposed loop design, a hemispherical resonant gyroscope is considered. Numerical simulation result demonstrates that the control loop shows a robust performance against initial resonant frequency gap between resonator and voltage control oscillator. Also it is verified that the designed loop achieves a stable oscillation even under the initial frequency gap condition of about 25 Hz, which amounts to about 1% of the natural frequency of a conventional resonant gyroscope.

• 한국전산유체공학회:학술대회논문집
• /
• 2004.03a
• /
• pp.113-118
• /
• 2004

This paper presents a two-dimensional edge tone to predict the frequency characteristics of the discrete oscillations of a jet-edge feedback cycle by the finite difference lattice Boltzmann method (FDLBM). We use a new lattice BGK compressible fluid model that has an additional term and allow larger time increment comparing the conventional FDLBM, and also use a boundary fitted coordinates. The jet is chosen long enough in order to guarantee the parabolic velocity profile of the jet at the outlet, and the edge consists of a wedge with an angle of $\alpha=23^0$. At a stand-off distance $\omega$, the edge is inserted along the centreline of the jet, and a sinuous instability wave with real frequency f is assumed to be created in the vicinity of the nozzle and th propagate towards the downstream. We have succeeded in capturing very small pressure fluctuations result from periodically oscillation of jet around the edge. That pressure fluctuations propagate with the sound speed. Its interaction with the wedge produces an irrotational feedback field which, near the nozzle exit, is a periodic transverse flow producing the singularities at the nozzle lips. The lattice BGK model for compressible fluids is shown to be one of powerful tool for computing sound generation and propagation for a wide range of flows.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.236-238
• /
• 1997

A cellular power amplifier using an APCVD(Atmospheric Pressure Chemical Vapor Deposition)-grown SiGe base HBT of ETRI has been designed with a linear simulation CAD. The Si/SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0 GHz and a maximum oscillation frequency(f$_{max}$) of 16.1 GHz with a pad de-embedding A packaged power Si/SiGe HBT with an emitter area of 2$\times$8$\times$80${\mu}{\textrm}{m}$$^2$typically shows a f$_{T}$ of 4.7 GHz and a f$_{max}$ of 7.1 GHz at a collector current (Ic) of 115 mA. The power amplifier exhibits a Forward transmission coefficient(S21) of 13.5 dB, an input and an output reflection coefficients of -42 dB and -45 dB respectively. Up to now the III-V compound semiconductor devices hale dominated microwave applications, however a rapid progress in Si-based technology make the advent of the Si/SiGe HBT which is promising in low to even higher microwave range because of lower cost and relatively higher reproducibility of a Si-based process.ess.ess.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.12 no.4
• /
• pp.483-490
• /
• 2009

In this paper, a novel low-damage silicon nitride passivation for 100nm InAlAs/InGaAs MHEMTs has been developed using remote ICPCVD. The silicon nitride deposited by ICPCVD showed higher quality, higher density, and lower hydrogen concentration than those of silicon nitride deposited by PECVD. In particular, we successfully minimized the plasma damage by separating the silicon nitride deposition region remotely from ICP generation region, typically with distance of 34cm. The silicon nitride passivation with remote ICPCVD has been successfully demonstrated on GaAs MHEMTs with minimized damage. The passivated devices showed considerable improvement in DC characteristics and also exhibited excellent RF characteristics($f_T$of 200GHz).The devices with remote ICPCVD passivation of 50nm silicon nitride exhibited 22% improvement(535mS/mm to 654mS/mm) of a maximum extrinsic transconductance($g_{m.max}$) and 20% improvement(551mA/mm to 662mA/mm) of a maximum saturation drain current ($I_{DS.max}$) compared to those of unpassivated ones, respectively. The results achieved in this work demonstrate that remote ICPCVD is a suitable candidate for the next-generation MHEMT passivation technique.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.21 no.12
• /
• pp.3215-3226
• /
• 1996

