• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1125-1128
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• 2002

Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.1
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• pp.1-7
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• 2012

We have developed a new gate driver circuit for liquid crystal displays using oxide thin-film transistors (TFTs). In the new gate driver, negative gate bias is applied to turn off the oxide TFTs because the oxide TFT occasionally has negative threshold voltage (VT). In addition, we employed three parallel pull-down TFTs that are turned on in turns to enhance the stability. SPICE simulation showed that the proposed circuit worked successfully covering the VT range of -3 V ~ +6 V And fabrication results confirmed stable operation of the new circuit using oxide TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.244-244
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• 1999

Liquid Crystal Displays(LCDs) 투명성 전도막으로 사용하는 Indium Tin Oxide (ITO)의 고밀도 식각특성을 조사하였다. 특히 ITO식각의 경우, pixel electrode 전극에서 사용되는 underlayer인 SiO2, Si3N4와의 최적의 선택비를 얻는데 중점을 두고 있다. 따라서 본 실험에서는 Inductively Coupled Plasma(ICP)를 이용하여 source power, gas combination, bias voltage, pressure 및 기판온도에 따른 ITO의 식각 특성과 이의 underlayer인 SiO2, Si3N4와의 선택비를 조사하였다. Ar과 CH4를 주된 식각가스로서 사용하였으며 첨가가스로는 O2와 HBr를 사용하였다. ITO의 식각특성을 이해하기 위하여 Quadruple Mass Spectrometry(QMS), Optical emission spectroscopy(OES) 이용하였으며, 식각된 sample의 잔류물을 조사하기 위하여 X-ray photoelectron spectroscopy(XPS)를 이용하여 분석하였다. Ar gas에 적정량의 CH4 혼합이 순수한 Ar 가스로 식각한 경우에 비하여 ITO와 SiO2, Si3N4의 선택비가 높았으며, 더 높은 식각 선택비를 얻기 위하여 Ar/CH 분위기에서 첨가가스 O2, HBr을 사용하였다. Source power 및 bias 증가에 따라 ITO의 식각률은 증가하나, underlayer와의 선택비는 감소함을 보였다. 본 실험에서 측정된 ITO의 high 식각률은 약 1500$\AA$/min이며, SiO2, Si3N4와의 high selectivity는 각각 7:1, 12:1로 나타났다. ITO의 etchrate 및 선택비는 source power, bias, pressure, CH 가스첨가에 의존하였지만 기판온도에는 큰 변화가 없음을 관찰하였다. 또한 적정량의 가스조합으로 식각된 시편의 잔류물을 줄일 수 있었다.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1582-1584
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• 1996

The polycrystalline silicon thin film transistors (poly-Si TFT) are the most promising candidate for active matrix liquid crystal displays (AMLCD) for their high mobilities and current driving capabilities. The leakage current of the poly-Si TFT is much higher than that of the amorphous-Si TFT, thus larger storage capacitance is required which reduces the aperture ratio fur the pixel. The offset gated poly-Si TFTs have been widely investigated in order to reduce the leakage current. The conventional method for fabricating an offset device may require additional mask and photolithography process step, which is inapplicable for self-aligned source/drain ion implantation and rather cost inefficient. Due to mis-alignment, offset devices show asymmetric transfer characteristics as the source and drain are switched. We have proposed and fabricated a new offset poly-Si TFT by applying photoresist reflow process. The new method does not require an additional mask step and self-aligned ion implantation is applied, thus precise offset length can be defined and source/drain symmetric transfer characteristics are achieved.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.701-705
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• 2002

In order to realize full color display, two approaches were used. The first method is the patterning of red, green, and blue emitters using a selective deposition. Another approach is based on a white-emitting diode, from which the three primary colors could be obtained by micro-patterned color filters. White-light-emitting organic light emitting devices (OLEDs) are attracting much attention recently due to potential applications such as backlights in liquid crystal displays (LCDs) or other illumination purposes. In order for the white OLEDs to be used as backlights in LCDs, the light emission should be bright and have Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.33, 0.33). For obtaining white emission from OLEDs, different colors should be mixed with proper balances even though there are a few different methods for mixing colors. In this study, we will report a white organic electroluminescent device based on an incomplete energy transfer. In which the blue and green emission come from the same layer via incomplete energy transfer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.351-351
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• 2011

