• 전자공학회논문지A
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• 제33A권3호
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• pp.176-186
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• 1996

As the density of VLSI increases, the conventional logic testing is not sufficient to completely detect the new faults generated in design and fabrication processing. Recently, IDDQ testing becomes very attractive since it can overcome the limitations of logic testing. In this paper, G-ATPG (gyeongsang automatic test pattern genrator) is designed which is able to be adapted to IDDQ testing for combinational CMOS VLSI. In G-ATPG, stuck-at, transistor stuck-on, GOS (gate oxide short)or bridging faults which can occur within priitive gate or XOR is modelled to primitive fault patterns and the concept of a fault-sensitizing gate is used to simulate only gates that need to sensitize the faulty gate because IDDQ test does not require the process of fault propagation. Primitive fault patterns are graded to reduce CPU time for the gates in a circuit whenever a test pattern is generated. the simulation results in bench mark circuits show that CPU time and fault coverage are enhanced more than the conventional ATPG using IDDQ test.

• 전자공학회논문지A
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• 제30A권2호
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• pp.76-85
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• 1993

This paper describes the design of a technology-independent logic, function, and timing extraction system from SPICE-like network descriptions. Technology-independent extraction mechanism is provided in the form of technology files containing the rules for constructing logic gates and functional blocks. The designed system can be more effectively used in cell-based design by describing the cells to be extracted. Timing extraction is performed by using a linear RC gate delay model which takes interconnection delay into account. Experimental results show that estimated delay is within 10 percents for logic gate circuits when compared with SPICE. Through higher-level design descriptions obtained by extraction, design cycles can be considerably reduces.

• 대한전자공학회논문지
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• 제25권8호
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• pp.992-997
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• 1988

A generalized coding algorithm for multiple inputs multiple-valued logic gate based on shadow-casting is proposed. Proposed algorithm can minimize the useless pixels in case the number of inputs is not 2N (N is a natural number). A detailed analysis of advantages of proposed algorithm is presented and its effectiveness is demonstrated in case of three input binary system using inputs of 8*8 data.

• 전기학회논문지
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• 제66권10호
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• pp.1494-1498
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• 2017

In this study, we investigate the influence of an overlap between the gate and source/drain regions of silicon nanowire (SiNW) CMOS (complementary metal-oxide-semiconductor) inverter on bendable plastic substrates and describe their electrical characteristics. The combination of n-channel silicon nanowire field-effect transistor (n-SiNWFET) and p-channel silicon nanowire field-effect transistor (p-SiNWFET) operates as an inverter logic gate. The gains with a drain voltage ($V_{dd}$) of 1 V are 3.07 and 1.21 for overlapped device and non-overlapped device, respectively. The superior electrical characteristics of each of the SiNW transistors including steep subthreshold slopes and the high $I_{on}/I_{off}$ ratios are major factors that enable the excellent operation of the logic gate.

• Transactions on Electrical and Electronic Materials
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• 제10권6호
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• pp.193-195
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• 2009

This paper aims to develop a low gate source voltage ($V_{gs}$) N-LDMOS element that is fully operational at a CMOS Logic Gate voltage (3.3 or 5 V) realized using the 0.35 μm BCDMOS process. The basic structure of the N-LDMOS element presented here has a Low $V_{gs}$ LDMOS structure to which the thickness of a logic gate oxide is applied. Additional modification has been carried out in order to obtain features of an improved breakdown voltage and a specific on resistance ($R_{sp}$). A N-LDMOS element can be developed with improved features of breakdown voltage and specific on resistance, which is an important criterion for power elements by means of using a proper structure and appropriate process modification. In this paper, the structure has been made to withstand the excessive electrical field on the drain side by applying the double gate oxide structure to the channel area, to improve the specific on resistance in addition to providing a sufficient breakdown voltage margin. It is shown that the resulting modified N-LDMOS structure with the feature of the specific on resistance is improved by 31%, and so it is expected that optimized power efficiencies and the size-effectiveness can be obtained.

