• Title/Summary/Keyword: LayerProbe

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Characteristics of MEMS Probe Tip with Multi-Rhodium Layer (이중 로듐 층을 갖는 멤스 프로브 팁의 특성)

  • Park, Dong-Gun;Park, Yong-Joon;Lim, Seul-Ki;Kim, Il;Shin, Sang-Hun;Cho, Hyun-Chul;Park, Seung-Pil;Kim, Dong-Won
    • Journal of the Korean institute of surface engineering
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    • v.45 no.2
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    • pp.81-88
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    • 2012
  • Probe tip, which should have not only superior electrical characteristics but also good abrasion resistance for numerous contacts with semiconductor pads to confirm their availability, is essential for MEMS probe card. To obtain good durability of probe tip, it needs thick and crack-free rhodium layer on the tip. However, when the rhodium thickness deposited by electroplating increased, unwanted cracks by high internal stress led to serious problem of MEMS probe tip. This article reported the method of thick Rh deposition with Au buffer layer on the probe tip to overcome the problem of high internal stress and studied mechanical and electrical properties of that. MEMS probe tip with double-Rh layer had good contact resistance and durability during long term touch downs.

TEMPERATURE DISTRIBUTION OF THE IONOSPHERIC PLASMA AT FLAYER

  • Rhee, Hwang-Jae
    • Journal of Astronomy and Space Sciences
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    • v.14 no.2
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    • pp.269-274
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    • 1997
  • Langmuir probe was housed in the sounding rocket to test the probe's performance and to find the environmental parameters at the F layer of the ionosphere. The gold plated cylindrical probe had a length of 14㎝ and a diameter of 0.096 ㎝. The applied voltage to the probe consisted of 0.9 sec fixed positive bias followed by 0.1 sec of down/up sweep. This ensured that the probe swept through the probe's current-voltage characteristic at least once during 1 second quiescent periods enabling the electron temperature to be measured during the undisturbed times of the flight. The experimental results showed good agreement of the temperature distribution with IRI model at the lower F layer. In the upper layer, the experimental temperatures were 100-200K lower than the IRI model's because of the different geomagnetic conditions: averaged conditions were used in IRI model and specific conditions were reflected in the experiment.

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Elastic Buffer Layer Coupled Micro Probe (탄성 버퍼층 결합형 마이크로 프로브)

  • Choi, Ju Chan;Choi, Young Chan;Jung, Dong Geon;Kong, Seong Ho
    • Journal of Sensor Science and Technology
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    • v.22 no.5
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    • pp.374-378
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    • 2013
  • In this paper, a new structure of probe unit is designed and fabricated with PDMS, which is well-known elastic material, as a buffer layer for increasing overdrive force and mechanical strength. In general, PDMS is widely used as actuation material due to its elasticity and compatibility of fabrication process. In this work, PDMS layer is chosen for mechanical elasticity of the proposed probe unit. We achieved the high overdrive force by placing PDMS buffer layer under the silicon based cantilever due to its elasticity. Moreover, the relation between prove length and overdrive force was measured by experiment in this work. Therefore, the various specifications of the micro prove unit can be designed by using the results of this work.

Fabrication of Tip of Probe Card Using MEMS Technology (MEMS 기술을 이용한 프로브 카드의 탐침 제작)

  • Lee, Keun-Woo;Kim, Chang-Kyo
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.4
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    • pp.361-364
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    • 2008
  • Tips of probe card were fabricated using MEMS technology. P-type silicon wafer with $SiO_2$ layer was used as a substrate for fabricating the probe card. Ni-Cr and Au used as seed layer for electroplating Ni were deposited on the silicon wafer. Line patterns for probing devices were formed on silicon wafer by electroplating Ni through mold which formed by MEMS technology. Bridge structure was formed by wet-etching the silicon substrate. AZ-1512 photoresist was used for protection layer of back side and DNB-H100PL-40 photoresist was used for patterning of the front side. The mold with the thickness of $60{\mu}m$ was also formed using THB-120N photoresist and probe tip with thickness of $50{\mu}m$ was fabricated by electroplating process.

An electric conductive-probe technique for measuring the liquid fuel layer in the intake manifold

  • Kajitani, S.;Sawa, N.;Rhee, K.T.;Hayashi, S.
    • 제어로봇시스템학회:학술대회논문집
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    • 1990.10b
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    • pp.1184-1189
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    • 1990
  • In order to investigate liquid fuel filming over the intake manifold wall, an electrode-type probe has been developed by lines of authors and this probe was employed in a single cylinder two and four-stroke cycle engine and in a four cylinder four-stroke engine operated by neat methanol fuel. The performance of the probe was dependent upon several parameters including the liquid fuel layer thickness, temperature, additive in the fuel, and electric power source (i.e., AC and voltage level) and was independent of other variables such as direction of liquid flow with respect to the probe arrangement. Several new findings from this study may be in order. The flow velocity of the fuel layer in the intake manifold of engine was about (if the air velocity in the steady state operation, the layer thickness of liquid fuel varied in both the circumferential and longitydinal directions. In the transient operation of the engine, the temporal variation of fuel thickness was determined, which clearly suggests that there was difference between fuel/air ratio in the intake manifold and that in the cylinder. The variation was greatly affected by the engine speed, fuel/air ratio and throttle opening. And the variation was also very significant from cylinder to cylinder and it was particularly strong different engine speeds and throttle opening.