Graphene has drawn great interests because of its distinctive band structure and physical properties[1]. A few of the practical applications envisioned for graphene include semiconductor applications, optoelectronics (sola cell, touch screens, liquid crystal displays), and graphene based batteries/super-capacitors [2-3]. Recent work has shown that excellent electronic properties are exhibited by large-scale ultrathin graphite films, grown by chemical vapor deposition on a polycrystalline metal and transferred to a device-compatible surface[4]. In this paper, we focussed our scope for the understanding the graphene growth at different conditions, which enables to control the growth towards the application aimed. The graphene was grown using chemical vapor deposition (CVD) with methane and hydrogen gas in vacuum furnace system. The grown graphene was characterized using a scanning electron microscope(SEM) and Raman spectroscopy. We changed the growth temperature from 900 to $1050^{\circ}C$ with various gas flow rate and composition rate. The growth condition for larger domain will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.515-518
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• 2005

In this paper, we report on our theoretical study on the effect of surface anchoring. Molecular dynamics as well as optical characteristics of PVA cell are computer-simulated with 3D-FEM numerical solver, TechWiz $LCD^{(R)}$. Although simulation parameters are the same except for the consideration of surface anchoring, the simulation reveals that optical transmittance is improved by more than 8% for the weak anchoring case with comparison to the strong anchoring case. Moreover, capacitance between pixel and common electrode is 7% lower for the strong anchoring than that for the weak anchoring. This implies that there exists an appreciable difference between the strong anchoring case and the weak anchoring case. It is very important to take the effect of surface anchoring into account in order to figure out the optical characteristics of an LCD cell more accurately.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.177-182
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• 2013

Nanosphere lithography is an inexpensive, simple, high-throughput nanofabrication process. NSL can be done in different ways, such as drop coating, spin coating or by means of tilted evaporation. Nitride-based light-emitting diodes (LEDs) are applied in different places, such as liquid crystal displays and traffic signals. The characteristics of gallium nitride (GaN)-based LEDs can be enhanced by fabricating nanopatterns on the top surface of the LEDs. In this work, we created differently sized (420, 320 and 140 nm) nanopatterns on the upper surfaces of GaN-based LEDs using a modified nanosphere lithography technique. This technique is quite different from conventional NSL. The characterization of the patterned GaN-based LEDs revealed a dependence on the size of the holes in the pattern created on the LED surface. The depths of the patterns were 80 nm as confirmed by AFM. Both the photoluminescence and electroluminescence intensities of the patterned LEDs were found to increase with an increase in the size of holes in the pattern. The light output power of the 420-nm hole-patterned LED was 1.16 times higher than that of a conventional LED. Moreover, the current-voltage characteristics were improved with the fabrication of differently sized patterns over the LED surface using the proposed nanosphere lithography method.

• Macromolecular Research
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• v.14 no.1
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• pp.1-33
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• 2006

Polyimides (PIs) exhibit excellent thermal stability, mechanical, dielectric, and chemical resistance properties due to their heterocyclic imide rings and aromatic rings on the backbone. Due to these advantageous properties, PIs have found diverse applications in industry. Most PIs are insoluble because of the nature of the high chemical resistance. Thus, they are generally used as a soluble precursor polymer, which forms complexes with solvent molecules, and then finally converts to the corresponding polyimides via imidization reaction. This complexation with solvent has caused severe difficulty in the characterization of the precursor polymers. However, significant progress has recently been made on the detailed characterization of PI precursors and their imidization reaction. On the other hand, much research effort has been exerted to reduce the dielectric constant of PIs, as demanded in the microelectronics industry, through chemical modifications, as well as to develop high performance, light-emitting PIs and liquid crystal (LC) alignment layer PIs with both rubbing and rubbing-free processibility, which are desired in the flat-panel display industry. This article reviews this recent research progresses in characterizing PIs and their precursors and in developing low dielectric constant, light-emitting, and LC alignment layer PIs.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.59.1-59.1
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• 2012

Organic thin-film transistors (OTFTs) with printable semiconductors are promising candidate devices for flexible active-matrix (AM) display applications. Yet, stable operation of actual display panels driven by OTFTs has seldom been reported up to date. Here, we demonstrate a flexible reflective type polymer dispersed liquid crystal (PDLC) display, in which inkjet-printed OTFT arrays are used as driving elements with excellent areal uniformity in terms of device performance. As the active semiconductor, a novel, ambient processable conjugated copolymer was synthesized. The stability of the devices with respect to electrical bias stress was improved by applying a channel-passivation layer, which suppresses the environmental effects and hence reduces the density of trap states at the channel/dielectric interface. The combination of high performance and high stability OTFT devices enabled the successful realization of stable operating flexible color-displays by inkjet-printing.