• Nuclear Engineering and Technology
• /
• v.54 no.3
• /
• pp.984-990
• /
• 2022

Corrosion release behavior of Alloy 690 in high-temperature water was investigated under the conditions of injected Zn concentrations of 0 ppb, 10 ppb and 50 ppb. A protective oxide film composed of Zn(Fe_xCr_1-x)₂O₄ and Cr₂O₃ was formed with Zn injection, resulting in a better corrosion resistance. In comparison with the Zn-free condition, the corrosion release rate under the Zn-injection conditions was smaller. The corrosion release inhibiting factors were 1.7 and 1.9 under the conditions of 10 ppb and 50 ppb Zn-injection respectively. A foreseen application of the corrosion and corrosion release rates has been proposed and discussed.

• KSTLE International Journal
• /
• v.10 no.1_2
• /
• pp.23-26
• /
• 2009

In this work the tribological characteristics were compared between ZnO coatings on glass substrate prepared by sputtering and sol-gel methods. In order to assess the effects of processing method on the tribological characteristics, the friction and wear properties of the coatings were measured by using a reciprocating type of micro-tribotester. The sputtered ZnO coatings were prepared on a glass substrate at room temperature, $150^{\circ}$, and $300^{\circ}$. The ZnO coatings prepared by sol-gel method were heat-treated in air atmosphere at $550^{\circ}$ for one hour. The crystal structure and surface morphology of the coatings were measured by X-ray diffraction (XRD) and Atomic Force Microscope (AFM), respectively. The experimental results showed that overall the sputtered coatings exhibited better friction and wear properties than coatings prepared by sol-gel method. The sputtered coating grown at room temperature had a relatively low friction coefficient of 0.14 and superior wear resistance compared with the other coatings. Nevertheless, sol-gel method of coating ZnO on glass is beneficial for economical coating of a large surface area.

• Journal of the Korean Ceramic Society
• /
• v.29 no.4
• /
• pp.253-258
• /
• 1992

ZnO varistors were prepared by the organochemical method which used citric acid and ethylene glycol as gelling agents. The microstructure of the sintered specimens exhibited small grains, uniform grain size distribution, and few intragranular pores. Thermal decomposition of the organic resin formed during the powder preparation process was completed around 450$^{\circ}C$. No significant changes were observed in microstructure and current voltage characteristic with respect to calcination temperatures. A major advantage of the organochemical method used in this experiment is a possible uniform mixing of trace amounts of dopants. Therefore, this powder preparation method seems promising in investigating the effect of Li or In ion, which is added in ppm level to ZnO varistors, on the pulse respose characteristic.

• Electrical & Electronic Materials
• /
• v.10 no.1
• /
• pp.1-7
• /
• 1997

SAW filter has been used in mobile communication device, bandpass filter and resonator for merits )f miniaturization and high reliability. Materials for substrate mainly used single crystal such as LiNbO$_{3}$, LiTaO$_{3}$, ZnO. In this study, it was attempted that LiNbO$_{3}$ was substituted for piezoelectric ceramics(PZT4, PZT5A and PZT8) which had simple fabrication process because fabrication of crystal is difficult and it's cost is high. SAW filters were fabricated by the photolithography on piezoelectric ceramics substrates in order to compare their characteristics with LiNbO$_{3}$'s. The experimental value of center frequency was compared with theoretical one. The average difference of center frequency was 3.7%. PZT8 showed the best bandwidth properties among them. It is considered that PZT8 has higher mechanical quality factor and propagation velocity than others.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.11-11
• /
• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Journal of Environmental Health Sciences
• /
• v.14 no.1
• /
• pp.11-22
• /
• 1988

Calcium oxide, lithium oxide and titanium oxide were investigated as additives of zinc oxide for the removal of hydrogen sulfide at high temperature. This experiment was performed in the range of 1.0-2.0 vol.% H$_2$S concentration at 623-873 K reaction temperature, using a thermogravimetric analyzer. A pore blocking model was found to fit the reaction rate and the kinetics data were sucessfully expressed by this model. The reactions between additive sorbents and hydrogen sulfide were first order with respect to hydrogen sulfide concentration in a gaseous mixture with nitrogen. Among the used sorbents, ZnO-CaO 0.5 at.% and ZnO-TiO$_2$ 2.0 at.% sorbents had the best additive effects on the sulfidation reaction between additive sorbents and hydrogen sulfide, whereas the ZnO-Li$_2$O sorbents were ineffective.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.3
• /
• pp.303-307
• /
• 2022

