• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.803-806
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• 1998

A novel bipolar circuit technique for realizing linear transconductor is described. The proposed circuit has superior linearity and temperature characteristics when compared with the conventional transconductor. The theory of operation is presented and computer simulation results are used to verify theoretical predections. The simulation results show close agreement between predicted behaviours and experimental performances.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.967-970
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• 1999

A novel linear transconductor for low-voltage low-power signal processing is proposed. The transconductor consists of a pnp differential-pair and a npn differential-pair which are biased by local negative feedback. The simulation results show that the transcondcutor with transconductance of 50 $mutextrm{s}$ has a linearity error of 0.05% and the power dissipation is 2.44 ㎽ over an input linear range from -2V to +2V at supply voltage $\pm$3V.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.1
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• pp.40-48
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• 2000

1A novel bipolar linear transconductor and its application to operational transconductance amplifier(OTA) for low-voltage low-power signal processing is proposed. The transconductor consists of a npn differential-pair with emitter degeneration resistor and a pnp differential-pair connected to the npn differential-pair in cascade. The bias current of the pnp differential-pair is used with the output current of the npn differential-pair for wide linearity and temperature stability. The OTA consists of the linear transconductor and a translinear current cell followed by three current mirrors. The proposed transconductor has superior linearity and low-voltage low-power characteristics when compared with the conventional transconductor. The experimental results show that the transconductor with transconductance of 50 ${\mu}S$ has a linearity error of less than ${\pm}$0.06% over an input voltage range from -2V to +2V at supply voltage ${\pm}$3V. Power dissipation of the transconductor was 2.44 mW. A prototype OTA with a transconductance of 25 ${\mu}S$ has been built with bipolar transistor array. The linearity of the OTA was same as the proposed transconductor. The OTA circuit also exhibits a transconductance that is linearly dependent on a bias current varying over four decades with a sensitivity of 0.5 S/A.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.4
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• pp.20-30
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• 2001

A novel 200 MHz CMOS transconductor using translinear cells is proposed. The proposed transconductor consists of voltage followers and current followers based on translinear cells and a resistor. For wide applications, a single-input single-output, a single-Input differential-output, and a fully-differential transconductor are systematically designed, respectively. The theory of operation is described and computer simulation results are used to verify theoretical predictions. The results show that the fully-differential transconductor has a linear input voltage range of ${\pm}2.7$ V, a 3 dB frequency of 200 MHz, and a temperature coefficient of less than 41 $ppm/^{\circ}C$ at supply voltages of ${\pm}3$ V. In order to certify the applicability of the fully-differential transconductor, A ladder-type 3th-order cllitic low pass filter is also designed based on the inductance simulation method. The filter has a ripple bandwidth of 22 MHz, a pass-band ripple of 0.36 dB, and a cutoff frequency of 26 MHz.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.11
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• pp.57-62
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• 1998

In this paper, tunable transconductor shows good linearity over a wide input voltage range are proposed. The proposed transconductor employ operating in the nonsaturation(ie., linear) region to improve circuit simplicity and tunability and 6.8V$\_$p-p/ wide input range. Also the circuit employ source-coupled differential pair to provide true differential input and can achieve both positive and negative transconductance values. The proposed circuits are implemented using a 1.2 $\mu\textrm{m}$ single poly double metal n-well CMOS technology. The THD characteristic of proposed circuit is less than 1% for a differential input voltage of up to 6V$\^$p-p/ when supply bias condition is V$\_$DD/=-V$\_$ss/=5V, I$\_$B/=20, 40${\mu}$A, and frequency of input signal is 1KHz.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.547-548
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• 2008

Linearity improvement technique of transconductor is presented in the paper. In order to certify the linearity improvement of proposed transconductor, the 3rd-order Elliptic low-pass Gm-C filter which provides 5MHz cutoff is implemented by using the transconductor. According to the IIP3 measurement result of filters, proposed filter has higher IIP3 than normal source-degeneration filter; the In-band IIP3 of proposed and normal filter are 10.1 dBm and 7.5 dBm respectively. The filter is fabricated in 1P6M $0.18-{\mu}m$ CMOS while consuming the 3.3mW with 1.8 Vdd. The in-band input-referred noise voltage is $62.3{\mu}Vrms$ and the SFDR is 54.1 dB.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.37-44
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• 2007

A low-voltage high-linear bipolar OTA and its application to IF bandpass filter for GSM cellular telephone are presented. The OTA consists of a low-voltage linear transconductor, a translinear current gain cell, and three current mirrors. The bandpass filter is composed of two cascaded identical second-order bandpass filters, which consist of a resistor, a capacitor, and a grounded simulated inductor realized with two OTA's and a grounded capacitor. SPICE simulations using an 8 GHz bipolar transistor-array parameter show that the OTA with a transconductance of 1 mS exhibits a linearity error of less than ${\pm}2%$ over an input voltage range of ${\pm}0.65\;V$ at supply voltages of ${\pm}2.0\;V$. Temperature coefficient of the transconductance is less than $-90ppm/^{\circ}C$. The bandpass filter has a center frequency of 85 MHz and Q-factor of 80. Temperature coefficient of the center frequency is less than $-182ppm/^{\circ}C$. The power dissipation of the filter is 128 mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.1-7
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• 2007

Class AB bipolar linear transconductors for high frequency applications ire proposed. They consist of a voltage follower, a resistor, and a current follower. The follower circuits are realized by translinear cells or unity-gain buffers. The proposed transconductors are simulated using an 8 GHz bipolar transistor-arrary parameter. Simulation results show that the transconductor using translinear cells has better linearity than one using unity-gain buffers whereas the latter has better temperature stability and higher input resistance than the former. In order to test their high frequency applicability, the transconductors are used to implement an 4th order IF bandpass filter.

• ETRI Journal
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• v.31 no.5
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• pp.576-584
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• 2009

A novel tunable transconductor is presented. Input transistors operate in the triode region to achieve programmable voltage-to-current conversion. These transistors are kept in the triode region by a novel negative feedback loop which features simplicity, low voltage requirements, and high output resistance. A linearity analysis is carried out which demonstrates how the proposed transconductance tuning scheme leads to high linearity in a wide transconductance range. Measurement results for a 0.5 ${\mu}m$ CMOS implementation of the transconductor show a transconductance tuning range of more than a decade (15 ${\mu}A/V$ to 165 ${\mu}A/V$) and a total harmonic distortion of -67 dB at 1 MHz for an input of 1 Vpp and a supply voltage of 1.8 V.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.1
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• pp.83-90
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• 1994

In this paper, the GYRATOR circuit is designed by the highly linear MOS transconductor with the gain factor controllable by offset voltage, and the floating inductor, the floating resistor and the grounded resistor are simulated by the GYTATOR for VLSI. And for the design exmple, Butterworth filter is designed using this GYRATOR, and is conpensated by the frequency transformation for the frequency shift that due to non-ideal output impedance of transconductor.