• 제목/요약/키워드: Lead-free glass frit

검색결과 11건 처리시간 0.026초

필러 첨가에 의한 OLED의 레이저 실링용 P2O5-V2O5-ZnO 유리프릿의 제조 (Synthesis of P2O5-V2O5-ZnO Glass Frit for Laser Sealing of OLED by the Addition of Filler)

  • 방재철
    • 한국전기전자재료학회논문지
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    • 제28권9호
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    • pp.571-576
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    • 2015
  • In this study, we developed a lead-free $P_2O_5-V_2O_5-ZnO$ glass frit for sealing OLED using laser irradiation. The frit satisfied the characteristics required for laser sealing such as low glass transition temperature, low coefficient of thermal expansion (CTE), high water-resistance, and high absorption at the wavelength of the laser beam. Ceramic fillers were added to the glass frit in order to further reduce and match its CTE with that of the commercial glass substrate. The addition of Zirconium Tungsten Phosphate (ZWP) to the frit yielded the most desirable results, reducing the CTE to $45.4{\times}10^{-7}/^{\circ}C$, which is very close to that of the glass substrate ($44.0{\times}10^{-7}/^{\circ}C$). Successful formation of a solid sealing layer was observed by optical and scanning electron microscopy.

Ag계 도체 및 RuO2계 저항체 페이스트의 특성에 미치는 무연계 글라스 프릿트 조성의 영향 (Effect of Lead Free Glass Frit Compositions on Properties of Ag System Conductor and RuO2 Based Resistor Pastes)

  • 구본급
    • 한국전기전자재료학회논문지
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    • 제24권3호
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    • pp.200-207
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    • 2011
  • Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

Lead free, Low temperature sealing materials for soda lime glass substrates in Plasma Display Panel (PDP)

  • Lee, Heon-Seok;Hwang, Jong-Hee;Lim, Tae-Young;Kim, Yoon-Hee;Lee, Suk-Hwa;Kim, Il-Won;Lee, Jong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.373-376
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    • 2008
  • New glass compositions for lead free, low temperature sealing glass frit was examined in $ZnO-V_2O_5-P_2O_5$ glass system which can be used sealing material for PDP to be made of soda lime glass substrates. Among many glass compositions, KFS-C glass showed low glass transition point (Tg) and good fluidity and adhesion characteristics when it was tested by flow button method at low temperature of $420^{\circ}C$. Its Tg was $317^{\circ}C$ and thermal expansion coefficient (CTE) was $70{\times}10^{-7}/K$. The glass frit was mixed with an organic vehicle to make a paste and it was dispensed and sealed with soda lime glass substrates at $420^{\circ}C$ for 10min. Sealed glass panels also showed good adhesion strength even sealed at low temperature of $420^{\circ}C$.

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유리 분말과 함께 소결한 (Na,K)NbO3계 압전체의 미세구조 및 전기적 특성 (Microstructures and Electrical Properties of (Na,K)NbO3-Based Piezoceramics Sintered with Glass Frit)

  • 피지희;권순용
    • 한국전기전자재료학회논문지
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    • 제26권9호
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    • pp.646-650
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    • 2013
  • $(Na,K)NbO_3$-based piezoelectric ceramics were synthesized by a liquid phase sintering method with a selected glass frit. The effects of the content of the glass frit and the sintering temperature on the microstructure and the electrical properties of the samples were investigated. With the 0.1 wt% of glass frit content, $(Na_{0.52}K_{0.44}Li_{0.06})(Nb_{0.84}Ta_{0.10}Sb_{0.06})O_3$ (NKL-NTS) ceramics showed the maximum values of the relative density (99.1%) and the electro-mechanical coupling factor ($k_p$: 0.32) at the sintering temperature of $1,050^{\circ}C$. It might mean that a liquid phase sintering with a suitable glass frit having the lower flow temperature could improve the relative density and the piezoelectric properties.

