• Title/Summary/Keyword: Leakage currents

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Effects of re-stress after anneal on oxide leakage (열처리 후 가해진 스트레스가 산화막 누설전류에 미치는 영향)

  • 이재호;김병일
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.593-596
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    • 1998
  • Effects of current re-stress after anneal on leakage current and trapped charges in oxides are investigated. Current stress on 6 nm thick oxide has generated mostly positive traps within the oxide resulting in leakage currents. The interface states generated are several orders of magnitude smaller, determined by C-V and charge pumping method. Annealing has eliminated only the charged traps not the neutral traps, thus the leakage current and trap density are increased when the oxides are re-stressed.

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A New Method for Resistive Leakage Current Measurement (새로운 저항성 누전전류 측정 방법)

  • Ham, Seung-Jin;Hahn, Song-Yop;Koh, Chang-Seop
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.8
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    • pp.1397-1404
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    • 2007
  • It is important to measure the resistive component separately from the total leakage current at power distribution line. It is because electric disasters such as electric shock and fire are caused mainly by the resistive component of the total leakage current. In this paper, a new theory for measuring the resistive component separately from the total leakage current is suggested, and is embodied to an actual circuit using operational amplifiers, analog switch and R-C low pass filter. Through experiments for various cases containing both the resistive and capacitive leakage currents, the suggested algorithm is confirmed to be able to measure the resistive leakage current within 4.1% of error even when the capacitive leakage current is much bigger than the resistive one. The suggested method is expected to lower the total cost because it can be realized using simple and cheap devices, and implies the measuring time can be possibly reduced because the resistive leakage current is computed exactly from the signals during only a half period of power voltage.

Low Leakage Input Vector Searching Techniques for Sequential Circuits (시퀀셜 회로를 위한 리키지 최소화 입력 검색방법)

  • Lee, Sung-Chul;Shin, Hyun-Chul;Kim, Kyung-Ho
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.655-658
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    • 2005
  • Due to reduced device sizes and threshold voltages, leakage current becomes an important issue in CMOS design. In a CMOS combinational logic circuit, the leakage current in the standby state depends on the state of the inputs and thus can be minimized by applying an optimal input when the circuit is idling. In this paper, we present a New Input Vector Control algorithm, called Leakage Minimization by Input vector Control (LMIC) for minimal leakage power. This algorithm finds the minimal leakage vector and reduces leakage current up to 22.% on the average, for TSMC 0.18um process parameters. Minimal leakage vectors are very useful in reducing leakage currents in standby mode of operation.

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ZnO Arrester Diagnosis by Measurement of Temperature (온도측정에 의한 산화아연형 피뢰기 진단)

  • Kim Gyung-Suk;Han Ju-Seop;Song Jae-Yong;Seo Hwang-Dong;Moon Seung-Bo;Park Tae-Gone
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.8
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    • pp.361-364
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    • 2005
  • In this paper, surface temperatures of ZnO arresters as a function of ambient temperatures and leakage currents were experimentally investigated. The variations of the leakage current was below 10 uA, which comes about $4.5\%$ of the normal leakage current. Temperature differences between the ambient and the surface of arresters were not shown until $150\%$ to the normal leakage current, and were remarkable over $200\%$. From the results, we deduced a couple of polynomials which enables the calculation of the leakage current by the measurement of surface temperature. Tests on used arresters have shown the same results as the experimental one. Also, we expect that an arrester diagnosis is possible by measuring the surface temperature of them after more studies on the effect of wind, moisture penetration, and arrester types.

Correlation between Capacitance and Structure-optical Properties of Semiconductor with Zero Leakage Current (누설전류 Zero인 반도체 물질의 구조적 광학적 특성과 전도성과의 상관성)

  • Yun, Tae Hwan;Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.14 no.3
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    • pp.27-31
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    • 2015
  • It was the electrical properties of ZnS treated by the annealing in a vaccum and an atmosphere conditions to reseached the leakage current effect of semiconductor devices. Most samples were shown the non-linear with unipolar properties, but the ZnS annealed at $100^{\circ}C$ in a vaccum was only observed no leakage current in a range of -20 V< voltage < 15 V. The crystallinity of ZnS with no leakage current was improved and optical property was also improved. Because the ambipolar characteristics and low leakage currents originated from the extension effect of a depletion width by electron-hole combination in the depletion layer.

Suppression of Leakage Current and Distortion in Variable Capacitance Devices and their Application to AC Power Regulators

  • Katsuki, Akihiko;Oki, Takuya
    • Journal of Power Electronics
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    • v.16 no.1
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    • pp.66-73
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    • 2016
  • The quantity of alternating current (AC) leakage and the value of distortion factor in capacitor currents are discussed with regard to a new power component called variable capacitance device (VCD). This component has terminals for controlling its capacitance. Nonlinear dielectric characteristics are utilized in this device to vary the capacitance. When VCD operates in an AC circuit, the AC leakage from this device through direct current (DC) control voltage source increases according to the conditions of DC control voltage and so on. To solve this problem, we propose techniques for suppressing AC leakage. Although VCD has strong nonlinear characteristics, the current through the capacitor is not distorted significantly. The relations between AC leakage and the distortion in current waveforms are investigated. An application example for an AC power regulator is also introduced to evaluate the distortion in waveforms.