Magnetoelectric (ME) properties of 3-0 type particulate composites have been investigated with respect to application features for reliable magnetic sensitivity and magnetically-induced output voltage. In order to figure out the magnetoelectric characteristics in the ME composites, frequency dependent ME responses were studied from [0.948 Na_0.5K_0.5NbO₃-0.052 LiSbO₃]-[Co_1-xZn_xFe₂O₄] (NKNLS)/Co_1-xZn_xFe₂O₄ (CZFO, x=0, 0.1, and 0.2). As a result, the maximal α_ME of 23.15 mV/cm·Oe was achieved from the NKNLS-CZFO (x_Zn = 0.1) composites at resonance frequency of 315 kHz and H_dc = 0 Oe. From the frequency dependent ME responses, it is clearly described that the self-biased ME composites can be used for applications as both magnetic sensors and energy harvesters, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.8
• /
• pp.632-635
• /
• 2011

Additions (ZnO, CuO) doped $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$ (0.98NKN-0.02LST-x) lead free piezoelectric ceramics have been fabricated by ordinary sintering technique. The effects of additions doping on the dielectric, piezoelectric, and ferroelectric properties of the ceramics were mainly investigated. X-ray diffraction of the sample appeared orthorhombic phase. The specimen doped with additions exhibits enhanced electrical properties ($d_{33}$= 153 pC/N). These results indicate that the 0.98NKN-0.02LST-x ceramics is a promising candidate for lead-free piezoelectric ceramics for applications such as piezoelectric actuators, harmonic oscillator and so on.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.4
• /
• pp.1182-1190
• /
• 2014

$Cd_{1-x}Zn_xS$-sensitized $K_4Nb_6O_{17}$ composite photocatalysts (designated $Cd_{1-x}Zn_xS/K_4Nb_6O_{17}$) were prepared via a simple deposition-precipitation method. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDS), $N_2$ sorption, ultraviolet-visible light diffuse reflectance spectroscopy (UV-Vis DRS), photoluminescence measurements (PL), and X-ray photoelectron spectroscopy (XPS). The $Cd_{0.8}Zn_{0.2}S$ particles were scattered on the surface of $K_4Nb_6O_{17}$, and had a relatively uniform size distribution around 50 nm. The absorption edge of $K_4Nb_6O_{17}$ was shifted to the visible light region and the recombination of photo-generated electrons and holes suppressed after $Cd_{0.8}Zn_{0.2}S$ loading. The $Cd_{0.8}Zn_{0.2}S$(25 wt %)/$K_4Nb_6O_{17}$ composite possessed the highest photocatalytic activity for hydrogen production under visible light irradiation, evolving 8.278 mmol/g in 3 h. Recyclability tests were performed, and the composite photocatalysts were found to be fairly stable. The mechanism of charge separation between the photogenerated electrons and holes at the $Cd_{0.8}Zn_{0.2}S/K_4Nb_6O_{17}$ composite was discussed.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.58 no.4
• /
• pp.615-618
• /
• 2009

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin film on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 800 [W]. Sheet resistance and surface roughness of ITO and ZnO thin film were measured by Hall-effect measurement system and AFM, respectively. The sheet resistance of ITO and ZnO thin film were 7.290 [$\Omega$] and 4.882 [$\Omega$], respectively. and surface roughness were 3.634 [nm] and 0.491 [nm], respectively. Green OLED was fabricated with the structure of TPD(400 [$\AA$])/Alq3(600 [$\AA$])/LiF(5 [$\AA$])/Al(1200 [$\AA$]). Turn-on voltage of green OLED applied ITO was 7 [V] and luminance was 7,371 [$cd/m^2$]. And, Turn-on voltage of green OLED applied ZnO was 14 [V] and luminance was 6,332 [$cd/m^2$].