무연계 도체 및 저항체 페이스트의 특성에 미치는 프릿트 조성의 영향 (Effect of Frit Compositions on Properties of Lead Free Conductor and Resistor Pastes)

  • 김빛나;염미래;구본급
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.335-335
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    • 2010
  • $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $ZrO_2$, $Bi_2O_3$를 이용하여 성질이 다른 두 종류의 무연계 프릿트를 제조하여 특성을 표준화 하였고, 이들 무연계 프릿트를 이용하여 Ag계 도체 및 $RuO_2$계 저항페이스트롤 제조하여 특성에 미치는 프릿트 조성의 영향을 연구하였다. $B_2O_3$를 첨가하여 퍼짐특성이 큰 프릿트의 경우 더 우수한 페이스트 특성을 나타내었다.

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금속 필러가 첨가된 Pb-B-O계 유리와 Ni-Cr 합금 와이어 간의 전기 화학적 반응과 단락 거동 (Electrochemical Reaction and Short-Circuit Behavior between Lead Borate Glass Doped with Metal Filler and Ni-Cr Alloy Wire)

  • 최진삼;다타치카 나까야마
    • 한국재료학회지
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    • 제31권8호
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    • pp.471-479
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    • 2021
  • The electrochemical reaction between lead borate glass frit doped with Sn metal filler and Ni-Cr wire of a J-type resistor during a term of Joule heating is investigated. The fusing behavior in which the Ni-Cr wire is melted is not observed for the control group but measured for the Sn-doped specimen under 30 V and 500 mA. The Sn-doped lead borate glass frit shows a fusing property compared with other metal-doped specimens. Meanwhile, the redox reaction significantly contributes to the fusing behavior due to the release of free electrons of the metal toward the glass. The electrons derived from the glass, which used Joule heat to reach the melting point of Ni-Cr wire, increase with increasing corrosion rate at interface of metal/glass. Finally, the confidence interval is 95 ± 1.959 %, and the adjusted regression coefficient, R in the optimal linear graph, is 0.93, reflecting 93% of the data and providing great potential for fusible resistor applications.

무연계 Ag 외부전극재의 열충격에 따른 열화특성과 고장해석 (Degradation and Failure Analysis of Lead-free Silver Electrodes with Thermal Cycling)

  • 김정우;윤동철;이희수;전민석;송준광
    • 한국전기전자재료학회논문지
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    • 제21권5호
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    • pp.434-439
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    • 2008
  • Silver pastes as the outer electrodes have been prepared using Pb-free glass frits with different content of $Bi_2O_3$ and the effects of glass composition on the degradation behaviors of the Ag electrodes were investigated using the change of adhesion between Ag electrode and alumina substrate with thermal cycle stress. Low adhesion and high surface resistance were observed in Ag electrode using glass frit with a $Bi_2O_3$ content of 60 wt%, owing to the open microstructure formed at the firing temperature of $600^{\circ}C$. When the $Bi_2O_3$ was increased to 80 wt% in the glass frit, the Ag electrodes had a dense microstructure with high adhesion and a low surface resistance. Delamination of the Ag electrodes was a major failure mode under thermal cycle stress and this was attributed to residual stress due to the thermal expansion mismatch between the Ag electrode and the alumina substrate.

저온실링용 ZnO-V2O5-P2O5계 봉착재의 물성에 미치는 TiO2 의 영향 (Effect of TiO2 on the Properties of ZnO-V2O5-P2O5 Low Temperature Sealing Glasses)

