• 대한토목학회논문집
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• 제30권4A호
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• pp.353-359
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• 2010

시멘트계 기질을 사용하는 복합재료는 재료 양생 과정에서 발생하는 건조수축 균열에 취약하다. 본 연구에서는 파이버 보강 콘크리트의 건조수축에 의한 파괴 거동을 시뮬레이션 하고, 파이버의 조건이 균열 특성에 미치는 영향에 대해 분석한다. 수치 해석 모델은 무작위 격자 형태의 기하학적 구조를 공유하는 관로 요소와 rigid-body-spring 요소로 구성되는데, 각 요소가 담당하는 비역학적-역학적 거동의 커플링에 의해 건조수축이 표현된다. 파이버 보강을 모델링하기 위해 rigid-bodyspring network 내부의 semi-discrete 파이버 요소를 적용하였다. KS F 2424 자유 건조수축 실험을 해석하고 시간에 따른 건조수축 변형률 변화를 비교함으로써 재료의 건조수축 관련 계수들을 산정한다. 다음으로 여러 파이버 혼입률에 대해 KS F 2595 구속 건조수축 실험을 시뮬레이션 하고 균열 발생 일자를 선행 실험 결과와 비교하여 해석 모델의 타당성을 검증한다. 또한, 파이버의 길이와 표면 형태를 변화시켜 건조수축 균열 해석을 수행하고 최대 균열 폭을 측정하여 시뮬레이션에서 나타나는 균열 제어 효과를 판단한다.

• 한국결정학회지
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• 제3권2호
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• pp.120-128
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• 1992

BaTiO3 단결정을 용액의 서냉속도를 달리하면서 TSSG법으로 육성하였으며, 성장된 단결정의 결정외형, 결정 결함, 분역구조 등을 관찰하였다. 0.5℃/hr이 하의 속도로 서 냉함으로써 비교적 등차원적인 큰 단 결정을 육성할 수 있었으며, 성장된 BaTiO3 단결정 은 |111|면이 가장 잘 발달된 외형을 나타내었다. 용 액 냉각속도가 너무 빠르거나 용액내의 수직 온도구 배가 너무 크면 용액이 불안정해지므로, 침상의 Ba6 TiL7040 결정상이 석출된다. 성장된 결정내에 평행 한 쐐기모양의 lamella 분역 집단이 이와 수직하게 진행하는 lamella 분역 집단과 불규칙한 경계를 이루 고 있으며, 이들은 x-ray topography에서 현저한 회 절 명암 차이를 나타낸다. 단결정을 127℃ 이상으로 가열하면 입 방정으로 상전이 된다. 상전이 전단이 이 동할 때 정방정 영역에서는 연속적 분역 재배열이 이루어 지고 입방정 영역에서는 규칙적인 음력변형이 나타나며, BaTiO의 PTF정벽면은 |110|에 대해 약 9°기울어진 면으로 이루어진다.

• 한국재료학회지
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• 제28권10호
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• pp.539-543
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• 2018

We report the structural, morphological and magnetic properties of the $Ni_{70}Mn_{30}$ alloy prepared by Planetary Ball Mill method. Keeping the milling time constant for 30 h, the effect of different ball milling speeds on the synthesis and magnetic properties of the samples was thoroughly investigated. A remarkable variation in the morphology and average particle size was observed with the increase in milling speed. For the samples ball milled at 200 and 300 rpm, the average particle size and hence magnetization were decreased due to the increased lattice strain, distortion and surface effects which became prominent due to the increase in the thickness of the outer magnetically dead layer. For the samples ball milled at 400, 500 and 600 rpm however, the average particle size and hence magnetization were increased. This increased magnetization was attributed to the reduced surface area to volume ratio that ultimately led to the enhanced ferromagnetic interactions. The maximum saturation magnetization (75 emu/g at 1 T applied field) observed for the sample ball milled at 600 rpm and the low value of coercivity makes this material useful as soft magnetic material.

• 한국분말재료학회지
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• 제27권2호
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• pp.146-153
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• 2020

The co-doping effect of aliovalent metal ions such as Mg²⁺, Ca²⁺, Sr²⁺, Ba²⁺, and Zn²⁺ on the photoluminescence of the Y₂O₃:Eu³⁺ red phosphor, prepared by spray pyrolysis, is analyzed. Mg²⁺ metal doping is found to be helpful for enhancing the luminescence of Y₂O₃:Eu³⁺. When comparing the luminescence intensity at the optimum doping level of each Mg²⁺ ion, the emission enhancement shows the order of Zn²⁺ ≈ Ba²⁺ > Ca²⁺ > Sr³⁺ > Mg²⁺. The highest emission occurs when doping approximately 1.3% Zn²⁺, which is approximately 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺. The highest emission was about 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺ when doping about 1.3% Zn²⁺. It is determined that the reason (Y, M)₂O₃:Eu³⁺ has improved luminescence compared to that of Y₂O₃:Eu³⁺ is because the crystallinity of the matrix is improved and the non-luminous defects are reduced, even though local lattice strain is formed by the doping of aliovalent metal. Further improvement of the luminescence is achieved while reducing the particle size by using Li₂CO₃ as a flux with organic additives.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.989-995
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• 2000

