• Title/Summary/Keyword: Layer-by-Layer Deposition Method

Search Result 690, Processing Time 0.027 seconds

Fabrication of SmBCO superconducting coated conductor using 100m class batch-type co-evaporation method (100m 급 batch-type co-evaporation 증착장치를 이용한 SmBCO 초전도테이프 제조)

  • Kim, H.S.;Oh, S.S.;Ha, H.S.;Yang, J.S.;Kim, T.H.;Lee, N.J.;Jeong, Y.H.;Ko, R.K.;Song, K.J.;Ha, D.W.;Youm, D.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.11a
    • /
    • pp.24-25
    • /
    • 2006
  • SmBCO coated conductors were successfully fabricated using EDDC (Evaporation using Drum in Dual Chambers) deposition system that is a bath type co-evaporation system for fabrication of superconducting tape and divided into two chambers named evaporation chamber and reaction chamber. To obtain long and high quality superconducting coated conductor, it is very important to secure the uniformity of all the deposition parameters m the deposition system such as deposition temperature, oxygen partial pressure, compositional ratios and so on. Therefore, we investigated the distribution of the parameters along the axis of the drum m EDDC on which tapes were wound helically. When the temperature on the middle point of deposition zone was $700^{\circ}C$, that on the edge of deposition zone was $675^{\circ}C$. When the thickness of SmBCO layer on the middle point of deposition zone was 1063 nm, that on the edge of deposition zone was 899 nm. The partial pressure of oxygen was 5 mTorr in the reaction chamber while that was $7{\times}10^{-5}$Torr in the evaporation chamber. The composition ratio of Sm:Ba:Cu, that was measured by EDX, was very uniform along the axis of the drum. Under these deposition conditions, critical current distribution along the drum axis was 175 A/cm, 190A/cm, 217.5 A/cm, 182.5 A/cm, 175 A/cm with the interval of 9 cm between samples. It means that the EDDC system has the potential of fabricating (100m, 200A) class coated conductor.

  • PDF

Novel Phenol Resin Carbonizing Method for Carbon Interlayer Coating between Reinforcing Fiber and Matrix in Fiber Reinforced Ceramic Composite (페놀수지 탄화 코팅법을 이용한 섬유강화 복합재료 계면 형성에 관한 연구)

  • Kim, Se-Young;Woo, Sang-Kuk;Han, In-Sub
    • Journal of the Korean Ceramic Society
    • /
    • v.46 no.3
    • /
    • pp.301-305
    • /
    • 2009
  • The novel carbon coating process for interlayer of fiber reinforced ceramic composites between fiber and matrix was performed by carbonizing phenolic resin solution that coated on fiber surface in $N_2$ atmosphere at $600^{\circ}C$ to improve the strength and fracture toughness of CMC(ceramic matrix composite). 160 nm carbon layer was coated on fiber surface with 5 vol% of phenolic resin solution. Since the process temperature ($600^{\circ}C$) is lower than chemical vapor deposition($900{\sim}1000^{\circ}C$), the strength and toughness could be preserved. Furthermore the coating thickness uniformity was improved to 8% of deviation along the stacking sequence. Therefore, prevention from fiber degradation during coating process and controlling coating thickness uniformity along the preform depth were achieved by coating with phenolic resin carbonizing method.

Analysis Trap and Device Characteristic of Silicon-Al2O3-Nitride-Oxide-Silicon Memory Cell Transistors using Charge Pumping Method (Charge Pumping Method를 이용한 Silicon-Al2O3-Nitride-Oxide-Silicon Flash Memory Cell Transistor의 트랩과 소자)

  • Park, Sung-Soo;Choi, Won-Ho;Han, In-Shik;Na, Min-Gi;Lee, Ga-Won
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.45 no.7
    • /
    • pp.37-43
    • /
    • 2008
  • In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program/erase (P/E) speed, reliability of memory device on interface trap between Si substrate and tunneling oxide and bulk trap in nitride layer were investigated using charge pumping method which has advantage of simple and versatile technique. We analyzed different SANOS memory devices that were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SANOS cell transistors with larger capture cross section and interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. The data retention was deteriorated as increasing P/E cycling number but not coincides with interface trap increasing tendency. This result once again confirmed that interface trap independence on data retention. And the result on different program method shows that HCI program method more degraded by locally trapping. So, we know as a result of experiment that analysis the SANOS Flash memory characteristic using charge pumping method reflect the device performance related to interface and bulk trap.

