• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1984.10a
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• pp.19-21
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• 1984

A design of digital loaded-line phase shifter circuits with PIN Diode is presented. A computer program showes that any phase difference which is satisfied with the condition of minimun VSWR can be obtained with variable stub length and spacing between stubs. A 30 phase bit is designed and measured at 3Gh. Experimental and theoretical performance are compared and found to be in good agreement.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.6 no.2
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• pp.3-10
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• 1995

In this paper, the phase shifter using the p-i-n diode is designed and analyze. The large phase shift can be achieved by the swithched-line and the hybrid branch line phase shifter, however the small phase shift can be achieved by the loaded-line phase shifter, according to the bias state of the p-i-n niode. The results of the experiment agree with those of computer simulation at the center frequency.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.3
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• pp.360-367
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• 2009

In this paper, the RADANT phase scanning scheme and the transmission-type loaded line phase shifter scheme, which are applicable to the phased array systems, are studied. Using these two schemes, a theoretical method to design an electronic beam steering RADANT lens is introduced. The validity of the presented theoretical method is verified through the simplified circuit simulation results.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.89-96
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• 1995

Lateral p-i-n photodiodes have been fabricated, electrically tested, and incorporated into microwave control circuits such as an optically excited microwave atttenuator and reflection type phase shifter. Circuit design procedures for the loaded-line phase shifter with the optically controlled p-i-n photodiode are presented. The equal loss loading mode presented for the first time for the phase shifter circuits with lossy load allows an equal insertion loss of the phase shifter in both of its phase states. It is found that the insertion loss of the equal loss loading mode phase shifter constructed with the fabricated p-i-n photodiode load are about 3dB for 11.25$^{\circ}$ bit and 1dB for 5.625$^{\circ}$ bit for the frequency range of 2GHz to 11GHz.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.45-52
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• 1994

A microwave PIN diode 4-bit phase shifter is designed in X-band. A loaded-line type is used for the 22.5$^{\circ}$ and 45$^{\circ}$ bits, and a switched-line type for the 90$^{\circ}$and 180$^{\circ}$bits. The measured results show that the phase error and average insertion loss are less than $\pm$5.4$^{\circ}$and 7.2dB, respectively, over a 9.75~10.25GHz frequency band.

• Journal of electromagnetic engineering and science
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• v.13 no.2
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• pp.137-139
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• 2013

A compact metamaterial (MTM)-based tunable phase shifter consisting of four unit cells with a simple DC bias circuit has been designed at 2.4 GHz. The variable series capacitors and shunt inductors that are required to be loaded periodically onto a host transmission line are realized employing only chip variable capacitors (varactors). In addition, the proposed phase shifter requires only one DC bias source to control the varactors, with the matching condition of the MTM line automatically satisfied. The measured phase shifting range is $285.2^{\circ}$ (from $-74.2^{\circ}$ to $211^{\circ}$). The measured insertion loss is approximately 1.5 dB. The circuit/electromagnetic-simulated and measured results are in good agreement.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.408-412
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• 1987

The designing method of the reflection and the loaded-line phase shifter is presented. Its phase shift is variable with changing of the stub parameters. In this paper, we design the 2-bit phase shifter which have 10\ulcornerand 90\ulcornerbit phase shift and analysi its characteristics. The experiments show 2d B max.insertion loss, 2.0max. input VSWR and 6\ulcornerphase error on 2.9-3.1GHz frequency range. They agree well with the theoretical results.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.259-267
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• 1999

In this paper, a C-band 6-bit phase shifter is designed and fabricated and design techniques for each phase bit are represented. We applied the loaded line type to $5.625^{\circ},\;11.25^{\circ},\;22.5^{\circ}\;and\;45^{\circ}$ phase bits and the hybrid coupled type to $90^{\circ}$ phase bit and the switched line type to $180^{\circ}$ phase bit, respectively on a microstrip copper substrate.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.345-349
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• 2000

A microstrip polarized 8${\times}$2 linear phased array antenna with four 4-bit phase shifters is designed at 10 GHz. The 180$^{\circ}$and 90$^{\circ}$ sections of the phase shifter are of the switched line type, and the rests are of the loaded line type. A 2${\times}$2 sequential sub-array is adopted for a broad axial ratio bandwidth. The construction of the array antenna is of the tile type placing the phase shifters on the same layer containing the feed network. The element spacing is chosen to be 0.45λ$\sub$0/ to exclude the grating lobe. Measurement results show a gain 9.69 dB at broadside and 8.3 dB at the beam-tilt angle of 16$^{\circ}$ by imposing a progressive phase of 90$^{\circ}$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.47-54
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• 1990

In this paper, we design the 4-bit phase shifter which have $22.5^{\circ},45^{\circ},90^{\circ}$ and $180^{\circ}$ phase shift by applying the loaded line and switched network phase shifter. Its phase shift is variable with changing of the stub and passive device parameters. The experiments show the 6.5 dB average insertion loss and $10^{\circ}$ average phase error at center frequency, 6GHz. The results of experiment agree well with the theories except $180^{\circ}$ phase shifter.