• 대한전자공학회논문지
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• 제22권4호
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• pp.39-43
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• 1985

본 논문에서는 스텝 엔드 리피트(step and repeat)투체량광방식의 광학 lithography 특성을 고찰하였다. 먼저 광학 lithography 특성에 영향을 주는 파라메터들의 상호관계를 고찰하였고, 표면평편도가 ±5μm인 마스크(mash)상에서 실험하여 미사형상의 선폭편차에 대한 선폭편차의 관계와 노광량에 따른 선폭 변화의 관계를 얼었다. 이들 관계로부터 스텝 엔드 리피트 투영 노광에서의 미세형상의 선고조절의 안정화를 이루게 하는 조건을 제시한다.

• 한국정밀공학회지
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• 제26권11호
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• pp.77-84
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• 2009

Alignment error of the BGA lithography equipment is mainly caused by the dimensional change of the BGA panel which is generated during the manufacturing processes. To minimize the alignment error, 'mark alignment' algorithm in place of 'center alignment' algorithm was proposed and the optimal solution for the algorithm was derived by simple analytic form. The developed algorithm distributes evenly the alignment error over the whole panel which was evaluated by the numerical simulation. Finally, the developed algorithm was implemented to the controller of the lithography equipment and the alignment error was measured at the fiducial mark location. From the measurement, it is also concluded that the developed alignment algorithm be effective to reduce the maximum value of alignment error.

• 전자통신동향분석
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• 제13권5호통권53호
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• pp.38-52
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• 1998

Phase-shifting masks (PSM), optical proximity correction (OPC), off-axis illumination (OAI), annular illumination (AI)의 리소그래피 분해능 향상 기법과 deep ultraviolet photoresist의 개발 및 리소그래피의 최근 기술 동향을 요약 소개한다. DUV 리소그래피의 대안으로 관심을 끌고 있는 scattering with angular limitation projection electron-beam lithography (SCALPEL), extreme ultraviolet lithography (EUVL), X-ray lithography (XRL), ion projection lithography (IPL) 등의 새로운 리소그래피 기술들의 기본 원리와 최근 기술 동향도 소개하였다. 리소그래피는 반도체 공정에 있어서 가장 중요한 부분을 차지하기 때문에 리소그래피의 최근 기술 동향을 검토해 봄으로써 국내 리소그래피 장비 산업의 기술 개발을 위한 방향 설정에 도움이 될 것으로 생각한다.

• 대한기계학회논문집A
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• 제29권6호
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• pp.852-859
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• 2005

Molecular dynamics simulations of nanoimprint lithography in which a stamp with patterns is pressed onto amorphous poly-(methylmethacrylate) (PMMA) surface are performed to study the deformation of polymer. Force fields including bond, angle, torsion, inversion, van der Waals and electrostatic potential are used to describe the intermolecular and intramolecular force of PMMA molecules and stamp. Periodic boundary condition is used in horizontal direction and Nose-Hoover thermostat is used to control the system temperature. As the simulation results, the adhesion forces between stamp and polymer are calculated and the mechanism of deformation are investigated. The effects of the adhesion and friction forces on the polymer deformation are also studied to analyze the pattern transfer in nanoimprint lithography. The mechanism of polymer deformation is investigated by means of inspecting the indentation process, molecular configurational properties, and molecular configurational energies.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제16권3호
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• pp.208-215
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• 2016

The lithography hotspot detection process is crucial for semiconductor design development process. But, the lithography hotspot detection using optical simulation method takes much time and it slowdown the layout design development cycle. Though the geometry based approach is introduced as an alternative, it still revealed low detection performance and sophisticated framework. To solve this problem, we introduce a deep convolutional neural network based hotspot detection method. Our method made better results in ICCCAD 2012 dataset. To reach this score, we used lots of technical effort to improve the result in addition to just utilizing the nature of convolutional neural network. Inspection region reduction, data augmentation, DBSCAN clustering helped our work more stable and faster.

• 한국공작기계학회논문집
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• 제17권3호
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• pp.20-26
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• 2008

Nanoimprint lithography(NIL) is becoming next generation lithography of significant interest due to its low cost and a potential patterning resolution of 10nm or less. Success of the NIL relies on the adequate conditions of pressure, temperature and time. To have the adequate conditions for NIL, one has to understand the polymer flowing behavior during the imprinting process. In this paper, an analytical approach of polymer flow in thermal NIL was performed based on the squeeze flow with partial slip boundary conditions. Velocity profiles and pressure distributions of the polymer flow were obtained and imprinting forces and residual thickness were predicted with the consideration of the slip velocity between the polymer and the mold/substrate. The results show that the consideration of the slip is very important for investigating the polymer flow in Thermal NIL.

• 한국레이저가공학회지
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• 제14권2호
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• pp.13-16
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• 2011

We fabricated the Fresnel zone plate using femtosecond laser lithography-assisted micro-machining, which is a combined process of nonlinear lithography and wet etching. We investigated the focusing properties by launching a 632.8nm wavelength He-Ne laser beam into the zone plate. The spot size of the primary focal point was $27{\mu}m$ and the intensity of focal point was 0.565W/$cm^2$.

• 한국산학기술학회논문지
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• 제5권2호
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• pp.186-190
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• 2004

Nano size 몰드의 제작은 X-ray lithography 방법을 이용하여 몰드를 제작하고, micro size의 경우 Deep UV lithography 방법을 이용하여 몰드를 제작하고 있다. 본 연구에서는 SLS(Selective Laser Sintering)형 RP(Rapid Prototyping System)을 이용하여 미세구조 몰드를 제작하였으며, 패턴의 깊이는 400 ㎛까지 구현하였다. 제작된 몰드의 강도와 내열성을 높이기 위하여 전해도금을 이용하여 몰드의 표면에 Ni를 300 ㎛생성 시켰다.

• 한국표면공학회지
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• 제42권2호
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• pp.59-62
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• 2009

Antireflection pattern, moth-eye structure, was fabricated on lens using Ultra Violet nanoimprint lithography and flexible template. Ni template with conical shaped structure was used as a master template to molding. The flexible poly vinyl alcohol template was fabricated by molding. This poly vinyl alcohol template was used as an imprint template of imprint at lens. Using Ultra Violet nanoimprint lithography and poly vinyl alcohol template, polymer based moth-eye structure was formed on lens and its transmittance was increased up to 94% from 92% at 550 nm wavelength.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.25-33
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• 2007

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.