• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.49.1-49.1
• /
• 2011

태양전지 모듈의 25년 이상 보증을 위해 태양전지 모듈을 구성하는 부품 소재의 신뢰성이 부각되고 있다. 현재까지 알려진 태양전지 모듈용 에틸렌 아세테이트 비닐(ethylene Vinyl Acetate, EVA)의 주요 열화 메카니즘은 황변(yellowing)과 박리(delaminaation)이다. 따라서 본 연구에서는 태양전지 모듈을 구성하는 재료 중 EVA 소재의 열화 메커니즘을 도출하기 위해 이미 알려진 스트레스 인자를 이용한 가속 열화시험을 설계한 후 가속열화시험을 실시하였으며, 이로부터 EVA의 열화 메카니즘을 규명하였다. 열화모드 재현을 위해 소형 태양광 모듈을 제작하였으며, Weather-Ometer를 이용하여 열화시험을 수행하였다. 시험조건은 4종 Phase가 1 사이클이 되도록 실험하였으며, Dark 조건 1 Phase 및 Light 조건 3 Phase 조건으로 실시하였다. 태양전지 모듈의 열화량은 매 500 사이클 마다 Light I-V 변화량을 측정하여 분석하였다. EVA의 물리 화학적 열화분석을 위해 단면분석, 적외선분광기(Fourier Transform-Infra Red, FT-IR) 및 주사전자현미경을 이용하여 열화 특성에 대한 분석을 실시하였고, 이를 근거로 EVA의 열화 메커니즘을 규명하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1440-1442
• /
• 2005

We have fabricated vertical type organic thin film transistors (OTFTs) using organic semiconductor materials such as F16CuPc, NTCDA, PTCDI C-8 and C60. The layers of OTFT were fabricated by vacuum evaporation technique and spin casting method onto the Indium Tin Oxide (ITO) coated glass. I-V characteristics and on-off ratios of the fabricated OTFTs were investigated. In addition, we have fabricated light emitting transistor using MEH-PPV and then investigated EL electroluminescent properties.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1281-1282
• /
• 2008

Low cost TCO(Transparent Conductive oxide) thin films were prepared by 3" DC/RF magnetron sputtering systems. For the AZO preparation processes a 99.99% AZO target (Zn: 98 wt.%, $Al_2O_3$: 2 wt.%) was used. In order to verify feasibility of the AZO thin films to organic light emitting device (OLED) application, test organic light emitting device was fabricated based on AZO as TCO, TPD as hole transporting layer (HTL), Alq3 as both emitting layer (EML) and electron transporting layer (ETL), and aluminium as cathode, where the both ITO and AZO surfaces were treated using $O_2$ RF plasma. The I-V characteristics of the AZO/TPD/Alq3/Al OLEDs were evaluated. As the results, the performance of the OLEDs with AZO as transparent conducting anode could be useable.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.126-129
• /
• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1727-1729
• /
• 2000

We has investigated the birefringence by the assisted electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Photoinduced birefringence has been studied in a chalcogenide material. We induced this thin films using linearly polarized He-Ne laser light(633nm) and detected polarized semiconductor laser light(780nm). To investigate the effect of electric field, various bias voltages applied. The result is shown that the birefringence has a higher value in +2V than others. We obtained the birefringence in the electric field effects by various voltages.

• Transactions on Electrical and Electronic Materials
• /
• v.3 no.1
• /
• pp.1-3
• /
• 2002

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.126-129
• /
• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.9-10
• /
• 2007

In this paper, we investigated the effect of solar cell breakage on maximum output power of PV module. The test result using artificial light source didn't give any change in output power in case of crack near electrical ribbon. Also, there was a reduction in output power in case of increasing of crack area far from electrical ribbon. But, this experiment is under artificial light source test method. So, when such a PV module is outdoor for a long time, there would be problems on electrical output power and durability because of thermal aging phenomenon of solar cell breakage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.367-367
• /
• 2007

Polymer/nanoparticle hybrids have been increasingly studied because of their enhanced properties for organic light emitting devices (OLEDs). In this study, we made poly(p-phenylene vinylene) (PPV) nanohybrid films by incorporation of Ag and $SiO_2$ nanoparticles into the PPV. A possible interaction between nanoparticles was investigated and especially we focused whether there is a change in the interaction between $SiO_2$ or Ag nanoparticles and matrix or not. The current characteristics of PPV nanohybrid films were analyzed by I-V and EL measurements. The optical properties were also investigated by UV-Vis spectroscopy and photoluminescence measurements.

• Current Photovoltaic Research
• /
• v.6 no.4
• /
• pp.94-101
• /
• 2018

Light elevated temperature induced degradation (LeTID) was noted as an issue in multi-crystalline silicon solar cells (MSSC) by Ram speck in 2012. In contrast to light induced degradation (LID), which has been researched in silicon solar cells for a long time, research about both LeTID and the mechanism of LeTID has been limited. In addition, research about LeTID in single-crystalline silicon solar cells (SSSC) is even more limited. In order to improve understanding of LeTID in SSSC with a passivated emitter rear contact (PERC) structure, we fabricated four group samples with boron and oxygen factors and evaluated the solar cell characteristics, such as the cell efficiency, $V_{oc}$, $I_{sc}$, fill factor (FF), LID, and LeTID. The trends of LID of the four group samples were similar to the trend of LeTID as a function of boron and oxygen.