• Information and Communications Magazine
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• v.26 no.5
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• pp.3-9
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• 2009

본 고에서는 현재 IEEE 802.15.7 TG VLC에서 본격적으로 논의되고 있는 가시광 무선통신의 응용 서비스 모델 중에서 LED(Light Emitting Diode) 조명과 통신이 융합된 응용 서비스 모델을 중심으로 알아본다. LED를 이용한 통신 기술은 광 케이블을 이용한 유선 광통신에서 이미 시작된 기술이나 LD를 이용하여 더 우수한 성능을 보이면서 잊혀져가던 기술중하나이다. 이러한 광통신 기술은 LED의 성능이 급격하게 증가하면서 다시금 주목을 받게 되었고, 특히 LED를 이용한 조명기술이 발전하면서 무선통신으로 다시금 주목받고 있는 기술이다. 실내 환경에서 LED 조명 고유의 기능을 그대로 유지하면서 무선통신을 가능하게 하고, 항공기 혹은 병원내에서와 같이 기존의 RF무선통신에 제약을 받는 환경에서도 무선통신이 가능하게 하며, 실내 LED 조명을 이용함으로써 국부지역에 특정 서비스 제공이 가능해 졌다. 따라서 가시광 무선통신은 조명산업과의 융합을 통해 통신뿐만 아니라 기존의 조명과 디스플레이 분야에서 새로운 가치를 창출 할 수 있는 그린 IT융합 기술이다. 본 고에서는 LED조명의 등장배경, 위치 정보 제공 서비스, 국부 방송 서비스, 항공기내 무선통신 서비스 등 LED 조명 기술과 통신기술이 융합된 가시광 무선통신의 응용 서비스 모델에 대하여 설명한다.

• Information and Communications Magazine
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• v.26 no.5
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• pp.43-49
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• 2009

본 고에서는 반도체 LED(Light Emitting Diode)를 이용한 가시광 무선통신 기술에 대한 국내외 표준 동향을 기술한다. 가시광 무선통신은 조명 및 통신을 융합함으로써 녹색성장 저탄소의 효과가 있으며, 생활의 불편함이 없이 저탄소를 실현할 수 있다. 저탄소 LED는 조명 인프라를 바꾸는 신성장 기술로 급부상하고 있다. LED는 백열전등에 비하여 전기 절감 효과가 높고, 형광등에 비하여 수은을 사용하지 않아 친환경적이다. 통신 및 조명 환경 변화에 부응한 기술로서, LED 조명과 동시에 통신을 할 수 있는 가시광 무선통신 융합 기술이 등장하였다. 본 고에서는 조명과 통신의 전혀 다른 산업이 융합된 기술로 탄생하게 된 기술적 배경, 가시광 무선통신의 국내 TTA 표준 및 국제 IEEE 802.1.57 표준 동향 등을 설명한다.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.10-14
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• 2003

Flexible displays such as plastic-based liquid crystal displays (LCDs) and organic light-emitting diode displays (OLEDDs) have been researched and developed at KETI since 1997. The plastic film substrate is very weak to heat and pressure compared to glass substrate, that its fabrication process is limited to 110$^{\circ}C$ and low pressure. The ITO films were deposited on the bare plastic film substrate by rf-magnetron sputtering. Moreover, in order to maintain uniform cell gap and pressure on the plastic film substrate, we utilized newly-invented jig and fabrication process. Electro-optical characteristics were better than or equivalent to those of typical glass LCDs though it is thinner, lighter-weight, and more robust than glass LCDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.42-42
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• 2010

Deep-trenched photonic crystals passing through InGaN/GaN quantum well structural layer have been fabricated on the surface of GaN-based light emitting diode(LED) using by electron beam nanolithography. The lattice constant and hole diameter of the photonic crystals are 230nm and 140nm, respectively. The structural and electro-optical properties have been investigated by scanning electron microscope(SEM) and power-current-voltage(L-I-V). Electroluminescence from GaN-based LED with deep-trenched photonic crystal shows the higher intensity than that without photonic crystal.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.391-392
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• 2008

A SPICE-based 3-dimensional circuit model of Light-Emitting Diode(LED) was modified include the reverse breakdown properties. The new model is found to be accurate to study the failure mechanisms of LEDs under electrostatic discharge (ESD) and electronic overstress (EOS). It was found that the permanent damages under heavy reverse stress is mainly due to the high electric field strength in P-GaN layer.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1149-1152
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• 2003

Now a days, many different kinds of display technologies such as Liquid Crystal Display (LCD), Organic Light Emitting Diode (OLED), and Liquid Crystal On Silicon (LCOS) are designed. And these display technologies will be used in many application products like High Definition Televisions (HDTVs) or mobile devices. In this paper, pattern generation circuit for display test is proposed. The proposed circuit will be embedded in the control circuit of display chip. Two differenct kinds of patterns is generated by the circuit. One is block pattern for color test, and the other is line pattern for pixel test. The shape of test pattern is determined by the values of registers in pattern generation circuit. The circuit is designed using Verilog HDL RTL code.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.3
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• pp.11-17
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• 1978

A medium scale integrated circuit, BCD to seven segment decoder/driver is designed and fabricated by employing P-channel metal-oxide-semiconductor technology. The device configuration is specifically designed for a common cathode seven segment LED display unit. The decoder logic is composed of two serially connected read-only-memory matrices and the LED drivers are implemented with wide channel FET's. The fabricated integrated circuit performed successfully with a supply voltage between -7 Volt and -26 Volt and the non-uniformity of the LED segment current is about 10%.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2011.06a
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• pp.181-181
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• 2011

본 논문에서는 기존 $18W{\times}2$등용 형광등기구 대체 22 W급 LED 등기구를 제작하고, 소비전력, 총광속, 광효율 및 빔각 등 전기 광학적 특성을 분석하였다. 배광데이터에 기초하여 선실을 대상으로 시뮬레이션을 수행한 결과, 소비전력은 60 % 감소하고 평균조도는 134 % 증가하였으며, 균제도는 기존 형광 등기구와 동일하게 나타났다.

• Biomedical Science Letters
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• v.16 no.4
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• pp.331-339
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• 2010

This study aims to evaluate the effect of Photodynamic Therapy (PDT) against methicillin-resistant Staphylococcus aureus with high-level mupirocin resistance (Hi-Mup MRSA). To examine the antimicrobial effect of photogem-mediated PDT against Hi-Mup MRSA, CFU quantifications, bacteria cell viability tests, and disk diffusion antimicrobial susceptibility tests were evaluated. In addition, one of PDT mechanisms was investigated by accumulating photogem ($10\;{\mu}g/ml$) in Hi-Mup MRSA. Photogem-mediated PDT properly inhibited the colony formation of Hi-Mup MRSA. Viable bacteria decreased greatly after a PDT application with photogem $10\;{\mu}g/ml$ at energy density $15\;J/cm^2$. The diameter of the inhibition zone around susceptible disks increased after PDT. In addition, we confirmed the accumulation of photogem in bacteria through fluorescent images. These results demonstrated that excellent photosensitization of Hi-Mup MRSA can be achieved using photogem with 630 nm LED irradiation. Thus, PDT may make survival Hi-Mup MRSA inactive.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.7-10
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• 2016

The post cleaning method for clean the shadow mask using in OLED (organic light emitting diode) emitter layer is always reforming. The cleaning solution and analysis method of shadow mask is still lack and not optimized. We use the simple and useful analytical method to determine the quantity and quality of organic and inorganic residue on surface of shadow mask. Finally analyze the cleaning solution using Raman spectroscopy efficiently.