Non-Enzymatic Glucose Sensor Based on a Copper Oxide Nanoflowers Electrode Decorated with Pt Nanoparticles (백금 나노입자가 분산된 3차원 산화구리 나노구조체 기반의 글루코스 검출용 비효소적 전기화학 센서 개발)

  • Song, Min-Jung
    • Korean Chemical Engineering Research
    • /
    • v.56 no.5
    • /
    • pp.705-710
    • /
    • 2018
  • An electrochemical glucose sensor with enzyme-free was fabricated using Pt nanoparticles (Pt NPs) decorated CuO nanoflowers (CuO NFs). 3-D CuO nanoflowers film was directly synthesized on Cu foil by a simple hydrothermal method and Pt NPs were dispersed on the petal surface of CuO NFs through electrochemical deposition. This prepared sample was noted to Pt NPs-CuO NF. Morphology of the Pt NPs-CuO NFs layer was analyzed using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS). The electrochemical properties and sensing performances were investigated using cyclic voltammetry (CV) and chronoamperometry (CA) under alkaline condition. The sensor exhibited a high sensitivity, wide liner range and fast response time. Its excellent sensing performance was attributed to the synergistic effect of the Pt NPs and CuO nanostructure.

Synthesis and characterization of amorphous NiWO4 nanostructures

  • Nagaraju, Goli;Cha, Sung Min;Yu, Jae Su
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.392.1-392.1
    • /
    • 2016
  • Nowadays, research interest in developing the wearable devices are growing remarkably. Portable consumer electronic systems are becoming lightweight, flexible and even wearable. In fact, wearable electronics require energy storage device with thin, foldable, stretchable and conformable properties. Accordingly, developing the flexible energy storage devices with desirable abilities has become the main focus of research area. Among various energy storage devices, supercapacitors have been considered as an attractive next generation energy storage device owing to their advantageous properties of high power density, rapid charge-discharge rate, long-cycle life and high safety. The energy being stored in pseudocapacitors is relatively higher compared to the electrochemical double-layer capacitors, which is due to the continuous redox reactions generated in the electrode materials of pseudocapacitors. Generally, transition metal oxides/hydroxide (such as $Co_3O_4$, $Ni(OH)_2$, $NiFe_2O_4$, $MnO_2$, $CoWO_4$, $NiWO_4$, etc.) with controlled nanostructures (NSs) are used as electrode materials to improve energy storage properties in pseudocapacitors. Therefore, different growth methods have been used to synthesize these NSs. Of various growth methods, electrochemical deposition is considered to be a simple and low-cost method to facilely integrate the various NSs on conductive electrodes. Herein, we synthesized amorphous $NiWO_4$ NSs on cost-effective conductive textiles by a facile electrochemical deposition. The as-grown amorphous $NiWO_4$ NSs served as a flexible and efficient electrode for energy storage applications.

  • PDF

Comparison of Soft Magnetic Properties of Permalloy and Conetic Thin Films (퍼멀로이와 코네틱 박막의 연자성 특성 비교)

  • Choi, Jong-Gu;Hwang, Do-Guwn;Lee, Sang-Suk;Rhee, Jang-Roh
    • Journal of the Korean Magnetics Society
    • /
    • v.19 no.4
    • /
    • pp.142-146
    • /
    • 2009
  • The soft magnetic property for the Corning glass/Ta(5 nm)/[Conetic, Permalloy)/Ta(3 nm) prepared by the ion beam deposition sputtering was investigated. The coercivity and saturation magnetic field of conetic (NiFeCuMo) and permalloy (NiFe) layer with easy and hard direction along to the applying magnetic field during deposition was compared with each other. The surface resistance of conetic film with a thickness of 10 nm was 2 times lower than one of permalloy film. The coercivity and the magnetic susceptibility of conetic film decreased and increased 3 times to one of permalloy film, respectively. These results suggest that a highly sensitive GMR-SV or MTJ using conetic film can be possible to develop the bio-device.

