• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.12
• /
• pp.75-84
• /
• 2001

Due to the high density of integration in current integrated circuit layouts, circuit elements must be designed to minimize the effect of parasitic elements and thereby minimize the factors which can degrade circuit performance. Thus, before making a chip, circuit designers should check whether the extracted netlist is correct, and verify from a simulation whether the circuit performance satisfies the design specifications. In this paper, we propose a new block disassembly technique which can extract the geometric parameters of stacked MOSFETs and the distributed RCs of layout blocks. After applying this to the layout of a folded-cascode CMOS operational amplifier, we verified the connectivity and the effect of the components by simulating the extracted netlist with HSPICE.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.65 no.1
• /
• pp.88-96
• /
• 2016

In this paper, the GaN FET based phase-shift full-bridge dc-dc converter design is implemented. Switch characteristics of GaN FET were analyzed in detail by comparing state-of-the-art Si MOSFET. Owing to the low conduction resistance and parasitic capacitance, it is expected to GaN FET based power conversion system has improved performance. However, GaN FET is vulnerable to electric interference due to the relatively low threshold voltage and fast switching transient. Therefore, it is necessary to consider PCB layout to design GaN FET based power system because PCB layout is the main reason of stray inductance. To reduce the electric noise, gate voltage of GaN FET is analyzed according to operation mode of phase-shift full-bridge dc-dc converter. Two 600W phase-shifted full-bridge dc-dc converter are designed based on the result to evaluate effects of stray inductance.

• Journal of Advanced Information Technology and Convergence
• /
• v.10 no.1
• /
• pp.37-43
• /
• 2020

This paper presents analysis of passive metal interconnection of the LNA block in CMOS integrated circuit. The performance of circuit is affected by the geometry of RF signal path. To investigate the effect of interconnection lines, a cascode LNA is designed, and circuit simulations with full-wave electromagnetic (EM) simulations are executed for different positions of a component. As the results, the position of an external capacitor (C_ex) changes the parasitic capacitance of electric coupling; the placement of component affects the circuit performance. This analysis of interconnection line is helpful to analyze the amount of electromagnetic coupling between the lines, and useful to choose the signal path in the layout design. The target of this work is the RF LNA enabling the seamless connection of wireless data network and the following standards have to be supported in multi-band (WCDMA: 2.11~ 2.17 GHz, CDMA200 1x : 1.84~1.87 GHz, WiBro : 2.3~2.4GHz) mobile application. This work has been simulated and verified by Cadence spectre RF tool and Ansoft HFSS. And also, this work has been implemented in a 0.13um RF CMOS technology process.

• Journal of Power Electronics
• /
• v.17 no.2
• /
• pp.561-569
• /
• 2017

Power converter design requires simulation accuracy. In addition to the requirement of accurate models of power semiconductor devices, this paper highlights the role of considering a very good description of the converter circuit layout for an accurate simulation of its electrical behavior. This paper considers a simple experimental circuit including one switching cell where a MOSFET transistor controls the diode under test. The turn-off transients of the diode are captured, over which the circuit wiring has a major influence. This paper investigates the necessity for accurate modeling of the experimental test circuit wiring and the MOSFET transistor. It shows that a simple wiring inductance as the circuit wiring representation is insufficient. An adequate model and identification of the model parameters are then discussed. Results are validated through experimental and simulation results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.3
• /
• pp.183-189
• /
• 2010

In this paper, the trench gate emitter switched thyristor(EST) withl trench gate electrode is proposed for improving snap-back effect which leads to a lot of problems in device applications. The parasitic thyristor which is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The dual trench gate allows homogenous current distribution in the EST and preserves the unique feature of the gate controlled current saturation of the thyristor current. The characteristics of the 1700 V forward blocking EST obtained from two-dimensional numerical simulations (MEDICI) is described and compared with that of a conventional EST. we carried out layout, design and process of EST devices.

• Journal of Power Electronics
• /
• v.9 no.2
• /
• pp.308-319
• /
• 2009

An increasing number of power electronic applications require high power density. Therefore, the switching frequency and switching speed have to be raised considerably. However, the very fast switching transients induce a strong voltage and current ringing. In this work, a novel damping concept is introduced where the parasitic wiring inductances are advantageously magnetically coupled with a damping layer for attenuating these unwanted oscillations. The proposed damping layer can be implemented using standard materials and printed circuit board manufacturing processes. The system behavior is analyzed in detail and design guidelines for a damping layer with optimized RC termination network are given. The effectiveness of the introduced layer is determined by layout parasitics which are calculated by application of the Partial Element Equivalent Circuit (PEEC) simulation method. Finally, simulations and measurements on a laboratory prototype demonstrate the good performance of the proposed damping approach.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.3
• /
• pp.109-114
• /
• 2004

This paper proposes an advanced circuit for the fingerprint sensor signal processing. We increased the voltage between ridge and valley by modifying the parasitic capacitance eliminating circuit of sensor plate. The analog comparator was designed for comparing the sensor signal voltage with the reference signal voltage. We also propose an effective isolation strategy for removing noise and signal coupling of each sensor pixel. The fingerprint sensor circuit was designed and simulated, and the layout was performed.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.23 no.6
• /
• pp.981-987
• /
• 1986

This paper describes the CIREX(CIRcuit EXtractor), an automated CMOS circuit extraction program which provides SPICE2 input file by computing circuit connectivity and transistor dimensions from the CIF file. The CIREX also computes parasitic capacitance and resistance which makes it a valuable tool for timing analysis and detailed circuit simulation. A lattice model is used to calculate the interconnection resistances and substrate capacitances which can be replaced, as an option, by a node model for the worst case timing analysis of the circuit.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.10 no.5
• /
• pp.455-461
• /
• 2017

In this paper, a local DL (Data Line) sensing method with smaller parasitic capacitance replacing the previous distributed DB sensing method with large parasitic capacitance is proposed to reduce the time to transfer BL (Bit Line) voltage to DL in the read mode. A new BL switching circuit turning on NMOS switches faster is also proposed. Furthermore, the access time is reduced to 35.63ns from 40ns in the read mode and thus meets the requirement since BL node voltage is clamped at 0.6V by a DL clamping circuit instead of precharging the node to VDD-VT and a differential amplifier are used. The layout size of the designed 512Kb EEPROM memory IP based on a $0.13{\mu}m$ BCD is $923.4{\mu}m{\times}1150.96{\mu}m$ ($=1.063mm^2$).

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.2
• /
• pp.40-50
• /
• 2010

The studies of PMOS transistors in CMOS technologies are reviewed- focusing on the snapback and breakdown behavior of the parasitic PNP BJTs in high current regime. A new failure mechanism of PMOSFET devices under ESD conditions is also analyzed by investigating various I/O structures in a $0.13\;{\mu}m$ CMOS technology. Localized turn-on of the parasitic PNP transistor can be caused by localized charge injection from the adjacent diodes into the body of the PMOSFET, significantly degrading the ESD robustness of PMOSFETs. Based on 2-D device simulations the critical layout parameters affecting this problem are identified. Design guidelines for avoiding this new PMOSFET failure mode are also suggested.