• Title/Summary/Keyword: Layer Channel

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Effects of the Curvature on the Freezing Phenomena of a Laminar Water Flow in a Curved Channel (곡유로내 물의 층류유동에서 곡부가 결빙에 미치는 영향)

  • Seo, Jeong-Se
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.24 no.11
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    • pp.1497-1505
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    • 2000
  • A numerical study is made on the ice-formation for a laminar flow in a curved channel. When the water flows through the curved channel with the walls specified below the freezing temperature, the ice layer has been formed on the curved surface, different from that of a straight channel. The fluctuation of ice layer has been predicted, considering the variation of velocity and temperature near the curved portion of channel. The study also takes into account the interaction existing between the laminar flow and the curved channel. In the solution strategy, the present study is substantially different from the existing works in that the complete set of governing equations in both the solid and liquid regions are resolved. The results from this study have been mainly presented, focusing on the variation of ice layer close to the curved portion. Numerical results have been obtained parametrically by varying the curved angle and the radius of curvature of channel, in addition to the variation of Reynolds numbers and wall temperatures of channel. The results show that the curved shape of channel has the great effect on the thickness of the solidification layer. The wave of ice layer thickness appears in the vicinity of curved portion. This behavior of ice layer has been amplified as is the increasing of curved angle and the radius of curvature of channel. In addition, the ice layer becomes thin as Reynolds numbers in increasing. And also, as the wall temperature of channel increases, the width of channel becomes to be shrunk due to the growth of ice layers in the upper and lower wall of channel.

Numerical Analysis of Freezing Phenomena of Water around the Channel Tube of MF Evaporator (MF증발기 채널관 주위의 결빙현상에 대한 해석적 연구)

  • Park, Yong-Seok;Seong, Hong-Seok;Suh, Jeong-Se
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.19 no.1
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    • pp.114-120
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    • 2020
  • In this study, the process of freezing around two consecutively arranged channel tubes used for evaporator heat exchange was numerically investigated. Numerical results confirmed that the vortex occurred between the front channel and the rear channel and also that the vortex occurred due to the rapid change of the channel at the rear of the rear channel. These vortices were found to play a role in reducing the ice layer to some extent by the growth of the ice layer at the front and rear of the channel tube. The freezing layer showed a tendency to gradually increase as it passed through the channel pipe. As the wall temperature in the channel pipe decreased, the thickness of the freezing layer increased. As the flow rate of water slowed, the thickness of the freezing layer became thicker. In particular, in the case of a slow flow rate of 0.03 m/s, the freezing layers of the front channel pipe and the rear channel pipe were connected to each other. The narrower the channel, the thinner the freezing layer was in both the front and rear channel tubes. It is found that these thin freezing layers are caused by the low thickness of the temperature boundary layer formed around the channel tube.

Hole Mobility Characteristics of Biaxially Strained SiGe/Si Channel Structure with High Ge Content (고농도의 Ge 함량을 가진 Biaxially Strained SiGe/Si Channel Structure의 정공 이동도 특성)

  • Jung, Jong-Wan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.1
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    • pp.44-48
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    • 2008
  • Hole mobility characteristics of two representative biaxially strained SiGe/Si structures with high Ge contents are studied, They are single channel ($Si/Si_{1-x}Ge_x/Si$ substrate) and dual channel ($Si/Si_{1-y}Ge_y/Si_{1-x}Ge_x/Si$ substrate), where the former consists of a relaxed SiGe buffer layer with 60 % Ge content and a tensile-strained Si layer on top, and for the latter, a compressively strained SiGe layer is inserted between two layers, Owing to the hole mobility performance between a relaxed SiGe film and a compressive-strained SiGe film in the single channel and the dual channel, the hole mobility behaviors of two structures with respect to the Si cap layer thickness shows the opposite trend, Hole mobility increases with thicker Si cap layer for single channel structure, whereas it decreases with thicker Si cap layer for dual channel. This hole mobility characteristics could be easily explained by a simple capacitance model.