• 한국인터넷방송통신학회논문지
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• 제8권2호
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• pp.15-21
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• 2008

본 논문에서는 2진논리의 확장을 Galis체상에서 해석하여 확장논리에 기초한 순차디지털논리시스템과 컴퓨터구조의 핵심인 연산알고리즘을 논의하였다. 순차디지털논리시스템은 Building Block으로서 T-gate를 사용하였으며, 차순상태함수, 출력함수를 도출하여 최종 궤환이 없는 Moore Model의 순차디지털논리시스템을 구성하였다. 그리고, 컴퓨터구조에서 중요한 연산알고리즘의 핵심인 가산, 감산, 승산 및 제산 알고리즘을 유한체의 수학적 성질을 토대로 각각 도출하였다. 특히, 유한체 GF($P^m$)상에서 P=2인 경우는 기존의 2진디지털논리시스템에 적용이 용이하다는 장점이 있으며, mod2의 성질에 의해 감산 알고리즘은 가산 알고리즘과 동일하다. 제안한 방법은 기존의 2진논리를 확장할 수 있어 좀 더 효율적으로 디지털논리시스템을 구성할 수 있을 것으로 사료된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.82-82
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• 2008

One-dimensional (1D) nanowires have been received much attention due to their potential for applications in various field. Recently some logic applications fabricated on various nanowires, such as ZnO, CdS, Si, are reported. These logic circuits, which consist of two- or three field effect transistors(FETs), are basic components of computation machine such as central process unit (CPU). FETs fabricated on nanowire generally have surrounded shapes of gate structure, which improve the device performance. Highly integrated circuits can also be achieved by fabricating on nano-scaled nanowires. But the numerical and SPICE simulation about the logic circuitry have never been reported and analyses of detailed parameters related to performance, such as channel doping, gate shapes, souce/drain contact and etc., were strongly needed. In our study, NAND and NOT logic circuits were simulated and characterized using 2- and 3-dimensional numerical simulation (SILVACO ATLAS) and built-in spice module(mixed mode).

• 한국정보통신학회논문지
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• 제10권10호
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• pp.1773-1778
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• 2006

본 논문에서는 개선된 자동정리증명 기법에 기초하여 유한체상의 디지털논리 시스템을 구성하는 방법을 제안하였다. 제안한 방법은 먼저 유한체상의 중요한 학적 성질을 논의하였고 자동정리증명기법의 개념과 기본 성질을 서술하였다. 그리고 개선된 자동정리증명기법을 적용하기 위해 몇 가지 정의를 하였으며 이를 근간으로 디지털논리 시스템의 Building Block을 제안하였다. 또한, 디지털논리 시스템을 구성하기 위한 중요한 관계를 정의하였으며 최종 유한체상의 디지털논리시스템을 개선된 자동정리 증명 기법에 의해 구성하였다.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.141-143
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• 2002

We have simulated and Laid out a Single Flux Quantum(SFQ) AND gate for Arithmetic Logic Unit by using XIC, WRspice and Lmeter. This circuit is a combination of two D Flip-Flop. D Flip- Flop and dc SQUID are the similar shape from the fact that it has the a loop inductor and two Josephson junction. We also obtained operating margins and accomplished layout of the AND gate. We got the margin of $\pm$42% over.

• 전자공학회논문지A
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• 제30A권5호
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• pp.52-62
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• 1993

This paper describes the implementation of a layout generation system for the gate matrix style to implement multi-level logic. To achieve improved layouts from general net lists, the proposed system performs flexible net binding for series nets. Also the system reassings gates by the heuristic information that shorter net lengths are better for the track minimization. By track minimizing with subdividing layout column information, the system decreases the number of necessary layout tracks. Experimental results show that the system generates more area-reduced (approximately 7.46%) layouts than those by previous gate matrix generation systems using net list inputs.