Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2015.08a
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- Pages.211.2-211.2
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- 2015
Electrical Characteristics of Solution Processed DAL TFT with Various Mol concentration of Front channel
- Kim, Hyunki (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
- Choi, Byoungdeog (Department of Electrical and Computer Engineering, Sungkyunkwan University)
- Published : 2015.08.24
Abstract
In order to investigate the effect of front channel in DAL (dual active layer) TFT (thin film transistor), we successfully fabricated DAL TFT composed of ITZO and IGZO as active layer using the solution process. In this structure, ITZO and IGZO active layer were used as front and back channel, respectively. The front channel was changed from 0.05 to 0.2 M at fixed 0.3 M IGZO of back channel. When the mol concentration of front channel was increased, the threshold voltage (VTH) was increased from 2.0 to -11.9 V and off current also was increased from 10-12 to 10-11. This phenomenon is due to increasing the carrier concentration by increasing the volume of the front channel. The saturation mobility of DAL TFT with 0.05, 0.1, and 0.2 M ITZO were 0.45, 4.3, and