Deposition of ZrO$_2$ and TiO$_2$ Thin Films Using RF Magnet ron Sputtering Method and Study on Their Structural Characteristics

  • Shin, Y.S.;Jeong, S.H.;Heo, C.H.;Bae, I.S.;Kwak, H.T.;Lee, S.B.;Boo, J.H.
    • Journal of the Korean institute of surface engineering
    • /
    • v.36 no.1
    • /
    • pp.14-21
    • /
    • 2003
  • Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

Deposition of Micropattern using The Laser Direct Writing Method with a polymer coating layer (폴리머 코팅층 레이저 직접묘화법을 이용한 미세패턴증착)

  • Lee, Bong-Gu
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.15 no.12
    • /
    • pp.6980-6985
    • /
    • 2014
  • A micro-conductive pattern was fabricated on an insulating substrate ($SiO_2$) surface using a laser direct writing method. In the LIFT process, when the laser beam irradiates a thin metal film, the photon energy is absorbed by the film and converted to thermal energy, and the thermal decomposition reaction produced by the resulting heat conduction forms a deposit on the substrate. The resistivity of the micro-electrodes deposited through LIFT process with and without polymer coating was measured. The results showed that the electric conductivity of the micro-pattern and micro-structure can be increased approximatly two times when the deposited micropattern is fabricated through a LIFT process with a polymer coating, compared to the case without a polymer coating.

Properties of Ni-SiC Composite Coating Layers Prepared by Electroplating Method (전해도금법으로 형성한 Ni-SiC 복합피막층의 특성)

  • Lee, Hong-Kee;Son, Seong-Ho;Lee, Ho-Young;Koo, Seok-Bon;Jeon, Jun-Mi
    • Journal of the Korean institute of surface engineering
    • /
    • v.39 no.4
    • /
    • pp.160-165
    • /
    • 2006
  • Ni-SiC composite coating layers were prepared by electroplating method and their deposition rate, codeposition of SiC, morphology, surface roughness, hardness, wear and friction properties were investigated. It was found that the deposition rate and the codeposition of SiC in the composite coating layer increased with increasing concentration of SiC in the solution only at the early stage. Both of them reached certain maxima and then decreased with increasing concentration of SiC. Rough surface was obtained with increasing codeposition of SiC, which is probably due to the agglomeration of the SiC particle in the vicinity of surface. Vickers hardness increased with increasing codeposition of SiC and heat treatment at $300^{\circ}C$ in air for 1 hour. Wear volume decreased with increasing codeposition of SiC and friction coefficient increased with increasing codeposition of SiC at the early stage, and it became almost constant. Such wear and friction behaviors are desirable for the practical application.

A Study on the Fabrication and Characteristic Analysis of Blue Organic Light Emitting Devices (청색 유기발광소자 제작 및 특성분석에 관한 연구)

  • 김중연;노병규;강명구;오환술
    • Journal of the Institute of Electronics Engineers of Korea TE
    • /
    • v.39 no.1
    • /
    • pp.9-15
    • /
    • 2002
  • In this thesis, blue emission organic light emitting devices were fabricated by using vacuum deposition method. Two types of device were employed to realize blue emission. Type I had an emitting layer containing TPB-doped $Alq_3$ and type II had an emitting layer containing DPA-doped $Alq_3$. The variable dopant concentration was 0.5 ~2 wt%. The electrical and optical characteristics of these devices have been investigated. The more dopant concentration increased, the nearer the blue coordinate. Type I than type II had a lower turn on voltage and driving voltage. The emission luminescence of type II was brighter than that of type I. When we applied 15V to type II with DPA(2wt%)-doped $Alq_3$, we have achived the emission luminescence of 1282cd/$m^2$, the emission wavelength of 476nm and the blue emission CIE coordination of (0.1273, 0.0672)