Uplink Achievable Rate analysis of Massive MIMO Systems in Transmit-correlated Ricean Fading Environments

  • Yixin, Xu;Fulai, Liu;Zixuan, Zhang;Zhenxing, Sun
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.17 no.1
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    • pp.261-279
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    • 2023
  • In this article, the uplink achievable rate is investigated for massive multiple-input multiple-output (MIMO) under correlated Ricean fading channel, where each base station (BS) and user are both deployed multiple antennas. Considering the availability of prior knowledge at BS, two different channel estimation approaches are adopted with and without prior knowledge. Based on these channel estimations, a two-layer decoding scheme is adopted with maximum ratio precoding as the first layer decoder and optimal second layer precoding in the second layer. Based on two aforementioned channel estimations and two-layer decoding scheme, the exact closed form expressions for uplink achievable rates are computed with and without prior knowledge, respectively. These derived expressions enable us to analyze the impacts of line-of-sight (LoS) component, two-layer decoding, data transmit power, pilot contamination, and spatially correlated Ricean fading. Then, numerical results illustrate that the system with spatially correlated Ricean fading channel is superior in terms of uplink achievable rate. Besides, it reveals that compared with the single-layer decoding, the two-layer decoding scheme can significantly improve the uplink achievable rate performance.

A new four-layer channel router using the diagonal routing (대각선배선을 사용한 4층 채널배선에 관한 연구)

  • 이병호
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.7
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    • pp.9-17
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    • 1997
  • This paper proposes a routing model based on the HVHD for four-layer routing problems. Differing from the HVHV and HVHH models, the proposed HVHD model permits diagonal routing on the fourth laye rwith a grid of 45.deg., 90.deg. and 135.deg. directions. The developed algorithm which uses a channel-graph including weights routes a layer using diagonal model and the othe rthree layers using HVH model. Applications to several benchmark examples verify that approximately 10~25 percent reduction of channel density can be achieved compared to the conventional four-layer channel routing algorithms.

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Channel Coding Based Physical Layer Security for Wireless Networks (채널 부호화를 통한 물리계층 무선네트워크 보안기술)

  • Asaduzzaman, Asaduzzaman;Kong, Hyung Yun
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.8 no.3
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    • pp.57-70
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    • 2008
  • This paper introduces a new paradigm of physical layer security through channel coding for wireless networks. The well known spread spectrum based physical layer security in wireless network is applicable when code division multiple access (CDMA) is used as wireless air link interface. In our proposal, we incorporate the proposed security protocol within channel coding as channel coding is an essential part of all kind of wireless communications. Channel coding has a built-in security in the sense of encoding and decoding algorithm. Decoding of a particular codeword is possible only when the encoding procedure is exactly known. This point is the key of our proposed security protocol. The common parameter that required for both encoder and decoder is generally a generator matrix. We proposed a random selection of generators according to a security key to ensure the secrecy of the networks against unauthorized access. Therefore, the conventional channel coding technique is used as a security controller of the network along with its error correcting purpose.

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Threshold Voltage Control through Layer Doping of Double Gate MOSFETs

  • Joseph, Saji;George, James T.;Mathew, Vincent
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.3
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    • pp.240-250
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    • 2010
  • Double Gate MOSFETs (DG MOSFETs) with doping in one or two thin layers of an otherwise intrinsic channel are simulated to obtain the transport characteristics, threshold voltage and leakage current. Two different device structures- one with doping on two layers near the top and bottom oxide layers and another with doping on a single layer at the centre- are simulated and the variation of device parameters with a change in doping concentration and doping layer thickness is studied. It is observed that an n-doped layer in the channel reduces the threshold voltage and increases the drive current, when compared with a device of undoped channel. The reduction in the threshold voltage and increase in the drain current are found to increase with the thickness and the level of doping of the layer. The leakage current is larger than that of an undoped channel, but less than that of a uniformly doped channel. For a channel with p-doped layer, the threshold voltage increases with the level of doping and the thickness of the layer, accompanied with a reduction in drain current. The devices with doped middle layers and doped gate layers show almost identical behavior, apart from the slight difference in the drive current. The doping level and the thickness of the layers can be used as a tool to adjust the threshold voltage of the device indicating the possibility of easy fabrication of ICs having FETs of different threshold voltages, and the rest of the channel, being intrinsic having high mobility, serves to maintain high drive current in comparison with a fully doped channel.

