• Journal of the Optical Society of Korea
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• 제20권6호
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• pp.698-703
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• 2016

We report a new all-optical flip-flop (AOFF) with a quite simple structure, using optical beating in an injection-locked Fabry-Perot laser diode (FP-LD) with optical bistability. While conventional AOFF methods using an injection-locked FP-LD require additional devices such as secondary FP-LDs or polarization controllers for reset operation, the proposed method can be implemented using only a single commercially available FP-LD with set and reset signals. The optical beating induces intensity fluctuations inside the FP-LD, and releases the locking state to the reset state. Even though we demonstrated the AOFF at 100 Mbit/s, we expect that its operation rate could extend to 10 Gbit/s, according to the limit of the FP-LD's frequency response.

• 전력전자학회논문지
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• 제21권4호
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• pp.351-355
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• 2016

Welding machines are high-capacity systems used in a low-frequency range using IGBT. As their system is similar to a large transformer, most welding machines suffer a great loss because of hard switching and vast leakage inductance. A voltage-balancing circuit is designed to overcome these shortcomings. This circuit can reduce the transformer size by making it into a high frequency and reducing the input voltage by half and by adopting a serial structure that connects two full-bridges in a series to use a MOSFET with a good property at high frequency. In addition, a Schottky diode is used in the primary rectifier to overcome the low efficiency of most welding machines. To use the Schottky diode with a reliably relatively low withstanding voltage, an active snubber is adopted to effectively limit the ringing voltage of the diode cut-off voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.377-377
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• 2007

A simplified integration process including packaging is presented, which enables the realization of the portable fluorescence detection system. A fluorescence detection microchip system consisting of an integrated PIN photodiode, an organic light emitting diode (OLED) as the light source, an interference filter, and a microchannel was developed. The on-chip fluorescence detector fabricated by poly(dimethylsiloxane) (PDMS)-based packaging had thin-film structure. A silicon-based integrated PIN photo diode combined with an optical filter removed the background noise, which was produced by an excitation source, on the same substrate. The active area of the finger-type PIN photo diode was extended to obtain a higher detection sensitivity of fluorescence. The sensitivity and the limit of detection (LOD S/N = 3) of the system were $0.198\;nA/{\mu}M$ and $10\;{\mu}M$, respectively.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 제14회 정기총회 및 03년 동계학술발표회
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• pp.148-149
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• 2003

The parasitic effects due to the current blocking layer limit the bandwidth of the semiconductor laser diode. Thus, the parasitic response of various blocking layers was analyzed. The inin type was the best choice for the leakage current reduction and the bandwidth expansion.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권7호
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• pp.388-393
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• 2000

Hydrogen-sensing behaviors of Pd- and Pt-SiC Schottky diodes, fabricated on the same SiC substrate, have been systematically compared and analyzed as a function of hydrogen concentration and temperature by I-V and$\DeltaI-t$ methods under steady-state and transient conditions. The effects of hydrogen adsorption on the device parameters such as the barrier height are investigated. The significant differences in their hydrogen sensing characteristics have been examined in terms of sensitivity limit, linearity of response, response rate, and response time. For the investigated temperature range, Pd-SiC Schottky diode shows better performance for H2 detection than Pt-SiC Schottky diode under the same testing conditions. The physical and chemical mechanisms responsible for hydrogen detection are discussed. Analysis of the steady-state reaction kinetics using I-V method confirmed that the atomistic hydrogen process is responsible for the barrier height change in the diodes.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 추계학술대회 논문집
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• pp.90-94
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• 2003

Recently, many nations have released standard such as IEC 1000-3-2 and IEEE 519 which impose a limit on the harmonic current drawn by equipment connected to AC line in order to prevent the distortion of an AC line. Among the wide variety of active methods for improving power factor and harmonic distortion, the boost converter is very effective because it has a continuous line current , small choke filter and high power factor. In high power application, however, the bridge diode loss in the boost converter has made the efficiency lower and the temperature of the board higher. A new approach without bridge diode to make the same characteristics of the conventional boost converter has also been developed. This paper present the comparisons between the continuous current mode(CCM) operated conventional boost converter and the boundary current mode(BCM) operated the bridgeless boost converter for high efficiency and high power factor.

• 조명전기설비학회논문지
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• 제26권3호
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• pp.31-39
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• 2012

This paper presents a high efficiency coupled inductor boost DC-DC converter that uses a simple clamp circuit and the coupled inductor and thus overcomes output voltage limit of the conventional boost converter. The proposed converter solves problems of voltage stress of the power semiconductor switch and reverse recovery of the output diode using a simple clamp circuit composed of a diode and a capacitor, and thus the converter improves its total efficiency. In this paper, the operational principle of the proposed converter is explained by each mode and then a design example for the prototype converter based on the explanation is shown. And good performance of the proposed converter is verified through experimental results of the prototype converter that is implemented with the designed circuit parameters.

• ETRI Journal
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• 제27권5호
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• pp.545-550
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• 2005

We have carried out the fabrications of a barrier layer on a polyethersulfon (PES) film and organic light emitting diode (OLED) based on a plastic substrate by means of atomic layer deposition (ALD). Simultaneous deposition of 30 nm $AlO_x$ film on both sides of the PES film gave a water vapor transition rate (WVTR) of $0.062 g/m^2/day (@38^{\circ}C,\;100%\;R.H.)$. Further, the double layer of 200 nm $SiN_x$ film deposited by plasma enhanced chemical vapor deposition (PECVD) and 20 nm $AlO_x$ film by ALD resulted in a WVTR value lower than the detection limit of MOCON. We have investigated the OLED encapsulation performance of the double layer using the OLED structure of ITO / MTDATA (20 nm) / NPD (40 nm) / AlQ (60 nm) / LiF (1 nm) / Al (75 nm) on a plastic substrate. The preliminary life time to reach 91% of the initial luminance $(1300 cd/m^2)$ was 260 hours for the OLED encapsulated with 100 nm of PECVD-deposited $SiN_x$ and 30 nm of ALD-deposited $AlO_x$.

• 한국항행학회논문지
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• 제9권1호
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• pp.1-8
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• 2005

본 논문에서는 차세대 근거리 실내 무선 환경 기술로 채택 가능성이 높은 UWB(Ultra Wideband)기술용 Impulse Generator를 SRD(Step Recovery Diode)를 이용하여 설계하였다. 설계 목표는 단순한 설계 구조와 함께 저가, 소형, 고성능의 Impulse Generator 개발에 있다. 미국의 FCC(Federal Communications Commission)의 기준인 주파수 범위 3.1~10.6 GHz, 출력 제한 레벨 -41.25 dBm을 만족하는 Impulse Generator를 회로 시뮬레이터인 Agilent Technologies사의 ADS를 이용하여 설계, 제작, 측정하였다. 설계된 회로의 출력 신호는 단일밴드용과 멀티밴드용으로 구분하였다.