• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.244.1-244.1
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• 2013

The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.138-143
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• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• 대한핵의학회:학술대회논문집
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• 2003.11a
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• pp.11.2-11.2
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.178-178
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.120-120
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• 2002

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.119-120
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• 2006

• Journal of Microbiology and Biotechnology
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• v.25 no.9
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• pp.1467-1475
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• 2015

The use of microbial extracts containing plant hormones is a promising technique to improve crop growth. Little is known about the effect of bacterial cell-free extracts on plant growth promotion. This study, based on phytohormonal analyses, aimed at exploring the potential mechanisms by which Enterococcus faecium LKE12 enhances plant growth in oriental melon. A bacterial strain, LKE12, was isolated from soil, and further identified as E. faecium by 16S rDNA sequencing and phylogenetic analysis. The plant growth-promoting ability of an LKE12 bacterial culture was tested in a gibberellin (GA)-deficient rice dwarf mutant (waito-C) and a normal GA biosynthesis rice cultivar (Hwayongbyeo). E. faecium LKE12 significantly improved the length and biomass of rice shoots in both normal and dwarf cultivars through the secretion of an array of gibberellins (GA₁, GA₃, GA₇, GA₈, GA₉, GA₁₂, GA₁₉, GA₂₀, GA₂₄, and GA₅₃), as well as indole-3-acetic acid (IAA). To the best of our knowledge, this is the first study indicating that E. faecium can produce GAs. Increases in shoot and root lengths, plant fresh weight, and chlorophyll content promoted by E. faecium LKE12 and its cell-free extract inoculated in oriental melon plants revealed a favorable interaction of E. faecium LKE12 with plants. Higher plant growth rates and nutrient contents of magnesium, calcium, sodium, iron, manganese, silicon, zinc, and nitrogen were found in cell-free extract-treated plants than in control plants. The results of the current study suggest that E. faecium LKE12 promotes plant growth by producing GAs and IAA; interestingly, the exogenous application of its cell-free culture extract can be a potential strategy to accelerate plant growth.

• ETRI Journal
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• v.13 no.4
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• pp.35-41
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• 1991

저전력 고집적 GaAs 디지틀 IC에 적합한 기본 논리회로인 DCFL (Direct Coupled FET Logic) 을 구현하기 위한 소자로 WSi게이트 MESFET 공정을 연구하였으며, 이와 함께 TiPtAu 게이트 소자를 제작하였다. MESFET 의 제작은 내열성게이트를 이용한 자기정렬 이온주입 공정을 사용하였으며 주입된 Si 이온은 급속열처리 방법으로 활성화하였다. 또한 제작공정중 저항성 접촉의 형성은 절연막을 이용한 리프트 - 오프 공정을 이용하였다. 제작된 WSi게이트 MESFET은 $1\mum$ 게이트인 경우 222mS/mm의 트랜스컨덕턴스를 나타내어 우수한 동작특성과 집적회로 공정의 적합성을 보였으며 이와 동등한 공정조건으로 제작된 TiPtAu 게이트 MESFET 은 2" 기판 내에서 84mV의 임계전압 변화를 나타내었다.

• Journal of the Korean Society of Food Science and Nutrition
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• v.33 no.8
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• pp.1286-1293
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• 2004

This study was conducted to investigate the biological activity and hepatoprotective effect of various fractions and isolated compounds from Kochiae fructus (KF) extract on D-galactosamine (GaIN)-intoxicated rats. Male Sprague-Dawley rats were divided into control, GaIN treated group (GaIN), GaIN plus KF methanol extract treated group (KFM 200-GaIN), GaIN plus KF butanol extract treated group (KFB 200-GaIN), GaIN plus momordin Ic treated group (Momordin Ic 30-GaIN) and GaIN plus oleanolic acid treated group (Oleanolic acid 30-GaIN). KFM (200 mg/kg BW), KFB (200 mg/kg BW), momordin Ic (30 mg/kg BW) and oleanolic acid (30 mg/kg BW) were orally administered once a day for 14 days. GaIN (400 mg/kg BW) was injected at 30 minutes after the final administration of the compounds. The activities of serum aspartate aminotransferase and alanine aminotransferase were increased in the GaIN group compared to the control group and significantly lower in the KFB 200-GaIN, momordin Ic 30-GaIN and oleanolic acid 30-GaIN group than in the GaIN group. Hepatic lipid peroxide level was increased in the GaIN group compared to the control group and was lower in the KFM 200-GaIN, KFB 200-GaIN, momordin Ic 30-GaIN and oleanolic acid 30-GaIN group than in the GaIN group. Activities of xanthine oxidase and aldehyde oxidase in liver were higher in the GaIN group than in the control group and were significantly decreased in the KFB 200-GaIN, momordin Ic 30-GaIN and oleanolic acid 30-GaIN group compared to the GaIN group. Hepatic glutathione, ${\gamma}$-glutamylcysteine synthetase and catalase activities were decreased in the GaIN group compared to the control group and were higher in the KFB 200-GaIN, momordin Ic 30-GaIN and oleanolic acid 30-GaIN group than in the GaIN group. Activities of hepatic glutathione reductase, glutathione S-transferase, superoxide dismutase and glutathione peroxidase were lower in the GaIN group than in the control group and were improved in the KFM 200-GaIN, KFB 200-GaIN, momordin Ic 30-GaIN and oleanolic acid 30-GaIN group compared to the GaIN group. Therefore, the current results indicate that momordin Ic administration alleviated the GaIN-induced adverse effect through enhancing the antioxidant enzyme activities.