Processing Techniques of Layer Channel Image for 3D Image Effects (3D 영상 효과를 위한 레이어 채널 이미지의 처리 기법)

  • Choi, Hak-Hyun;Kim, Jung-Hee;Lee, Myung-Hak
    • The Journal of the Korea Contents Association
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    • v.8 no.1
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    • pp.272-281
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    • 2008
  • A layer channel, which can express effects on 3D image, is inserted to use it on application rendering effectively. The current method of effect rendering requires individual sources in storage and image processing, because it uses individual and mixed management of images and effects. However, we can save costs and improve results in images processing by processing both image and layer channels together. By changing image format to insert a layer channel in image and adding a hide function to conceal the layer channel and control to make it possible to approach image and layer channels simultaneously during loading image and techniques hiding the layer channel by changing image format with simple techniques, like alpha blending, etc., it is developed to improve reusability and be able to be used in all programs by combining the layer channel and image together, so that images in changed format can be viewed in general image viewers. With the configuration, we can improve processing speed by introducing image and layer channels simultaneously during loading images, and reduce the size of source storage space for layer channel images by inserting a layer channel in 3D images. Also, it allows managing images in 3D image and layer channels simultaneously, enabling effective expressions, and we can expect to use it effectively in multimedia image used in practical applications.

Electrical Characteristics of Solution Processed DAL TFT with Various Mol concentration of Front channel

  • Kim, Hyunki;Choi, Byoungdeog
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.211.2-211.2
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    • 2015
  • In order to investigate the effect of front channel in DAL (dual active layer) TFT (thin film transistor), we successfully fabricated DAL TFT composed of ITZO and IGZO as active layer using the solution process. In this structure, ITZO and IGZO active layer were used as front and back channel, respectively. The front channel was changed from 0.05 to 0.2 M at fixed 0.3 M IGZO of back channel. When the mol concentration of front channel was increased, the threshold voltage (VTH) was increased from 2.0 to -11.9 V and off current also was increased from 10-12 to 10-11. This phenomenon is due to increasing the carrier concentration by increasing the volume of the front channel. The saturation mobility of DAL TFT with 0.05, 0.1, and 0.2 M ITZO were 0.45, 4.3, and $0.65cm2/V{\cdot}s$. Even though 0.2 M ITZO has higher carrier concentration than 0.05 and 0.1 M ITZO, the 0.1 M ITZO/0.3 M IGZO DAL TFT has the highest saturation mobility. This is due to channel defect such as pores and pin-holes. These defect sites were created during deposition process by solvent evaporation. Due to these defect sites, the 0.1 M ITZO/0.3 M IGZO DAL TFT shows the higher saturation mobility than that of DAL TFT with front channel of 0.2 M ITZO.

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A Genetic Algorithm for 4-layer Channel Routing (4-레이어 채널 배선 유전자 알고리즘)

  • Kim, Hyun-Gi;Song, Ho-Jeong;Lee, Beom-Geun
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.42 no.1
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    • pp.1-6
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    • 2005
  • Channel routing is a problem assigning each net to a track after global routing and minimizing the track that assigned each net. In this paper we propose a genetic algorithm searching solution space for 4-layer channel routing problem. We compare the performance of proposed genetic algorithm(GA) for channel routing with that of other 4-layer channel routing algorithm by analyzing the results of each implementation.