• 대한기계학회논문집B
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• 제24권11호
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• pp.1497-1505
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• 2000

A numerical study is made on the ice-formation for a laminar flow in a curved channel. When the water flows through the curved channel with the walls specified below the freezing temperature, the ice layer has been formed on the curved surface, different from that of a straight channel. The fluctuation of ice layer has been predicted, considering the variation of velocity and temperature near the curved portion of channel. The study also takes into account the interaction existing between the laminar flow and the curved channel. In the solution strategy, the present study is substantially different from the existing works in that the complete set of governing equations in both the solid and liquid regions are resolved. The results from this study have been mainly presented, focusing on the variation of ice layer close to the curved portion. Numerical results have been obtained parametrically by varying the curved angle and the radius of curvature of channel, in addition to the variation of Reynolds numbers and wall temperatures of channel. The results show that the curved shape of channel has the great effect on the thickness of the solidification layer. The wave of ice layer thickness appears in the vicinity of curved portion. This behavior of ice layer has been amplified as is the increasing of curved angle and the radius of curvature of channel. In addition, the ice layer becomes thin as Reynolds numbers in increasing. And also, as the wall temperature of channel increases, the width of channel becomes to be shrunk due to the growth of ice layers in the upper and lower wall of channel.

• 한국기계가공학회지
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• 제19권1호
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• pp.114-120
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• 2020

In this study, the process of freezing around two consecutively arranged channel tubes used for evaporator heat exchange was numerically investigated. Numerical results confirmed that the vortex occurred between the front channel and the rear channel and also that the vortex occurred due to the rapid change of the channel at the rear of the rear channel. These vortices were found to play a role in reducing the ice layer to some extent by the growth of the ice layer at the front and rear of the channel tube. The freezing layer showed a tendency to gradually increase as it passed through the channel pipe. As the wall temperature in the channel pipe decreased, the thickness of the freezing layer increased. As the flow rate of water slowed, the thickness of the freezing layer became thicker. In particular, in the case of a slow flow rate of 0.03 m/s, the freezing layers of the front channel pipe and the rear channel pipe were connected to each other. The narrower the channel, the thinner the freezing layer was in both the front and rear channel tubes. It is found that these thin freezing layers are caused by the low thickness of the temperature boundary layer formed around the channel tube.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.44-48
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• 2008

Hole mobility characteristics of two representative biaxially strained SiGe/Si structures with high Ge contents are studied, They are single channel ($Si/Si_{1-x}Ge_x/Si$ substrate) and dual channel ($Si/Si_{1-y}Ge_y/Si_{1-x}Ge_x/Si$ substrate), where the former consists of a relaxed SiGe buffer layer with 60 % Ge content and a tensile-strained Si layer on top, and for the latter, a compressively strained SiGe layer is inserted between two layers, Owing to the hole mobility performance between a relaxed SiGe film and a compressive-strained SiGe film in the single channel and the dual channel, the hole mobility behaviors of two structures with respect to the Si cap layer thickness shows the opposite trend, Hole mobility increases with thicker Si cap layer for single channel structure, whereas it decreases with thicker Si cap layer for dual channel. This hole mobility characteristics could be easily explained by a simple capacitance model.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제17권1호
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• pp.261-279
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• 2023

In this article, the uplink achievable rate is investigated for massive multiple-input multiple-output (MIMO) under correlated Ricean fading channel, where each base station (BS) and user are both deployed multiple antennas. Considering the availability of prior knowledge at BS, two different channel estimation approaches are adopted with and without prior knowledge. Based on these channel estimations, a two-layer decoding scheme is adopted with maximum ratio precoding as the first layer decoder and optimal second layer precoding in the second layer. Based on two aforementioned channel estimations and two-layer decoding scheme, the exact closed form expressions for uplink achievable rates are computed with and without prior knowledge, respectively. These derived expressions enable us to analyze the impacts of line-of-sight (LoS) component, two-layer decoding, data transmit power, pilot contamination, and spatially correlated Ricean fading. Then, numerical results illustrate that the system with spatially correlated Ricean fading channel is superior in terms of uplink achievable rate. Besides, it reveals that compared with the single-layer decoding, the two-layer decoding scheme can significantly improve the uplink achievable rate performance.

• 전자공학회논문지C
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• 제34C권7호
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• pp.9-17
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• 1997

This paper proposes a routing model based on the HVHD for four-layer routing problems. Differing from the HVHV and HVHH models, the proposed HVHD model permits diagonal routing on the fourth laye rwith a grid of 45.deg., 90.deg. and 135.deg. directions. The developed algorithm which uses a channel-graph including weights routes a layer using diagonal model and the othe rthree layers using HVH model. Applications to several benchmark examples verify that approximately 10~25 percent reduction of channel density can be achieved compared to the conventional four-layer channel routing algorithms.