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Analysis for Shielding Effectiveness of Metal Shielding Layer within Near-Field of Noise Source (노이즈 소스 근거리장에 위치한 금속 차폐막의 차폐효과 분석)

  • Lee, Won-Seon;Lee, Won-Hui;Hur, Jung
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.19 no.3
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    • pp.59-65
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    • 2019
  • The EMI shielding effectiveness of the shielding layer thickness was analyzed when the metal shielding layer was placed in the near field of the magnetic probe and the noise source. Microstrip lines were used as noise source, and graphite and ferrite were selected as metal shielding materials. The magnetic probe uses the electromagnetic radiation measurement method using the magnetic probe by applying the IEC 61967-6 method. The transmission coefficient between the microstrip line and the magnetic probe was analyzed. The distance between the two was 1 mm for a single shielding layer and 5 mm for a multiple shielding layer. The thickness of the shielding layer was changed to 5 um, 10 um, 30 um, and 50 um. When the frequency was changed from 150 kHz to 1 GHz, a maximum shielding effectiveness (SE) of 44.9 dB was obtained.

A Study on PZT-5A Probe for Nondestructive Inspection (비파괴검사를 위한 PZT-5A 탐촉자에 관한 연구)

  • 황현석
    • Electrical & Electronic Materials
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    • v.10 no.2
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    • pp.119-125
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    • 1997
  • In this study, piezoelectric transducers were designed and manufactured using PZT-5A which had relatively high electromechanical coefficient, nondestructive testing system was developed which was able to inspect automatically using stepping motors, PC-Lab, and PC-Scope. The optimum design conditions for NDT were presented and verified comparing PZT-5A probes with comercial probes. It was proved by simulation and experiments that Epoxy is a good material as matching and backing layers. The envelope was reduced 60% with matching layer and 76% with matching and backing layer. NDT was successfully carried out for aluminum test pieces. Distance error of PZT-5A probe was 2.8%.

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Influence of Flow Conditions on a Boundary Layer to the Near-Wake of a Flat Plat (평판 경계층 유동조건이 근접후류에 미치는 영향)

  • Kim, D.H.;Chang, J.W.
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.1625-1630
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    • 2004
  • An experimental study was carried out to investigate influence of flow conditions on a boundary layer to the near-wake of a flat plate. The flow condition in the vicinity of trailing edge that is influenced by upstream condition history is an essential factor that determines the physical characteristics of a near-wake. Various tripping wires were used to change boundary layer flow condition of upstream at the freestream velocity of 6.0 m/sec. Measurements of the boundary layer and near-wake according to the change of upstream conditions were conducted by using both I-probe(55P14 for boundary layer) and X-probe(55P61 for wake). Normalized velocity profiles of the boundary layer were shown the flow types such as laminar boundary layer, transition, and turbulent boundary layer at 0.95C from the leading edge. The velocity and turbulence intensity profiles of the near-wake for the case of laminar boundary layer at the flat plate surface exhibited a defect and a double peak showing perfect symmetry, respectively.

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Formation Mechanisms of Sn Oxide Films on Probe Pins Contacted with Pb-Free Solder Bumps (무연솔더 범프 접촉 탐침 핀의 Sn 산화막 형성 기제)

  • Bae, Kyoo-Sik
    • Korean Journal of Materials Research
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    • v.22 no.10
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    • pp.545-551
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    • 2012
  • In semiconductor manufacturing, the circuit integrity of packaged BGA devices is tested by measuring electrical resistance using test sockets. Test sockets have been reported to often fail earlier than the expected life-time due to high contact resistance. This has been attributed to the formation of Sn oxide films on the Au coating layer of the probe pins loaded on the socket. Similar to contact failure, and known as "fretting", this process widely occurs between two conductive surfaces due to the continual rupture and accumulation of oxide films. However, the failure mechanism at the probe pin differs from fretting. In this study, the microstructural processes and formation mechanisms of Sn oxide films developed on the probe pin surface were investigated. Failure analysis was conducted mainly by FIB-FESEM observations, along with EDX, AES, and XRD analyses. Soft and fresh Sn was found to be transferred repeatedly from the solder bump to the Au surface of the probe pins; it was then instantly oxidized to SnO. The $SnO_2$ phase is a more stable natural oxide, but SnO has been proved to grow on Sn thin film at low temperature (< $150^{\circ}C$). Further oxidation to $SnO_2$ is thought to be limited to 30%. The SnO film grew layer by layer up to 571 nm after testing of 50,500 cycles (1 nm/100 cycle). This resulted in the increase of contact resistance and thus of signal delay between the probe pin and the solder bump.