  • 이헌석;황종희;임태영;김진호;이석화;김일원;김남석;김형순
    • 한국재료학회지
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    • 제19권11호
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    • pp.613-618
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    • 2009
  • We designed new compositions for lead free and low temperature sealing glass frit of $ZnO-V_2O_5-P_2O_5$ system, which can be used for PDP (Plasma Display Panel) or other electronic devices. The $ZnO-V_2O_5-P_2O_5$ system can be used as a sealing material at temperatures even lower than 430$^{\circ}C$. This system, however, showed lower bonding strength with glass substrate compared to commercialized Pb based sealing materials. So, we added $TiO_2$ as a promoter for bonding strength. We examined the effect of $TiO_2$ addition on sealing behaviors of $ZnO-V_2O_5-P_2O_5$ glasses with the data for flow button, wetting angle, temporary & permanent residual stress of glass substrate, EPMA analysis of interface between sealing materials and glass substrate, and bonding strength. As a result, sealing characteristics of $ZnO-V_2O_5-P_2O_5$ system glasses were improved with $TiO_2$ addition, but showed a maximum value at 5 mol% $TiO_2$ addition. The reason for improved bonding characteristics was considered to be the chemical interaction between glass substrate and sealing glass, and structural densification of sealing glass itself.

저온 소결용 NTC 서미스터의 제조 및 특성 (Fabrication and characteristics of NTC thermistor for low temperature sintering)

  • 구본급
    • 한국결정성장학회지
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    • 제28권1호
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    • pp.28-37
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    • 2018
  • 저온에서 소성이 가능한 NTC 서미스터의 제조를 위해 $Mn_{1.85}Ni_{0.25}Co_{0.9}O_4$ 기본 조성의 NTC 서미스터의 전기적 특성에 미치는 무연계 프릿트(frit)와 $RuO_2$ 첨가의 영향에 대하여 연구하였다. 기본 NTC 조성에 프릿트를 10 wt% 첨가하여 $1000^{\circ}C$에서 소결한 시편의 소결특성이 프릿트를 첨가하지 않고 $1200^{\circ}C$에서 소결한 시편과 유사하였다. 그러나 프릿트의 첨가량이 증가할수록 전기저항과 B 정수는 높게 나타났다. 저항을 낮추기 위해 프릿트를 10 wt% 첨가한 조성에 $RuO_2$를 0, 2, 5 wt% 첨가하여 $1000{\sim}1200^{\circ}C$에서 소결하여 NTC 서미스터를 제조 한 후 소결 및 전기적 특성을 측정하였다. $RuO_2$ 첨가량이 많을수록 전기저항과 B 정수는 감소하는 경향을 나타내었으나, $RuO_2$를 5 wt% 첨가하여 $1000^{\circ}C$의 소결온도에서 소결한 소결체가 저항이 가장 낮았고 이후 소결온도 증가에 따라 저항은 오히려 증가하는 경향을 나타내었다. 기본 NTC 조성에 10 wt%의 프릿트와 5 wt%의 $RuO_2$를 첨가하여 $1000^{\circ}C$에서 소결한 NTC 서미스터가 프릿트를 첨가하지 않은 기본 조성의 NTC를 $1200^{\circ}C$에서 소결한 경우와 소결특성과 전기적 특성이 유사하였다.

SnO-P2O5계 유리에서 P2O5를 B2O3로 치환시 구조와 물성에 미치는 영향 (Effects of Substituting B2O3 for P2O5 on the Structure and Properties of SnO-P2O5 Glass Systems)

  • 김동환;황차원;김남진;임상혁;구동건;김태희;차재민;류봉기
    • 한국세라믹학회지
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    • 제48권1호
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    • pp.63-68
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    • 2011
  • The investigation is directed to lead free (Pb-free) frits that can be used for organic light emitting diode, plasma display screen devices and other sealing materials. $P_2O_5$-SnO system glasses have been prepared for Pb-free low temperature glass frit. Structure and properties of the glasses with the composition SnO-$xB_2O_3-(60-x)P_2O_5$ (x=0, 5, 10, 15, 20, 25, 30, 35, 40 mol%) were characterized by infrared spectra (IR), X-ray diffraction(XRD), Density, Molar volume, Thermo mechanical analysis(TMA) and weight loss after immersion test. Glass transition temperature($T_g$), dilatometric softening temperature($T_d$) and chemical durability increased, and coefficient of thermal expansion($\alpha$) decrease with the substitution of $B_2O_3$ for $P_2O_5$ in the range of 0~25 mol%.