In this paper a K-band harmonic oscillator competitive to ordinary Push-Push type oscillators is introduced. This oscillator is composed of two-X-band dielectric resonance circuits. To favor its harmonic generation, the load effect and the bias effect are studied to allow the maximum harmonic distortion. As results, the dielectric resonated load and the class A bias are used for the 2nd harmonic generation. analytical study for modelling of voltage controlled dielectric resonator is carried out with theoretical background. The performance of the circuit is evaluated by simulation using harmonic balanced method. The novel structure has ont only a voltage tuning circuit but also an output port at fundamental frequency as the function of prescaler for phase lockede loop application on the just single oscillation structure. In experimentation, the output freqneyc of the 2nd harmonic signal is 20.5GHz and the maximum power level of output is +5.5dBm without additional post amplifiers. the harmonic oscillator exhibits -30dBc of high fundamental frequency rejection without added extra filters. The phase noise of -90dBc/Hz at 100kHz off-carrier has been achieved under free running condition, that satisfies phase noise requirement of IESS 308. The proposed oscillator may be utilized as the clean and stable fixed local oscillator in Transmit Block Upconvertor(TBU) or Low oise Block downconvertor(LNB) for K/Ka-band digital communications and satellite broadcastings.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2003.05a
• /
• pp.59-63
• /
• 2003

This paper describes the conceptual design method of subscale direct-connect test facility for liquid fuel ramjet combustion study and preliminary analysis of test results. The measured pressure signal represents the successful operation of the test facility. The pressure oscillation in combustion chamber shows the dominant frequency of 190Hz, relatively very low frequency to 1L acoustic mode (1200Hz) based on the length of combustor. It is suspected that there were several driving sources, which are vortex street at backward step of combustor, inlet resonance induced by the long length of unchecked inlet, and/or combustor configuration with optical window.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.2
• /
• pp.57-65
• /
• 1995

The effects of device geometry and layout on high speed performance such as current gain outoff frequency(f$_{T}$) and maximum oscillation frequency(f$_{max}$) are of very improtant for the scaling-down of geterojunction bipolar transistors(HBT$_{s}$). In this paper AlGaAs/GaAs HBTs are fabricated by MBE epitaxial growth and conventional mesa process, and the experimental data of emitter-base geometru dependency of HBT performance are presented in order to provide the quantitative information for optimum device structure design. It is shown that f$_{T}$ and f$_{max}$ are inversely proportional to the emiter stripe width, while the low emitter perimeter/area ratio is better to f$_{T}$ and worse ot f$_{max}$. It is also demonstrated the f$_{T}$ and f$_{max}$ are highly improved by the emitter-base spacing reduction resulting in less parsitic effects. As the result f$_{T}$ of 42GHz and f$_{max}$ of 23GHz are obtained for fabricated HBT with emitter area of 3${\times}20^{\mu}m^{2}$ and E-B spacing of 0.2$\mu$m.m.m.

• ETRI Journal
• /
• v.27 no.6
• /
• pp.685-690
• /
• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• Proceedings of the Korea Water Resources Association Conference
• /
• 2015.05a
• /
• pp.537-537
• /
• 2015

In recent decades, the independence and identical distribution (iid) assumption for extreme events has been shown to be invalid in many cases because long-term climate variability resulting from phenomena such as the Pacific decadal variability and El Nino-Southern Oscillation may induce varying meteorological systems such as persistent wet years and dry years. Therefore, in the current study we propose a new parameter estimation method for probability distribution models to more accurately predict the magnitude of future extreme events when the iid assumption of probability distributions for large-scale climate variability is not adequate. The proposed parameter estimation is based on a metaheuristic approach and is derived from the objective function of the rth power probability-weighted sum of observations in increasing order. The combination of two distributions, gamma and generalized extreme value (GEV), was fitted to the GEV distribution in a simulation study. In addition, a case study examining the annual hourly maximum precipitation of all stations in South Korea was performed to evaluate the performance of the proposed approach. The results of the simulation study and case study indicate that the proposed metaheuristic parameter estimation method is an effective alternative for accurately selecting the rth power when the iid assumption of extreme hydrometeorological events is not valid for large-scale climate variability. The maximum likelihood estimate is more accurate with a low mixing probability, and the probability-weighted moment method is a moderately effective option.