G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ is a very promising material for the high-speed device due to the fact that electron and hole mobilities for the strained G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ are greatly enhanced. Because G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ has a direct band gap for the proper combination of x and y, it can be applied to the optoelectronic device. Therefore, the study of the electrical property for G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$(001) with a direct energy gap is needed. G $e_{1-x}$ S $n_{x}$ layer can not be grown thickly due to the large difference of lattice constants. This fact prefers the structure of the device where electrons and holes move in the plane direction. The transverse mobilities of electron and hole for G $e_{0.8}$S $n_{0.2}$Ge(001) are 2~3 times larger than those for Ge/Ge/ sub0.8/S $n_{0.2}$(001). Therefore, G $e_{0.8}$S $n_{0.2}$Ge(001) is expected to be better than Ge/G $e_{0.8}$S $n_{0.2}$(001) for the development of the high-speed device.h-speed device.device.h-speed device. device.

• 한국재료학회지
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• 제8권7호
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• pp.591-595
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• 1998

이 연구에서는 HVPE법으로 두께가 350$\mu\textrm{m}$, 면적이 100$\textrm{mm}^2$인 크랙이 없는 freestanding GaN 단결정 기판을 제작하고, 그 특성을 조사하였다. 제작된 GaN 기판의 격자상수는 $c_{o}$ =5.18486$\AA$이었고, 이중 X-선 회절피크의 반치폭은 650 arcsec 이었다. 10K의 온도에서 측정한 PL 스펙트럼은 에너지 밴드 갭 부근에서 중성 도너와 중성 억셉터에 구속된 여기자 및 자유여기자의 소멸에 의한 발광과 결정 결함고 관계하는 깊은 준위에 의한 1.8eV 부근 발광으로 구성되었다. 또한 라만 E2(high)모드 주파수는 567cm-1로서 벌크 GaN 단결정의 값과 같았다. 한편, GaN 기판의 전기저항도형은 n형이었고, 전기 비저항은 0.02$\Omega$.cm이었으며, 캐리어 이동도와 농도는 각각 283$\textrm{cm}^2$/V.s와 1.1$\times$$10^{18}$$cm^{-3}$이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.414-414
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• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• Journal of Magnetics
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• 제20권3호
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• pp.229-240
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• 2015

In this study, nanocrystalline ferrite powders with the composition $Ni_{0.5}Zn_{0.5}Fe_2O_4$ were prepared by the autocombustion method. The obtained powders were sintered at $800^{\circ}C$, $900^{\circ}C$ and $1,000^{\circ}C$ for 4 h in air atmosphere. The as-prepared and the sintered powders were characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, and magnetization studies. An increase in the crystallite size and a slight decrease in the lattice constant with sintering temperature were observed, whereas microstrain was observed to be negative for all the samples. Two significant absorption bands in the wave number range of the $400cm^{-1}$ to $600cm^{-1}$ have been observed in the FT-IR spectra for all samples which is the distinctive feature of the spinel ferrites. The force constants were found to vary with sintering temperature, suggesting a cation redistribution and modification in the unit cell of the spinel. The M-H loops indicate smaller coercivity, which is the typical nature of the soft ferrites. The observed variation in the saturation magnetization and coercivity with sintering temperature has been attributed to the role of surface, inhomogeneous cation distribution, and increase in the crystallite size.

• Progress in Superconductivity
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• 제10권1호
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• pp.23-28
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• 2008

We report refinement of crystalline boron by an attrition ball milling system and the superconducting properties of the $MgB_2$ pellets prepared from the refined boron. In this work, we have conducted the ball milling with only crystalline boron powder, in order to improve homogeneity and control the grain size of the $MgB_2$ that is formed from it. We observed that the crystalline responses in the ball-milled boron became broader and weaker when the ball-milling time was further increased. On the other hand, the $B_{2}O_{3}$ peak became stronger in the powders, resulting in an increase in the amount of MgO within the $MgB_2$ volume. The main reason for this is a greater oxygen uptake. From the perspective of the superconducting properties, however, the sample prepared from boron that was ball milled for 5 hours showed an improvement of critical current density ($J_c$), even with increased MgO phase, under an external magnetic field at 5 and 20 K.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.59-59
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• 2011

We will report atomically sharp epitaxial growth of $Bi_2Se_3$ three-dimensional topological insulator films on Si(111) substrate with molecular beam epitaxy (MBE). It was achieved by employing two step growth temperatures to prevent any formation of second phase, like as $SiSe_2$ clusters, between $Bi_2Se_3$ and Si substrate at the early stage of growth. The growth rate was determined completely by Bi flux and the Bi:Se flux ratio was kept ~1:15. The second-phase-free atomically sharp interface was verified by RHEED, TEM and XRD. Based on the RHEED analysis, the lattice constant of $Bi_2Se_3$ relaxed to its bulk value during the first quintuple layer implying the absence of strain from the substrate. Single-crystalline XRD peaks of $Bi_2Se_3$ were observed in films as thin as 4 QL. TEM shows full epitaxial structure of $Bi_2Se_3$ film down to the first quintuple layer without any second phases. This growth method was used to grow high quality epitaxial $Bi_2Se_3$ films from 3 QL to 3600 QL. The magneto-transport properties of these thin films show a robust 2D surface state which is thickness independent.