• 충청수학회지
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• 제34권3호
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• pp.221-234
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• 2021

We introduce high-order Hopfield neural networks with Leakage delays. Furthermore, we study the uniqueness and existence of Hopfield artificial neural networks having the weighted pseudo almost periodic forcing terms on finite delay. Our analysis is based on the differential inequality techniques and the Banach contraction mapping principle.

• 충청수학회지
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• 제35권1호
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• pp.39-52
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• 2022

We introduce Clifford-valued neural networks with leakage delays. Furthermore, we study the uniqueness and existence of Clifford-valued Hopfield artificial neural networks having the Stepanov weighted pseudo almost periodic forcing terms on leakage delay terms. However the noncommutativity of the Clifford numbers' multiplication made our investigation diffcult, so our results are obtained by decomposing Clifford-valued neural networks into real-valued neural networks. Our analysis is based on the differential inequality techniques and the Banach contraction mapping principle.

• 한국산업정보학회논문지
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• 제21권1호
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• pp.17-25
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• 2016

본 논문은 동기회로에서 누설 전류를 줄이기 위해서 사용되는 파워 스위치 구조를 결합한 새로운 구조의 저전력 비동기 회로 설계 방법을 제안하고자 한다. Static 방식, Semi-static 방식과 같은 기존의 지연 무관방식의 비동기 방식과 비교해서 다소 속도의 손해는 있지만, 파워 스위치에 의해서 데이터가 없는 상태에서는 누설 전력을 줄일 수 있고, 전체 사이즈가 작아짐으로써 데이터가 입력되는 순간의 스위칭 전력도 줄일 수 있는 장점이 있다. 따라서, 제안된 방법은 속도보다 저전력을 기본으로 하는 사물인터넷 시스템에서 요구되는 전전력 설계 방법이 될 것이다. 본 논문에서는 새로운 방식의 비동기 회로를 사용하여 $4{\times}4$곱셈기를 0.11um 공정으로 설계하고, 기존의 비동기 방식의 곱셈기와 스피드, 누설 전류, 스위칭 파워, 회로 크기 등을 비교하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권1호
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• pp.131-144
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• 2015

An extensive investigation of the influence of gate engineering on the CNTFET switching, high frequency and circuit level performance has been carried out. At device level, the effects of gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. It is revealed that hetero - material - gate CNTFET(HMG - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, and is more suitable for use in low power and high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the performance parameters of circuits have been calculated and the optimum combinations of ${\Phi}_{M1}/{\Phi}_{M2}/{\Phi}_{M3}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product(PDP). We show that, compared to a traditional CNTFET - based circuit, the one based on HMG - CNTFET has a significantly better performance (SNM, energy, PDP). In addition, results also illustrate that HMG - CNTFET circuits have a consistent trend in delay, power, and PDP with respect to the transistor size, indicating that gate engineering of CNTFETs is a promising technology. Our results may be useful for designing and optimizing CNTFET devices and circuits.

• 한국산업정보학회논문지
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• 제18권5호
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• pp.59-65
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• 2013

저전력 설계를 요구하는 디지털 시스템에서는 동적 전력(dynamic power)과 누설 전력(leakage power) 사이의 균형을 이루는 점에 근접하는 매우 낮은 전압에서 작동하는 디지털 설계 방식을 요구하지만, 기존의 동기방식의 회로는 낮은 전압에서 지연(delay)이 급격히 증가하여 시스템의 전체 성능을 유지할 수 없을 뿐만 아니라, 공정, 전압, 온도 변이 (PVT variation) 등에 크게 영향을 받아서 올바른 동작을 기대할 수 없다. 따라서 본 논문에서는 낮은 전압에서 여러 가지 변이들에 영향을 받지 않는 비동기회로 설계 방식 중에 타이밍 분석이 요구되지 않고, 설계가 간단한 NCL (Null Convention Logic) 방식을 사용한 저전력 산술논리 연산장치 (ALU) 회로를 매그나칩-SK하이닉스 0.18um 공정으로 설계하고, 기존의 파이프라인 방식의 ALU와 스피드와 전력에 관해서 비교하였다.

• Restorative Dentistry and Endodontics
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• 제46권1호
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• pp.3.1-3.14
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• 2021

Objectives: This study aimed to evaluate the interface between a calcium silicate cement (CSC), Biodentine and dental adhesives in terms of sealing ability. Materials and Methods: Microleakage test: 160 standardized class II cavities were prepared on 80 extracted human molars. The cavities were filled with Biodentine and then divided into 2 experimental groups according to the time of restoration: composite resin obturation 15 minutes after Biodentine handling (D0); restoration after 7 days (D7). Each group was then divided into 8 subgroups (n = 5) according to the adhesive system used: etch-and-rinse adhesive (Prime & Bond); self-etch adhesive 2 steps (Optibond XTR and Clearfil SE Bond); self-etch adhesive 1 step (Xeno III, G-aenial Bond, and Clearfil Tri-S Bond); and universal used as etch-and-rinse or self-etch (ScotchBond Universal ER or SE). After thermocycling, the teeth were immersed in a silver nitrate solution, stained, longitudinally sectioned, and the Biodentine/adhesive percolation was quantified. Scanning electron microscopic observations: Biodentine/adhesive interfaces were observed. Results: A tendency towards less microleakage was observed when Biodentine was etched (2.47%) and when restorations were done without delay (D0: 4.31%, D7: 6.78%), but this was not significant. The adhesives containing 10-methacryloyloxydecyl dihydrogen phosphate monomer showed the most stable results at both times studied. All Biodentine/adhesive interfaces were homogeneous and regular. Conclusions: The good sealing of the CSC/adhesive interface is not a function of the system adhesive family used or the cement maturation before restoration. Biodentine can be used as a dentine substitute.

• Advances in nano research
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• 제15권6호
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• pp.521-531
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• 2023

Quantum-dot cellular automata (QCA) has shown great potential in the nanoscale regime as a replacement for CMOS technology. This work presents a specific approach to static random-access memory (SRAM) cell based on 2:1 multiplexer, 4-bit SRAM array, and 32-bit SRAM array in QCA. By utilizing the proposed SRAM array, a single-layer 16×32-bit SRAM with the read/write capability is presented using an optimized signal distribution network (SDN) crossover technique. In the present study, an extremely-optimized 2:1 multiplexer is proposed, which is used to implement an extremely-optimized SRAM cell. The results of simulation show the superiority of the proposed 2:1 multiplexer and SRAM cell. This study also provides a more efficient and accurate method for calculating QCA costs. The proposed extremely-optimized SRAM cell and SRAM arrays are advantageous in terms of complexity, delay, area, and QCA cost parameters in comparison with previous designs in QCA, CMOS, and FinFET technologies. Moreover, compared to previous designs in QCA and FinFET technologies, the proposed structure saves total energy consisting of overall energy consumption, switching energy dissipation, and leakage energy dissipation. The energy and structural analyses of the proposed scheme are performed in QCAPro and QCADesigner 2.0.3 tools. According to the simulation results and comparison with previous high-quality studies based on QCA and FinFET design approaches, the proposed SRAM reduces the overall energy consumption by 25%, occupies 33% smaller area, and requires 15% fewer cells. Moreover, the QCA cost is reduced by 35% compared to outstanding designs in the literature.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권1호
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.