Characteristic Changes of ZnO Arrester Blocks by Multiple-lightning Impuse Currents (다중 뇌충격전류에 의한 산화아연형 피뢰기 소자의 특성 변화)

  • Gil, Gyeong-Seok;Han, Ju-Seop
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.12
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    • pp.685-690
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    • 2000
  • Multiple-lightning impulse currents are a general feature of the lightning ground f=flash. It is therefore necessary for lightning arresters used in power systems to be estimated by applying not only a single-lightning impulse current but also a multiple-lightning impulse currents. This paper presents the effects of multiple-lightning impulse currents on deterioration of ZnO arrester blocks. The multiple-lightning impulse generator which can produce quadruple 8/20$[\mus]$ 5[kA] with separation time of 30~120[ms] is designed and fabricated. The total energy applied to the arrester block at each impulse is about 1,200[J]. In experiment, various parameters such as leakage current component, reference voltage, and temperature are measured with the number of applied impulse current. Also, micro-structure changes of the ZnO blocks after applying the single and the multiple-lightning impulse currents of 200 times are compared. The experimental results indicate that the types of arrester blocks are more vulnerable to deterioration or damage by multiple-lightning impulse currents.

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On the Gate Oxide Scaling of Sub-l00nm CMOS Transistors

  • Seungheon Song;Jihye Yi;Kim, Woosik;Kazuyuki Fujihara;Kang, Ho-Kyu;Moon, Joo-Tae;Lee, Moon-Yong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.2
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    • pp.103-110
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    • 2001
  • Gate oxide scaling for sub-l00nm CMOS devices has been studied. Issues on the gate oxide scaling are reviewed, which are boron penetration, reliability, and direct tunneling leakage currents. Reliability of Sub-2.0nm oxides and the device performance degradation due to boron penetration are investigated. Especially, the effect of gate leakage currents on the transistor characteristics is studied. As a result, it is proposed that thinner oxides than previous expectations may be usable as scaling proceeds. Based on the gate oxide thickness optimization process we have established, high performance CMOS transistors of $L_{gate}=70nm$ and $T_{ox}=1.4nm$ were fabricated, which showed excellent current drives of $860\mu\textrm{A}/\mu\textrm{m}$ (NMOS) and $350\mu\textrm{A}/\mu\textrm{m}$ (PMOS) at $I_{off}=10\mu\textrm{A}/\mu\textrm{m}$ and $V_dd=1.2V$, and CV/I of 1.60ps (NMOS) and 3.32ps(PMOS).

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Diagnostic Techniques of Lightning Arresters for DC Electric Traction Vehicles (직류전동차용 피뢰기 진단기술)

  • Kil Gyung-Suk;Song Jae-Yong;Kim Il-Kwon;Moon Seung-Bo;Shin Gwang-Chul
    • Journal of the Korean Society for Railway
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    • v.9 no.4 s.35
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    • pp.357-361
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    • 2006
  • This paper dealt with the performance evaluation and the diagnostic techniques of lightning arresters for DC electric traction vehicle. Field Measurements on the protective operation of lightning arresters against surge currents were carried out on running vehicles to acquire the data necessary for the diagnosis. The frequency and the magnitude of surge events were analyzed. Surge currents of $1\sim3$ times were recorded in one running service route and their magnitudes were ranges of $150A\sim2kA$. Also, an acceleration experiment on a lightning arrester by the standard lightning impulse current of 8/20 us and 5 kA was performed to know the aging characteristics. After the surge current application of 3,000 times, the reference voltage decreased by 4.5 %, and the leakage current was below 10 uA at the continuous operating voltage and about 50 uA at the rated voltage. From the experimental results, we propose a decision level of leakage current for the arrester used in this paper and designed an arrester tester which analyzes arrester condition by the magnitude of leakage current.

Leakage Current Measurement and Management of Arresters Installed in Feeder Lines (급전선로에 설치되어 있는 피뢰기의 누설전류 측정과 관리방안)

  • Han Ju-Seop;Seo Hwang-Dong;Kil Gyung-Suk;Han Moon-Seob;Jang Dong-Uk
    • Proceedings of the KSR Conference
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    • 2005.05a
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    • pp.819-824
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    • 2005
  • This paper describes the measurement result of leakage current flowing arresters connected in feeder lines to propose an optimal management method. Twenty seven arresters set in seven areas were analyzed on a regular basis for 4 months. The results showed that the RMS and the peak value of the total leakage currents for soundness arresters were a range of $200uA{\sim}00uA$. respectively. During the period of measurement, the magnitude of the leakage current didn't show conspicious changes and there were impossible places to analyze arrester's status due to including high THD rate in a feeder line, From the study, leakage current measurement has to be performed at a condition without running an electric train in the line, and the allowable RMS value of soundness arrester is bellow 600uA.

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