• 한국인터넷방송통신학회논문지
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• 제8권3호
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• pp.57-70
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• 2008

This paper introduces a new paradigm of physical layer security through channel coding for wireless networks. The well known spread spectrum based physical layer security in wireless network is applicable when code division multiple access (CDMA) is used as wireless air link interface. In our proposal, we incorporate the proposed security protocol within channel coding as channel coding is an essential part of all kind of wireless communications. Channel coding has a built-in security in the sense of encoding and decoding algorithm. Decoding of a particular codeword is possible only when the encoding procedure is exactly known. This point is the key of our proposed security protocol. The common parameter that required for both encoder and decoder is generally a generator matrix. We proposed a random selection of generators according to a security key to ensure the secrecy of the networks against unauthorized access. Therefore, the conventional channel coding technique is used as a security controller of the network along with its error correcting purpose.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권3호
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• pp.240-250
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• 2010

Double Gate MOSFETs (DG MOSFETs) with doping in one or two thin layers of an otherwise intrinsic channel are simulated to obtain the transport characteristics, threshold voltage and leakage current. Two different device structures- one with doping on two layers near the top and bottom oxide layers and another with doping on a single layer at the centre- are simulated and the variation of device parameters with a change in doping concentration and doping layer thickness is studied. It is observed that an n-doped layer in the channel reduces the threshold voltage and increases the drive current, when compared with a device of undoped channel. The reduction in the threshold voltage and increase in the drain current are found to increase with the thickness and the level of doping of the layer. The leakage current is larger than that of an undoped channel, but less than that of a uniformly doped channel. For a channel with p-doped layer, the threshold voltage increases with the level of doping and the thickness of the layer, accompanied with a reduction in drain current. The devices with doped middle layers and doped gate layers show almost identical behavior, apart from the slight difference in the drive current. The doping level and the thickness of the layers can be used as a tool to adjust the threshold voltage of the device indicating the possibility of easy fabrication of ICs having FETs of different threshold voltages, and the rest of the channel, being intrinsic having high mobility, serves to maintain high drive current in comparison with a fully doped channel.

• 한국콘텐츠학회논문지
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• 제8권1호
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• pp.272-281
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• 2008

3D 영상에 이펙트를 표현할 수 있는 레이어 채널을 삽입함으로써 애플리케이션 렌더링에 효과적으로 이용하도록 한다. 현재의 이펙트 렌더링은 영상과 이펙트의 개별 처리 및 혼합의 방식을 사용하기 때문에 저장 공간과 영상 처리에 있어서 개별 소스를 필요로 하고 있다. 그러나 영상과 레이어 채널을 하나로 묶어 처리함으로써 비용 절약과 영상 처리 면에서 큰 효과를 볼 수 있다. 개발은 영상에 레이어 채널을 삽입하기 위해서 영상 포맷의 변경, 레이어 채널이 나타나지 않도록 숨김 기능 추가, 영상 로드시 영상과 레이어 채널을 동시 접근 가능하도록 제어, 영상과 레이어 채널이 쉽게 혼합될 수 있도록 간편한 알파 블렌딩 처리 등의 방법으로 영상 포맷을 변경하여 레이어 채널을 숨기는 기법, 일반 영상 뷰어에서도 변경된 포맷의 영상을 볼 수 있도록 개발, 레이어 채널과 영상을 같이 묶음으로써 재사용성을 높이고 모든 프로그램에 이용 가능하도록 만든다. 그러면 영상 로드시에 영상과 레이어 채널을 동시에 불러드림으로써 처리 속도 향상시키고 3D 영상에 레이어 채널을 삽입함으로써 레이어 채널 영상을 위한 소스 저장 공간을 줄일 수 있다. 또한 3D 영상과 레이어 채널의 영상을 한 번에 다룰 수 있게 되어 효과적인 이펙트 표현 가능하고 실제 애플리케이션이 될 수 있는 멀티미디어 영상 등에 효과적으로 이용이 가능할 수 있을 것으로 기대한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.211.2-211.2
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• 2015

In order to investigate the effect of front channel in DAL (dual active layer) TFT (thin film transistor), we successfully fabricated DAL TFT composed of ITZO and IGZO as active layer using the solution process. In this structure, ITZO and IGZO active layer were used as front and back channel, respectively. The front channel was changed from 0.05 to 0.2 M at fixed 0.3 M IGZO of back channel. When the mol concentration of front channel was increased, the threshold voltage (VTH) was increased from 2.0 to -11.9 V and off current also was increased from 10-12 to 10-11. This phenomenon is due to increasing the carrier concentration by increasing the volume of the front channel. The saturation mobility of DAL TFT with 0.05, 0.1, and 0.2 M ITZO were 0.45, 4.3, and $0.65cm2/V{\cdot}s$. Even though 0.2 M ITZO has higher carrier concentration than 0.05 and 0.1 M ITZO, the 0.1 M ITZO/0.3 M IGZO DAL TFT has the highest saturation mobility. This is due to channel defect such as pores and pin-holes. These defect sites were created during deposition process by solvent evaporation. Due to these defect sites, the 0.1 M ITZO/0.3 M IGZO DAL TFT shows the higher saturation mobility than that of DAL TFT with front channel of 0.2 M ITZO.

• 대한전자공학회논문지TE
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• 제42권1호
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• pp.1-6
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• 2005

채널 배선은 VLSI 설계 과정중의 하나로, 글로벌 배선을 수행한 후 각 배선 영역에 할당된 네트들을 트랙에 할당하여 구체적인 네트들의 위치를 결정하는 문제이며, 네트들이 할당된 트랙의 수를 최소화하는 문제이다. 본 논문에서는 4-레이어 채널 배선 문제에 대하여 유전자 알고리즘(genetic algorithm; GA)을 이용한 해 공간 탐색(solution space search) 방식을 제안하였으며, 제안한 방식을 기존의 4-레이어 채널 배선 알고리즘과 비교, 분석하였다.